ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon-based luminescent materials have been investigated widely for use in advanced optoelectronic integrated circuits and display devices. We tested the application of such materials and investigated their basic characteristics. In this study, luminescent silicon was produced by photochemical etching. The polarization of the photoluminescence under a right and left circularly polarized laser (Ar+ laser, 488 nm) irradiation was observed at 20–290 K. We found that the right- and left-circularly polarized photoluminescence intensities were intensified under right- and left-circular excitation, respectively. Information on the circular polarization of the laser excitation is apparently preserved in silicon-based luminescent material. This tendency was observed at room temperature. Additionally, a luminescence mechanism is studied by the spin dynamics of the photon-electron interaction. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1434544
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