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  • 1
    Electronic Resource
    Electronic Resource
    Photoelastic waveguides and the controlled introduction of strain in III-V semiconductors by means of thin film technology (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 236-244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of thin film technology to introduce controllable and thermally stable stress into semiconductor heterostructures. Two simple schemes are used. The first scheme is to use interfacial reactions between a metal and the substrate, such as Ni, Co, Pd, and Pt on GaAs/AlGaAs. The induced stress in the structure is reproducible and controllable because the volumetric change for a given reaction is fixed, as long as the deposited film is fully reacted to form a compound. The stability of the stress depends on the stability of the compound. In the case of Ni and Co on GaAs/AlGaAs, the induced stress is thermally stable up to 600 °C. Evaporated films and reacted films are usually under tension. The second scheme is to use rf sputtered W or WNi alloy films where W or WNi is sputtered onto a negative dc biased substrate. This scheme effectively provides highly compressed films. The thermal stability depends on the concentration of Ni in the WNi alloy. Using the two schemes above, we have fabricated low-loss (∼1 dB/cm at 1.52 μm wavelength) photoelastic waveguides in GaAs/AlGaAs heterostructures, and explored the interrelationship between the photoelastic waveguide characteristics and the stress. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360657
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  • 2
    Electronic Resource
    Electronic Resource
    Planar 1.3 and 1.55 μm InGaAs(P)/InP electroabsorption waveguide modulators using oxygen ion mixing and the photoelastic effect (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4352-4361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient 1.3 and 1.55 μm InP-based electroabsorption waveguide modulators with planar device structures have been demonstrated. Elevated temperature oxygen ion implantation and/or the photoelastic effect induced by W metal stressor stripes deposited on the semiconductor surface have been used to produce these self-aligned planar guided-wave devices. The oxygen ion mixing process has been used to simultaneously achieve compositional disordering and electrical isolation of superlattice material while the photoelastic effect has been used to improve the lateral mode confinement. A 1.3 μm Franz–Keldysh modulator with a (approximately-greater-than)10 dB extinction ratio at 2 V and a 1.55 μm device with a (approximately-greater-than)10 dB extinction ratio at 7 V are reported. These single growth step planar processing techniques have also been used to fabricate relatively low-loss (〈4 dB/cm) double heterostructure InGaAs(P)/InP single-mode optical waveguides which demonstrate their usefulness in developing InP-based photonic integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355978
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  • 3
    Electronic Resource
    Electronic Resource
    Light-activated silicon diode switches (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 930-933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study of the fundamental limits to current density, power, and speed of light-activated semiconductor switches (LASS) is described. The LASS investigated are high-voltage silicon junction devices illuminated with 1.06-μm laser light. A novel optical delay line is designed in sampling the laser pulses. Experimental results to date demonstrated a switch power of 6.7 MW, a peak electrical pulse power of 4.8 kW, a current density of 150 kA/cm2, a power density of 5.3 GW/cm3, and an electrical pulse rise time of 100 ps. The results of theoretical analysis indicate that the circuit configuration is the main limitation to the pulse rise time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340035
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  • 4
    Electronic Resource
    Electronic Resource
    Ion mixing of III-V compound semiconductor layered structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2602-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions (∼1015/cm2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351079
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  • 5
    Electronic Resource
    Electronic Resource
    Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1306-1311 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of simultaneous compositional disordering and the formation of electrical resistive layers induced by oxygen implantation in InGaAs/InP superlattices has been investigated. The disordering characteristics have been studied as a function of implantation temperature and ion dose. It was found that implantation at elevated temperatures (referred to as the IM or ion mixing process) usually leads to much more efficient disordering compared to implantation at room temperature followed by annealing at the same elevated temperature (referred to as the implantation plus annealing process). Of particular interest is the observation that ion mixing at 550 °C with 1×1013 O+/cm2 leads to significantly more disordering than implantation with the same dose at room temperature followed by annealing at 550 °C for the same period of ion mixing time. In addition, the electrical resistance of the ion-mixed layer at 550 °C increases 2600 times for the p-type InGaAs/InP superlattice structure, whereas the sample implanted at room temperature and annealed at 550 °C showed only a 20 times increase in electrical resistance. These results indicate a distinct advantage for the IM process in achieving simultaneous compositional disordering and electrical isolation for optoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351737
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  • 6
    Electronic Resource
    Electronic Resource
    Compositional disordering by solid phase regrowth (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 625-627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The principle of solid phase regrowth (SPR)has been used to induce compositional disordering in AlGaAs/GaAs superlattice structures in the temperature range of 400 °C (30 min)–650 °C (30 s) as compared to the conventional diffusion method in the temperature range of 600–850 °C for hours. The SPR process is simple to implement, requiring only thin-film deposition and annealing. The crystal quality as well as the photoluminescence signals emerging from the disordered region generally improve with increasing processing temperature. The simplicity, the low process temperature, and the short process duration of the SPR technique are distinct advantages for optoelectronic applications, especially for self-aligned devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104549
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  • 7
    Electronic Resource
    Electronic Resource
    Semiconductor waveguide phase comparator (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1297-1298 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase comparator based on two cascaded semiconductor electroabsorption waveguide modulators is demonstrated for the first time. The operation principle of this device is derived and experimentally confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100002
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  • 8
    Electronic Resource
    Electronic Resource
    Planar semiconductor lasers using the photoelastic effect (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7442-7447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar separate-confinement, double-heterostructure, single-quantum-well photoelastic GaAs/AlGaAs lasers have been fabricated using a novel yet practical processing technique involving thin-film surface WNi stressors for waveguiding and ion implantation for isolation. A p++-GaAs contact layer regrown by chemical beam epitaxy has been used to improve the WNi ohmic contacts to the lasers. Even without bonding on heat sinks, these planar photoelastic lasers operate at continuous wave at room temperature. The lowest threshold is 29 mA for a cavity length of 178 μm and a stressor width of 5 μm. The internal quantum efficiency above threshold is 75%. The characteristic temperature is 114 K. The main waveguiding mechanism of the photoelastic lasers is determined to be weak index guiding with the beam waist in the junction plane measured 10 μm behind the end facet. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367988
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  • 9
    Electronic Resource
    Electronic Resource
    Chirping of electroabsorption modulation in InGaAsP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1100-1102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oscillatory behaviors in the electroabsorption (EA) spectra around the fundamental edge of InGaAsP are measured for the first time. Chirping of EA modulation is obtained from these EA spectra and the corresponding electrorefraction spectra calculated from the Kramers–Kronig transform. This result is applied to the selection of material band gap for applications of laser light modulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101669
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  • 10
    Electronic Resource
    Electronic Resource
    Hemispherical resonator study for surface-emitting InGaAsP/InP lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 432-433 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For making surface-emitting lasers such as InGaAsP/InP double-heterostructure lasers, it is important to select and study the resonator properly. The authors have compared the relative light output power of two different structures, the plane-parallel and the hemispherical resonators. The InGaAsP/InP double-heterostructure was grown by liquid phase epitaxy. The different resonators on the same wafer were fabricated using chemical etching, lithography, evaporation, and other integrated circuit process techniques. Output optical power of the devices with the hemispherical resonator is a factor of 2 larger than those with the plane-parallel resonator. This is because the hemispherical resonator structure has a smaller diffraction loss than the plane-parallel structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102756
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