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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence from Mg-doped In0.5Ga0.5P grown by liquid-phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2309-2312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of photoluminescence from the Mg-doped In0.5Ga0.5P layers on (100) GaAs substrates grown by liquid-phase epitaxy has been studied. At low temperature, the spectra show only two major emission peaks involving intrinsic recombination and conduction–band-to-acceptor transition. The intrinsic recombination dominates in the doping concentration range studied (1.0×1017–7.0×1018 cm−3) above 60 K. Below 50 K, these two peaks merged with each other when the doping concentration is higher than 1×1018 cm−3. The temperature dependence of band gap in In0.5Ga0.5P layers determined from the photoluminescence peak energy varies as 1.976 − [7.5 ×10−4 T2/(T + 500)] eV. For the moderately doped concentration (p 〈 1.4 × 1018 cm−3), the Mg acceptor ionization energy obtained from 50-K photoluminescent spectra is in the range from 37 to 40 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349425
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  • 2
    Electronic Resource
    Electronic Resource
    Quantization effect on capacitance-voltage and current-voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4286-4289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger–Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346222
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  • 3
    Electronic Resource
    Electronic Resource
    On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3451-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers-Brillouin approximation combined with the k⋅p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48±0.10 eV above the valence band edge of the AlSb) agrees with the valence-band offset (0.40±0.15 eV) between the AlSb and the GaSb obtained by x-ray photoemission measurement reported by Gualtieri et al. [Appl. Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm2 (with a peak-to-valley ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346355
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  • 4
    Electronic Resource
    Electronic Resource
    InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3040-3043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. In this structure, a large tunneling current can be obtained by taking the advantage of the large heterojunction-conduction band to valence band overlap (0.15 eV) between InAs and GaSb which offers flexible designs of the AlSb barrier thickness and the doping concentrations. We have obtained a negative differential resistance with a peak-to-valley current ratio as high as 4.7 and a peak current density of 3.5 kA/cm2 at room temperature with a 1.5-nm-thick AlSb barrier. The current transport mechanism in this tunneling structure will be discussed according to the I-V characteristics as a function of temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346396
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  • 5
    Electronic Resource
    Electronic Resource
    Very low threshold single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2610-2612 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in preparing 1.5 μm wavelength strained-layer graded-index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) injection lasers by chemical beam epitaxy (CBE). These lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long-wavelength InGaAs/InGaAsP quantum well injection lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold-temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104838
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  • 6
    Electronic Resource
    Electronic Resource
    Transform-limited 1.4 ps optical pulses from a monolithic colliding-pulse mode-locked quantum well laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 759-761 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the generation of short optical pulses from novel monolithic colliding-pulse mode-locked quantum well lasers. Transform-limited pulses with durations of 1.4 ps at a repetition rate of 32.6 GHz have been achieved, with nearly 100% intensity modulation depth and a peak optical power of 10 mW. This is the shortest transform-limited pulse directly generated from monolithic mode-locked lasers (time-bandwidth product =0.3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103413
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  • 7
    Electronic Resource
    Electronic Resource
    Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2065-2067 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the first successful preparation of InGaAs/InGaAsP multiple quantum well (MQW) lasers grown by chemical beam epitaxy. The broad-area threshold current densities of standard (not graded index) separate confinement heterostructure (SCH) MQW lasers were as low as 860 and ∼590 A/cm2 for cavity lengths of 500 and 1500–3500 μm. Such values are similar to those obtained from MQW wafers employing the more advanced graded index SCH(GRIN-SCH) grown by metalorganic vapor phase epitaxy. Buried-heterostructure lasers also have similar threshold currents, i.e., 25–40 mA for 300–1500 long cavities. Pulsed and cw output power at 1.57 μm as high as 216 and 140 mW were obtained from 1-mm-long buried-heterostructure lasers having antireflection and high reflection coatings of ∼5% and ∼85%. The layer thickness uniformity is better than ±1% across a 2-in.-diam wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103942
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  • 8
    Electronic Resource
    Electronic Resource
    Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1253-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast subpicosecond optical pulse generation is achieved by passive colliding-pulse mode locking of monolithic multiple quantum well InGaAsP semiconductor lasers. Transform-limited optical pulses with durations of 1.1, 0.83, 1.0, and 0.64 ps are achieved at repetition rates of 40, 80, 160, and 350 GHz, respectively, without using any external ac sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104327
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  • 9
    Electronic Resource
    Electronic Resource
    Surface-emitting second-harmonic generator for waveguide study (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 422-424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel surface emission of coherently generated second-harmonic wave is reported for the first time.The technique is used for the observation of the difference in propagation constant of the TE0 and TM0 mode of GaAs/AlGaAs waveguide cavity to a high degree of accuracy. In this technique the second-harmonic signal propagates out from the top surface of the waveguide structure, converting the modal phase difference between TE0 and TM0 modes into intensity variation along the waveguide length. The second-harmonic signal is easily observable by the naked eye, and the technique does not require wavelength tuning or mechanical movement for the measurement of birefringence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99430
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  • 10
    Electronic Resource
    Electronic Resource
    Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high-quality GaAs on (100) Si substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1386-1388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Type-I dislocations at the GaAs/Si interface are beneficial because they effectively relax the mismatched stress, but do not propagate into the GaAs film. Accordingly, the best way to grow a low defect density GaAs film on a Si substrate is to form as many as possible type-I dislocations or, equivalently, to suppress other kinds of defects. The high-resolution transmission electron microscopy study shows that most of the type-I dislocations are formed at the double step on a Si surface. It is further determined that the silicon surface steps are mainly due to the substrate tilting instead of the heating before growth. Based on our study, the (100) Si substrate with double steps along both [110] and [11¯0] axes provides the best condition for growing low defect density GaAs on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99124
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