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  • 1
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    In:  Blumea - Biodiversity, Evolution and Biogeography of Plants (0006-5196) vol.54 (2009) nr.1/3 p.175
    Publication Date: 2015-03-06
    Description: Phylogenetic analyses of Microstegium (Andropogoneae, Poaceae) and some other Andropogoneae species were conducted inferred from the ITS/5.8S sequences. As a result of this study, Microstegium is polyphyletic. There are two rather distant monophyletic clades, one with Microstegium nudum (type of Leptatherum), M. japonicum and M. somae, the other one with M. ciliatum, M. fauriei, M. geniculatum and M. vimineum (type of Microstegium). Therefore we feel justified to reinstate the genus Leptatherum and three new combinations, Leptatherum boreale, L. nudum and L. somae, are proposed.
    Keywords: Andropogoneae ; ITS ; Leptatherum ; Microstegium ; phylogeny ; Poaceae ; taxonomy
    Repository Name: National Museum of Natural History, Netherlands
    Type: Article / Letter to the editor
    Format: application/pdf
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  • 2
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    In:  Blumea - Biodiversity, Evolution and Biogeography of Plants (0006-5196) vol.54 (2009) nr.1/3 p.220
    Publication Date: 2015-03-06
    Description: Ceriops zippeliana, a member of the mangrove Rhizophoraceae, was first reported in 1849. It was considered to be a synonym of C. decandra, which is still widely accepted. We present morphological and molecular evidence to show that C. zippeliana is significantly distinct from C. decandra, and illustrations and an identification key to both species.
    Keywords: Ceriops decandra ; Ceriops zippeliana ; lectotypification ; Malesia ; mangrove ; Rhizophoraceae ; trnL intron
    Repository Name: National Museum of Natural History, Netherlands
    Type: Article / Letter to the editor
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  • 3
    Publication Date: 2024-01-12
    Description: Ceriops zippeliana, a member of the mangrove Rhizophoraceae, was first reported in 1849. It was considered to be a synonym of C. decandra, which is still widely accepted. We present morphological and molecular evidence to show that C. zippeliana is significantly distinct from C. decandra, and illustrations and an identification key to both species.
    Keywords: Ceriops decandra ; Ceriops zippeliana ; lectotypification ; Malesia ; mangrove ; Rhizophoraceae ; trnL intron
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
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  • 4
    Publication Date: 2024-01-12
    Description: Phylogenetic analyses of Microstegium (Andropogoneae, Poaceae) and some other Andropogoneae species were conducted inferred from the ITS/5.8S sequences. As a result of this study, Microstegium is polyphyletic.\nThere are two rather distant monophyletic clades, one with Microstegium nudum (type of Leptatherum), M. japonicum and M. somae, the other one with M. ciliatum, M. fauriei, M. geniculatum and M. vimineum (type of Microstegium).\nTherefore we feel justified to reinstate the genus Leptatherum and three new combinations, Leptatherum boreale, L. nudum and L. somae, are proposed.
    Keywords: Andropogoneae ; ITS ; Leptatherum ; Microstegium ; phylogeny ; Poaceae ; taxonomy
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6646-6652 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The 4 3Σ+g, 3 3Πg, and 2 3Δg states of K2 have been studied by perturbation facilitated optical–optical double resonance spectroscopy for the first time. Molecular constants of those states are derived and compared with theoretical calculations. Varying the trial vibrational quantum numbers of these upper states, absolute vibrational quantum number assignments are obtained by comparison between the observed resolved fluorescence intensities and the calculated Franck–Condon factors. The Rydberg–Klein–Rees potential curves are constructed and compared with theoretical calculations. Finally, the observation of the lowest "dark'' vibrational levels of the b 3Πu state by resolved fluorescence from the 2 3Δg state confirmed the absolute vibrational numbering of this state and allowed refinement of the b 3Πu molecular constants. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 699-701 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Estimates of the effective deposition probability for plasma-deposited amorphous silicon (a-Si:H) films were obtained from computer simulations using a Monte Carlo technique. Randomized scattering events are tracked to simulate the deposition of a-Si:H along etched trenches under a metallic shadow mask. The resulting film thickness profiles are consistent with scanning electron micrographs obtained from step coverage experiments. Device quality materials tend to have effective deposition probabilities lower than 0.01 and are associated with CVD-like deposition involving SiH3 radicals. Defective materials are found to have deposition probabilities near unity and are associated with a PVD-like process involving SiH and SiH2 radicals.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4694-4696 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnTe quantum dots embedded in ZnS were grown successfully by controlling the flow duration in a metalorganic chemical vapor deposition system. Blueshift as large as 250 meV was observed in photoluminescence measurement, and the emission persists up to room temperature. The amount of blueshift decreases with increasing quantum dot size and for large quantum dots, no photoluminescence could be detected. From studying the temperature-dependent integrated intensity of the emission spectra, it is found that the activation energy for the quenching of photoluminescence increases with decreasing quantum dot size, and is identified as the binding energy of exciton in ZnTe quantum dot. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 569-592 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a detailed study of structural and electronic properties of hydrogenated amorphous silicon-germanium alloys deposited by rf glow discharge from SiH4 and GeH4 in a diode reactor. The chemical composition of the alloys is related to the deposition conditions, with special emphasis on preferential incorporation of Ge into the solid phase and on the role of inert dilutant gases. Hydrogen bonding in the alloys is investigated with nuclear magnetic resonance and vibrational (Raman and infrared) spectroscopy. The optical properties of a-SiGe:H samples deposited under optimal conditions are analyzed with the help of subgap absorption measurements and band-tail luminescence for the entire range of alloy composi-tions. A large part of the article describes an investigation of the electron-spin-resonance response of undoped alloys. The spin density associated with dangling bond defects localized on Si and Ge atoms has been measured as a function of alloy composition for optimized material. In addition, the dependence of the two defect densities on the detailed deposition conditions (rf power, substrate temperature, and dilution) has been determined in a systematic way for alloys deposited from a plasma with a fixed SiH4/GeH4ratio. The results of this study, especially the preferential creation of Ge dangling bonds, are discussed in the context of our structural data. Furthermore, spin resonance is employed to investigate the light-induced degradation (Staebler–Wronski effect) of a-SiGe:H. Finally, the changes of the spin-resonance spectra of a-Si0.7 Ge0.3 :H upon substitutional doping with phosphorus and boron have been obtained experimentally, and are used to construct a model for the electronic density of states in this material.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2947-2954 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The film thickness, chemical state, and polarization screening for a-SiN1.4 :H films deposited by glow discharge over hydrogenated amorphous silicon (a-Si:H) were determined by x-ray photoelectron spectroscopy (XPS) and Auger spectroscopy. The nitride films were observed to be single phase and the escape depth for 1400-eV electrons in the a-SiN1.4 :H film was determined to be 30 A(ring). The band offsets for the a-Si:H/a-SiN1.4 :H interface were determined by XPS and Bremsstrahlung isochromat spectroscopy (BIS) to be 1.2 eV for the valence band and 2.2 eV for the conduction band, while the band gap for a-SiN1.4 :H was found to be 5.3 eV in accordance with the optical gap. By combining optical absorption measurements with the valence-band density of states and conduction-band density of states determined by electron spectroscopy, a semiquantitative estimate of the band tailing within the nitride gap was obtained. Correlation of the defect absorption with the electron spin resonance measurements suggest that the dangling bond defect level in a-SiN1.4 :H lies approximately 2.5 eV from the nitride valence band and is, therefore, somewhat below the a-Si:H conduction band. This study has demonstrated that BIS is an effective technique for determining the conduction-band offsets in heterostructures without relying on valence-band offset or band-gap measurements.
    Type of Medium: Electronic Resource
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