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  • 1
    Publication Date: 2007
    Description: We report the draft genome sequence of the model moss Physcomitrella patens and compare its features with those of flowering plants, from which it is separated by more than 400 million years, and unicellular aquatic algae. This comparison reveals genomic changes concomitant with the evolutionary movement to land, including a general increase in gene family complexity; loss of genes associated with aquatic environments (e.g., flagellar arms); acquisition of genes for tolerating terrestrial stresses (e.g., variation in temperature and water availability); and the development of the auxin and abscisic acid signaling pathways for coordinating multicellular growth and dehydration response. The Physcomitrella genome provides a resource for phylogenetic inferences about gene function and for experimental analysis of plant processes through this plant's unique facility for reverse genetics.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Rensing, Stefan A -- Lang, Daniel -- Zimmer, Andreas D -- Terry, Astrid -- Salamov, Asaf -- Shapiro, Harris -- Nishiyama, Tomoaki -- Perroud, Pierre-Francois -- Lindquist, Erika A -- Kamisugi, Yasuko -- Tanahashi, Takako -- Sakakibara, Keiko -- Fujita, Tomomichi -- Oishi, Kazuko -- Shin-I, Tadasu -- Kuroki, Yoko -- Toyoda, Atsushi -- Suzuki, Yutaka -- Hashimoto, Shin-Ichi -- Yamaguchi, Kazuo -- Sugano, Sumio -- Kohara, Yuji -- Fujiyama, Asao -- Anterola, Aldwin -- Aoki, Setsuyuki -- Ashton, Neil -- Barbazuk, W Brad -- Barker, Elizabeth -- Bennetzen, Jeffrey L -- Blankenship, Robert -- Cho, Sung Hyun -- Dutcher, Susan K -- Estelle, Mark -- Fawcett, Jeffrey A -- Gundlach, Heidrun -- Hanada, Kousuke -- Heyl, Alexander -- Hicks, Karen A -- Hughes, Jon -- Lohr, Martin -- Mayer, Klaus -- Melkozernov, Alexander -- Murata, Takashi -- Nelson, David R -- Pils, Birgit -- Prigge, Michael -- Reiss, Bernd -- Renner, Tanya -- Rombauts, Stephane -- Rushton, Paul J -- Sanderfoot, Anton -- Schween, Gabriele -- Shiu, Shin-Han -- Stueber, Kurt -- Theodoulou, Frederica L -- Tu, Hank -- Van de Peer, Yves -- Verrier, Paul J -- Waters, Elizabeth -- Wood, Andrew -- Yang, Lixing -- Cove, David -- Cuming, Andrew C -- Hasebe, Mitsuyasu -- Lucas, Susan -- Mishler, Brent D -- Reski, Ralf -- Grigoriev, Igor V -- Quatrano, Ralph S -- Boore, Jeffrey L -- BBS/E/C/00004948/Biotechnology and Biological Sciences Research Council/United Kingdom -- New York, N.Y. -- Science. 2008 Jan 4;319(5859):64-9. Epub 2007 Dec 13.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Plant Biotechnology, Faculty of Biology, University of Freiburg, Schaenzlestrasse 1, D-79104 Freiburg, Germany.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/18079367" target="_blank"〉PubMed〈/a〉
    Keywords: Adaptation, Physiological ; Angiosperms/genetics/physiology ; Animals ; Arabidopsis/genetics/physiology ; *Biological Evolution ; Bryopsida/*genetics/physiology ; Chlamydomonas reinhardtii/genetics/physiology ; Computational Biology ; DNA Repair ; Dehydration ; Gene Duplication ; Genes, Plant ; *Genome, Plant ; Metabolic Networks and Pathways/genetics ; Multigene Family ; Oryza/genetics/physiology ; Phylogeny ; Plant Proteins/genetics/physiology ; Repetitive Sequences, Nucleic Acid ; Retroelements ; Sequence Analysis, DNA ; Signal Transduction/genetics
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 2
    Publication Date: 2005-04-12
    Description: The plant-specific transcription factor LEAFY controls general aspects of the life cycle in a basal plant, the moss Physcomitrella patens. In contrast, LEAFY has more specialized functions in angiosperms, where it specifically induces floral fate during the reproductive phase. This raises the question of a concomitant change in the biochemical function of LEAFY during the evolution of land plants. We report that the DNA binding domain of LEAFY, although largely conserved, has diverged in activity. On the contrary, other, more rapidly evolving portions of the protein have few effects on LEAFY activity.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Maizel, Alexis -- Busch, Maximilian A -- Tanahashi, Takako -- Perkovic, Josip -- Kato, Masahiro -- Hasebe, Mitsuyasu -- Weigel, Detlef -- New York, N.Y. -- Science. 2005 Apr 8;308(5719):260-3.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Molecular Biology, Max Planck Institute for Developmental Biology, D-72076 Tubingen, Germany.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/15821093" target="_blank"〉PubMed〈/a〉
    Keywords: Amino Acid Sequence ; Binding Sites ; DNA, Plant/metabolism ; *Evolution, Molecular ; Flowers/*growth & development ; Phylogeny ; Plant Proteins/*genetics/metabolism ; Plants/genetics ; Transcription Factors/*genetics/metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4946-4949 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied nonradiative recombination centers in undoped (AlxGa1−x)0.5In0.5Pgrown by metalorganic vapor phase epitaxy using transient capacitance spectroscopy. We found three deep energy levels, including a mid-gap level. We drew an equation to get a capture cross section for minority carriers, and obtained it using isothermal capacitance transient spectroscopy measurement. The mid-gap level had an electron capture cross section of 2 × 10−10 cm2 and a hole capture cross section of 1 × 10−15 cm2. The time constant of nonradiative recombination through the mid-gap level was found to be comparable to that of radiative recombination. We concluded that the mid-gap level is an effective nonradiative recombination center that reduces photoluminescence intensity.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2169-2172 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper discusses the impact ionization rates of holes in AlxGa1−xSb near x=0.06, where resonance impact ionization is expected. Resonance impact ionization did not occur in a range of the electric field we studied. We evaluate the impact ionization of holes at the spin-split-off band theoretically, and show that our measured result is reasonable.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2766-2766 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1359-1361 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the lasing mechanism of an InGaN/GaN/AlGaN multiquantum well (MQW) laser diode on SiC grown by low-pressure metalorganic vapor phase epitaxy. Surface emission and edge emission are compared by optical pumping on the laser chip for which electrical pumping was made. Excitation power dependence of photoluminescence (PL) and PL mapping are also taken on the same chip. From the results, we demonstrate that lasing phenomena in our laser are dominated by free carriers and that the observed various stimulated emission lines are caused by the inhomogeneity of the InGaN MQW. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 987-989 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculated band structures of (11¯00)-oriented GaN with various strains. We found that introducing anisotropic strain in the c plane separates heavy- and light-hole bands. We also found that a tensile strain in the (11¯00) plane makes the light-hole band topmost. These two effects result in a reduction in the density of states at the valence-band edge. In this way we can significantly reduce the transparent carrier density to generate gain. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 249-251 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured impact ionization rates in AlxGa1−xSb at x=0.06, where the band-gap energy Eg equals the spin-orbital splitting energy Δ, in an electric field of 1.5×105–3.2×105 V/cm. By considering exact field profile in the depletion layer for each sample, the ionization rates of AlxGa1−xSb have been determined to be α=2.35×106 exp(−1.30×106/E) and β=9.02×105 exp(−9.03×105/E). Although our data have not shown the resonant enhancement of hole ionization rates described by O. Hildebrand, W. Kuebart, and M. Pilkuhn [Appl. Phys. Lett. 37, 801 (1980)], exact values of impact ionization rates have been established in practical electric fields required for designing AlxGa1−xSb avalanche photodiodes.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 239-240 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped GaSb crystals with mirror-like surfaces were obtained by liquid phase epitaxy from Sb-rich solutions. The background carrier concentration strongly depended on the growth temperature. By growing crystals below 600 °C, we can obtain a GaSb crystal with a background carrier concentration under 1016 cm−3. Photoluminescence studies showed that native defects related to Sb vacancies were significantly reduced in the GaSb crystal.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 574-576 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi-insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
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