ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Measurement of the impact ionization rates in Al0.06Ga0.94Sb (1990)

Kuwatsuka, H. ; Mikawa, T. ; Miura, S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 249-251

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We measured impact ionization rates in AlxGa1−xSb at x=0.06, where the band-gap energy Eg equals the spin-orbital splitting energy Δ, in an electric field of 1.5×105–3.2×105 V/cm. By considering exact field profile in the depletion layer for each sample, the ionization rates of AlxGa1−xSb have been determined to be α=2.35×106 exp(−1.30×106/E) and β=9.02×105 exp(−9.03×105/E). Although our data have not shown the resonant enhancement of hole ionization rates described by O. Hildebrand, W. Kuebart, and M. Pilkuhn [Appl. Phys. Lett. 37, 801 (1980)], exact values of impact ionization rates have been established in practical electric fields required for designing AlxGa1−xSb avalanche photodiodes.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103705

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit