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  • 1
    Publication Date: 2021-11-03
    Description: Soil respiration (i.e. from soils and roots) provides one of the largest global fluxes of carbon dioxide (CO2) to the atmosphere and is likely to increase with warming, yet the magnitude of soil respiration from rapidly thawing Arctic-boreal regions is not well understood. To address this knowledge gap, we first compiled a new CO2 flux database for permafrost-affected tundra and boreal ecosystems in Alaska and Northwest Canada. We then used the CO2 database, multi-sensor satellite imagery, and random forest models to assess the regional magnitude of soil respiration. The flux database includes a new Soil Respiration Station network of chamber-based fluxes, and fluxes from eddy covariance towers. Our site-level data, spanning September 2016 to August 2017, revealed that the largest soil respiration emissions occurred during the summer (June–August) and that summer fluxes were higher in boreal sites (1.87 ± 0.67 g CO2–C m−2 d−1) relative to tundra (0.94 ± 0.4 g CO2–C m−2 d−1). We also observed considerable emissions (boreal: 0.24 ± 0.2 g CO2–C m−2 d−1; tundra: 0.18 ± 0.16 g CO2–C m−2 d−1) from soils during the winter (November–March) despite frozen surface conditions. Our model estimates indicated an annual region-wide loss from soil respiration of 591 ± 120 Tg CO2–C during the 2016–2017 period. Summer months contributed to 58% of the regional soil respiration, winter months contributed to 15%, and the shoulder months contributed to 27%. In total, soil respiration offset 54% of annual gross primary productivity (GPP) across the study domain. We also found that in tundra environments, transitional tundra/boreal ecotones, and in landscapes recently affected by fire, soil respiration often exceeded GPP, resulting in a net annual source of CO2 to the atmosphere. As this region continues to warm, soil respiration may increasingly offset GPP, further amplifying global climate change.
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3822-3828 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident positron energy for SiO2 (166 nm)/Si specimens fabricated by thermal oxidation. From the measurements, it was found that about 90% of positrons implanted into the SiO2 film annihilate from positronium (Ps) states. This fact was due to the trapping of positrons by open-space defects and a resultant enhanced formation of Ps in such regions. For the SiO2 film grown at 650 °C, the lifetime of ortho-Ps was found to be shorter than that in the film grown at 1000 °C. This result suggests that the volume of open-space defects in the SiO2 film decreased with decreasing the growth rate of the SiO2 film.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1704-1706 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positronium annihilation was applied to characterize the nanoporous structure of thin silicon oxide films sputter-deposited at different argon pressures ranging from 0.1 to 2.0 Pa. At higher argon pressures, the 3γ decay probability of ortho-positronium (o-Ps) was substantially enhanced. A comparison of this result with that obtained for capped samples indicated that: (a) 3γ annihilation is due to the intrinsic decay of o-Ps diffusing out from the film into vacuum and (b) films deposited at high argon pressures contain highly connected, open pores. Positron lifetime spectroscopy measurements on the capped films showed that the characteristic size of the pores can be as large as 2.6 nm, depending on the argon pressure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The system of single bunch injection (SBI) for the storage ring NIJI-IV was completed. The system was used for the injection of the short pulse beams from an electron gun into only one of the 16 rf buckets in the ring. On a compact storage ring, the multipulse beams in one pulse train can be stored into only one of many bunches by one injection. The optimum number of the grid pulse in one pulse train was determined to improve the storage efficiency and the storage current by one injection. The keeping time of the bump orbit was calculated by using the transfer matrices. The optimum pulse number obtained by the calculation is 2. In the SBI system, the number of grid pulses in one pulse train can be selected by the gate circuit. A snap off diode and a clip line are used to generate 2 ns grid pulses. The measured grid pulse was shorter than the longitudinal space 5.5 ns of the rf bucket with voltage of −80 V. The EIMAC Y-646B cathode-grid assembly is used as the electron source. It is expected that the injection system provides a higher peak current and easier free electron laser use operation in comparison with the rf-knockout system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The 10-T wiggler is an iron-cored superconducting wiggler destined for Electrotechnical Laboratory's 800-MeV electron storage ring to enhance the available radiation. The design and manufacturing contract for this magnet was started in April 1990 and was preceded by a feasibility study. The major features of the magnet are described in the article. Also, the effect of the superconducting wiggler with high magnetic field on the stored electron beam has been simulated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1967-1971 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effect of the growth-induced anisotropy field HKG has been investigated for the anomalous increase of the effective anisotropy field change Δ(Hk−4πMs) caused by annealing in heavily ion-implanted magnetic bubble garnets. In heavily implanted garnets, Δ(Hk−4πMs) increases with decreasing strain during annealing and does not follow the same curve that is obtained during implantation. The maximum difference in Δ(Hk−4πMs) between annealed and as-implanted samples corresponds to the value of Δ(Hk−4πMs) when the strain is reduced to zero by annealing. The anomalous increase is small in HKG-suppressed samples and is not observed in garnet films (YIG) without HKG. It is considered that the anomalous increase is due to suppression of the growth-induced anisotropy by heavy implantation. However, in the case of H+2 implantation the increase of Δ(Hk−4πMs) during the annealing process cannot be explained by the HKG suppression effect.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 404-410 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We deposited polymer-like a-C:H films using the plasma-enhanced chemical vapor deposition technique and characterized film microstructure by variable-energy positron lifetime spectroscopy, photoluminescence (PL), and UV-visible absorption spectroscopy. It was confirmed that PL occurs from a chromophore in a sp2 cluster as a result of fast recombination of a photoexcited electron-hole pair. Positron annihilation lifetime spectroscopy showed that positronium (Ps) formation takes place via electron-positron recombination in the sp3 matrix. The lifetime of ortho-positronium (o-Ps) in our a-C:H films was similar to that in polyethylene, indicating their polymer-like nature. The relative PL efficiency increased by about an order of magnitude with increasing film band gap from 1.3 to 3.4 eV, which can be related to the decreasing concentration of nonradiative centers. On the other hand, Ps formation was much less influenced by the band gap and nonradiative centers. Comparison of this result with that for polyethylene mixed with carbon-black nanoparticles, where a considerable reduction in Ps formation was observed, showed that nonradiative centers were of a different nature from the defects on the carbon nanoparticle surface. This work demonstrated the usefulness of positron lifetime spectroscopy combined with optical measurements to study the nanostructure of a-C:H. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7251-7256 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5767-5767 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bloch line (BL) propagation with a field-access scheme is necessary for the memory with low power consumption and high storage density. Previously we reported the field-access propagation using Co-Pt bit patterns.1 In these propagation patterns, (a) the drive field margins depend on the BL propagating direction to the magnetized direction of Co-Pt patterns and (b) the operating bias field margins are different at each corner of the stripe domain. The purpose of this paper is to solve these two problems. A new propagation method has been investigated using film thickness modulation patterns.2 The materials used here were magnetic bubble garnet films with composition of (YSmLuCa)3(FeGe)5O12. Fundamental characteristics of the samples are as follows: saturation induction 4πMs 200 G, anisotropy field Hk 1700 Oe, stripe width w and thickness h 5 μm. The thickness modulation patterns with an amplitude of about 1000 A were fabricated with the ion milling method. The stripe domains were stabilized around the 100% etched grooves, and aligned with 18 μm period. BL pair was propagated in the all part of the stripe domain walls at 500 kHz frequency, applying the triangular bias pulsed field with 50 ns rise time and 1000 ns fall time. As the result of the experiments, it has been found that the drive field margins are independent of BL propagation direction and the difference in the operating bias field margins at the each corner of the stripe domain becomes smaller. The BL propagation around the stripe domain was achieved with 5% bias field margin at the drive field of 8.5 Oe.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 216-222 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron beams were utilized to study SiO2 films grown on Si substrates. Annihilation characteristics of positrons in the SiO2 films were found to be dominated by the formation probability of positronium (Ps). For the SiO2 film grown by wet oxidation, a high formation probability of Ps was found by measurements of Doppler broadening profiles of the annihilation radiation and those of lifetime spectra. For SiO2 films grown by an atmospheric-pressure chemical vapor deposition technique using tetraethylorthosilicate and ozone, however, the formation probability of Ps drastically decreased. The inhibition of the Ps formation was attributed to interactions between positrons and –OH bonds.
    Type of Medium: Electronic Resource
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