Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 7251-7256
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355015
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