ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Bloch line (BL) propagation with a field-access scheme is necessary for the memory with low power consumption and high storage density. Previously we reported the field-access propagation using Co-Pt bit patterns.1 In these propagation patterns, (a) the drive field margins depend on the BL propagating direction to the magnetized direction of Co-Pt patterns and (b) the operating bias field margins are different at each corner of the stripe domain. The purpose of this paper is to solve these two problems. A new propagation method has been investigated using film thickness modulation patterns.2 The materials used here were magnetic bubble garnet films with composition of (YSmLuCa)3(FeGe)5O12. Fundamental characteristics of the samples are as follows: saturation induction 4πMs 200 G, anisotropy field Hk 1700 Oe, stripe width w and thickness h 5 μm. The thickness modulation patterns with an amplitude of about 1000 A were fabricated with the ion milling method. The stripe domains were stabilized around the 100% etched grooves, and aligned with 18 μm period. BL pair was propagated in the all part of the stripe domain walls at 500 kHz frequency, applying the triangular bias pulsed field with 50 ns rise time and 1000 ns fall time. As the result of the experiments, it has been found that the drive field margins are independent of BL propagation direction and the difference in the operating bias field margins at the each corner of the stripe domain becomes smaller. The BL propagation around the stripe domain was achieved with 5% bias field margin at the drive field of 8.5 Oe.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347869
