ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Growth of a natural buffer layer has been observed for DyBa2Cu3O7−x films grown on Si substrates. The best DyBa2Cu3O7−x film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-A(ring) thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of the DyBa2Cu3O7−x film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-A(ring) amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 A(ring) of chemical interdiffusion.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350189
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