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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1288-1290 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh-vacuum system has been constructed and outfitted with molecular beam sources and surface analysis equipment [Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED)]. The sample insertion system is a low-temperature apparatus. With this equipment, films can be grown in the 10−11–10−9-Torr range with substrate temperatures at 4.2–20 K. A modification of the system will permit growth at elevated temperatures followed by in situ low-temperature measurements. The design of the low-temperature apparatus permits extensive measurements to be taken in an environment in which the temperature can be controlled over a range from 0.3 to 300 K and the magnetic field from 10−7 to 6 T.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2872-2874 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a simple, improved apparatus for calibrating strain gauges down to liquid helium temperatures to permit an estimate of the repeatability and linearity of commercially available, batch produced, metal foil strain gauges. The apparatus is based upon an original design first proposed by McClintock [R. M. McClintock, Rev. Sci. Instrum. 30, 715 (1959)]. Calibrations performed on a particular batch produced metal foil strain gauge indicate that it behaved ideally at low temperatures. Although the gauge resistance was strongly temperature dependent, the gauge factor was virtually independent of temperature and did not display any detectable nonlinearity or hysteresis. © 1999 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3769-3774 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple, inexpensive apparatus for the production of pure ozone vapor for use in the in situ growth of superconducting oxide thin films is described. Pure condensed ozone is distilled at 77 K from a dilute mixture of ozone in oxygen gas. The condensed ozone is subsequently heated, raising its vapor pressure to provide an adequate flow of ozone gas into the thin film growth chamber. Thin films of YBa2 Cu3 O7−x with zero resistance at temperatures as high as 85 K have been grown with a deposition chamber pressure of only 2×10−7 Torr and without a post-deposition anneal processing step. Unlike most other commonly used forms of highly reactive oxygen, ozone can be made and stored in very pure form. This makes it very useful when a well-characterized oxidizing gas is needed for systematic studies of the growth kinetics and oxidation of the films. Safety aspects of the ozone-production process are discussed.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of thin (〈100 nm) La–M–Mn–O(M=Ca,Ba,Sr) films by ozone assisted, block-by-block, molecular beam epitaxy on single crystal SrTiO3, and LaAlO3, substrates. The films were characterized by RHEED, high resolution x-ray diffraction, x-ray reflectively, RBS, Ion channeling, SEM, and STM. These films show a very high degree of crystalline perfection as evidenced by very low rocking curve widths (〈0.06 deg), extremely low surface roughness (of the order of one unit cell) and the observation of thickness fringes using x-ray diffraction. Careful magnetic, transport and magnetotransport measurements of these films will be presented. Multilayer structures of La–M–Mn–O and Dy–Ba–Cu–O/La–Sr–Cu–O superconductors have also been fabricated. The effect of interfacial chemistry on the transport properties of such layers and the compatibility issues for the growth of manganate/cuprate superconductor multilayers will be discussed. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 844-846 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The voltage bias, temperature, and magnetic field dependence of the differential conductance of the interface between a half-metallic ferromagnet and a high-Tc superconductor have been studied in DyBa2Cu3O7/La2/3Ba1/3MnO3 heterostructures. Below the superconducting transition the differential conductance exhibits a dip at zero bias whose amplitude is a decreasing function of temperature and/or magnetic field. These results are interpreted qualitatively using a picture based on the suppression of Andreev reflection as a consequence of the high spin polarization of the carriers in the half-metallic ferromagnet. © 1998 American Institute of Physics.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed measurements of the a-b plane longitudinal and transverse magnetization anisotropy on an untwinned, high quality single crystal of LuBa2Cu3O7−x in magnetic fields below Hc1 as a function of temperature, from 2 K to the transition temperature and the angle between the field and a fixed direction in the a-b plane. When the superconducting order parameter has nodes on the Fermi surface, such as the case of the spin-singlet dx2−y2 order parameter, nonlinear effects associated with low-energy quasiparticles should become important.1 It was pointed out by Yip and Sauls that these effects will be most important at low temperatures. They should be observable in a measurement of the anisotropy of the magnetization or the magnetic torque. The magnetization is predicted to develop an anisotropic component transverse to the applied field. Anisotropic transverse magnetization with dx2−y2 symmetry is not seen in the temperature regime 5 to 25 K. Our results set stringent limits on the anisotropy of the transverse magnetization in this range. Within the resolution of our experiment no evidence for d-wave pairing is observed.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5874-5874 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The creep and flow of vortices have been subjects of study because they give rise to nonzero electrical resistance even below the superconducting transition temperature. In the classical model of thermally activated creep of vortices the resistance vanishes exponentially at low temperatures with a dependence given by an Arrhenius form. Non-Arrhenius behavior at low temperatures can result from an alternative to the thermal processes involving macroscopic quantum tunneling. Unusual temperature dependence of electrical resistance has been observed in ultrathin superconducting films of Pb, Al, and Bi in small magnetic fields. At low temperatures, film sheet resistances varied with temperatures as R≈R0 exp(T/T0), where T0 and R0 are constants. The parameter T0 is independent of the sheet resistance at high temperatures. These results are not expected in conventional models of vortex motion involving thermal activation, but may be explained using a quantum tunneling picture.1
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-temperature anomalous magnetoresistance has previously been reported in disordered ultrathin DyBa2Cu3O7−x films. This unusual behavior was associated with interactions between the charge carriers and a magnetic lattice. Here, new results are presented showing a peak in the temperature dependence of the resistivity near the Dy3+ Néel temperature. A calculation is included which shows that the peak in R(T) is consistent with spin disorder scattering from the Dy3+ ions as they order antiferromagnetically. These observations lend support to the suggestion, based on neutron scattering studies, that the Dy3+ interactions are not strictly dipolar and that the electrons may contribute to the magnetic ordering of the Dy3+ sublattice.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of a natural buffer layer has been observed for DyBa2Cu3O7−x films grown on Si substrates. The best DyBa2Cu3O7−x film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-A(ring) thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of the DyBa2Cu3O7−x film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-A(ring) amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 A(ring) of chemical interdiffusion.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3563-3567 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A technique has been devised for precise in situ sample angular positioning and readout in a commercial superconducting quantum interference device (SQUID) susceptometer. The axis of rotation is perpendicular to the applied magnetic field and the temperature range is from 2 K up to room temperature. The technique has an accuracy in angular position of about 0.3%, approximately one degree over one complete rotation. A small coil with an ac current excitation is fixed on the sample stage, and the ac SQUID response is used to determine the angular position of the stage. © 1998 American Institute of Physics.
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