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  • 1
    Monograph available for loan
    Monograph available for loan
    Riemannsche Geometrie und Tensoranalysis (1959)
    Berlin : Dt. Verl. der Wiss.
    Associated volumes
    Details Availability
    Call number: O 2496(42) ; 3199
    In: Hochschulbücher für Mathematik
    Type of Medium: Monograph available for loan
    Pages: 606 S. : graph. Darst.
    Series Statement: Hochschulbücher für Mathematik 42
    Location: Upper compact magazine
    Location: Upper compact magazine
    Branch Library: GFZ Library
    Branch Library: GFZ Library
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  • 2
    Monograph available for loan
    Monograph available for loan
    Mathematische Statistik in der Technik : kurzer Lehrgang (1963)
    Berlin : Dt. Verl. der Wiss.
    Details Availability
    Call number: O 2607(9) ; 4418
    Type of Medium: Monograph available for loan
    Pages: 431 S.
    Series Statement: Mathematik für Naturwissenschaft und Technik 9
    Language: German
    Location: Upper compact magazine
    Location: Upper compact magazine
    Branch Library: GFZ Library
    Branch Library: GFZ Library
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  • 3
    Monograph available for loan
    Monograph available for loan
    Die Algenflora der Schirmacheroase (Ostantarktika) : mit 14 Tabellen (1991)
    Berlin [u.a.] : Cramer
    Associated volumes
    Details Availability
    Call number: AWI Bio-93-0023 ; AWI G2-92-0401
    In: Nova Hedwigia / Beiheft, 103
    Type of Medium: Monograph available for loan
    Pages: 195 Seiten , Illustrationen
    ISBN: 3443510256
    Series Statement: Nova Hedwigia / Beiheft 103
    Language: German
    Branch Library: AWI Library
    Branch Library: AWI Library
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  • 4
    Monograph available for loan
    Monograph available for loan
    Geographische Rundschau (1991)
    Braunschweig [u.a.] : Westermann
    Details Availability
    Call number: AWI G2-91-1560
    Type of Medium: Monograph available for loan
    Pages: 397 S. : graph. Darst.
    Branch Library: AWI Library
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  • 5
    Series available for loan
    Series available for loan
    Beiträge zur Antarktisforschung (1981)
    Berlin : Nationalkomitee für Geodäsie und Geophysik bei der Akademie der Wissenschaften der Deutschen Demokratischen Republik
    Associated volumes
    Details Availability
    Call number: MOP Per 581 ; MOP Per 581(1/8) ; ZSP-319/A-1(Sonderheft) ; ZSP-319/A-1(Sonderheft, 2. Ex.)
    In: Geodätische und geophysikalische Veröffentlichungen : Reihe 1, Heft 8, Sonderheft 1
    Type of Medium: Series available for loan
    Pages: 107 Seiten , Illustrationen
    Edition: Sonderheft des NKSCAR der DDR
    Series Statement: Geodätische und geophysikalische Veröffentlichungen : Reihe 1 8
    Language: German , English
    Note: Inhalt: I. Zoologische Untersuchungen im Gebiet der sowjetischen Antarktisstation "Bellinghausen" / R. BANNASCH und K. ODENING. - II. Deuterium- und 18O-Variationen in Seen der Schirmacher-Oase (Ostantarktika) / W. RICHTER und G. STRAUCH. - III. Stable isotope investigations in Antarctica / H. SCHÜTZE, G. STRAUCH, K. WETZEL. - IV. The influence of degradation processes on the isotopic composition of Antarctic precipitation / R. DER. - V. Sommerliche Eisvariationen in der Olaf-Prydz-Bucht / H. GERNANDT. - VI. Zur Geologie des nördlichen Teils des Neptune Range / Pensacola-Gebirges (Antarktika) / W. WEBER und L. V. FEDOROV. - VII. Beobachtungen am Krill (Euphausia superba DANA) im atlantischen Sektor der Antarktis in der Sommersaison 1978 und 1979 / S. HOLZLÖHNER. - VIII. Forschungsreise eines Zubringertrawlers in die Antarktis / G. GUBSCH und U. HOFFMANN.
    Location: MOP - must be ordered
    Location: MOP - must be ordered
    Location: AWI Archive
    Location: AWI Archive
    Branch Library: GFZ Library
    Branch Library: GFZ Library
    Branch Library: AWI Library
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  • 6
    Electronic Resource
    Electronic Resource
    Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2459-2465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) and Raman measurements were performed on AlInAs grown lattice matched to InP by molecular beam epitaxy at reduced growth temperature (Ts). The PL of layers grown at Ts above 500 °C is dominated by excitonic emission, whereas for lower Ts donor-acceptor related transitions prevail. Below a critical Ts of 450 °C a marked shift towards lower emission energies with a maximum shift near 400 °C is observed that is attributed to a modified band edge due to clustering. Comparable trends are detected by Raman spectroscopy. The observed reduction of the separation of the InAs- and AlAs-like longitudinal optical phonon modes (LOInAs and LOAlAs) demonstrates local internal strain to be present as a result of clustering. This effect reaches a maximum for Ts at 400 °C. A shift of the LOInAs solely accounts for this behavior. In addition strong asymmetric broadening of the LOAlAs-phonon line observed on low Ts material indicates an increasing reduction of the correlation length and suggests the structural disorder to be correlated with the AlAs sublattice. Taking into account the pressure dependence of the AlInAs energy gap and the frequency shift of the LOInAs phonon, the local internal strain equivalent pressure was calculated from the PL and Raman results, respectively, giving similar values of up to 5 kbar for material grown at 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357597
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxy growth of CdTe on InSb (110) monitored in situ by Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4060-4065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe epitaxial layers were deposited on clean cleaved InSb(110) substrates by molecular-beam epitaxy at room temperature and elevated temperatures. The formation of interface and layer was investigated using Raman spectroscopy as a growth monitor, i.e., Raman spectra were taken on line without interruption of the deposition process. Fabry–Pérot interference of the incident as well as the scattered light within the heterostructure leads to a characteristic modulation of the substrate phonon scattering intensity. The modulation is calculated and serves as a measure for the layer thickness. For the deposition at elevated temperatures the true surface temperature is determined from the InSb TO phonon frequency shift. While at a substrate temperature of 150 °C the crystalline quality of the CdTe layer was improved compared to room-temperature growth, the deposition of CdTe at 300 °C resulted in the formation of a layer consisting of In2Te3 and liberated Sb. The effect of the laser radiation on the growth process at different temperatures is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359862
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  • 8
    Electronic Resource
    Electronic Resource
    A reflectance anisotropy spectroscopy study of molecular sulfur adsorption on the GaAs(100) surface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1948-1952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of molecular sulfur with the GaAs(100) surface has been investigated by reflectance anisotropy spectroscopy (RAS). The use of arsenic-capped GaAs(100) surfaces provided a means to study the interaction of sulfur with both the arsenic-rich (2×4) and gallium-rich (4×1) surface reconstructions. A sulfur flux was generated in ultra-high-vacuum (UHV) by the thermal decomposition of silver sulfide. The room-temperature deposition of a 1–2 monolayer saturation coverage of sulfur on both arsenic- and gallium-rich surfaces produces a (1×1) low-energy electron-diffraction pattern. This surface displays a strongly anisotropic optical response with RAS spectra which contain two clear features at 3.5 and 5.2 eV. These features become more pronounced as the sulfur-covered surface is annealed up to 500 °C where the surface displays a (2×1) reconstruction. The origin of these spectral features is believed to be due to optical transitions related to the sulfur dimers which are formed on this surface. The extent of the reduction in surface band bending induced by the sulfur coverage can be monitored by measuring the magnitude of the linear electro-optic feature which appears prominently in the RAS spectra of high-doped GaAs samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360234
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  • 9
    Electronic Resource
    Electronic Resource
    Raman monitoring of semiconductor growth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7330-7333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper it is demonstrated that Raman spectroscopy can be used for in situ online monitoring of semiconductor layer growth. For this purpose an ultra-high-vacuum chamber was designed to suit molecular beam epitaxial growth as well as simultaneous optical measurements utilizing a multichannel detection Raman system. As a result Raman spectra can be taken while growth progresses. As shown by the example of InSb growth, they provide information on the interface chemistry, crystal quality of the growing layer, and the growth mode as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356644
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  • 10
    Electronic Resource
    Electronic Resource
    In situ reflectance anisotropy studies of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3115-3120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflectance anisotropy spectroscopy was used to examine the surfaces of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy, where the Al mole fraction was varied across the whole composition range x=(0.0,0.25,0.50,0.75,1.0). All surfaces were also independently characterized using reflection high-energy electron diffraction, and were found to exhibit a c(4×4) reconstruction. After initial changes in the spectra were observed on depositing very thin layers (≤20 monolayers), in the intermediate thickness range a regime was entered in which strong optical interference effects appeared. These effects are accurately accounted for using a four-media model. For thicker layers (≥8000 monolayers), interference effects were seen to diminish and spectra representative of the surfaces of bulk AlxGa1−xAs were obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358663
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