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  • 1
    Electronic Resource
    Electronic Resource
    Optical capture cross sections of palladium in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 298-301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical electron and hole capture cross sections for the deep levels Ec−0.22 eV and Ev+0.33 eV associated to Pd in Si have been measured using constant-capacitance deep level optical spectroscopy and optical admittance spectroscopy. The experimental results fit well to the model of Lucovsky. The threshold energies obtained for the electron and hole emission from the Ec−0.22 eV level are 250 and 890 meV, respectively. The threshold energies obtained for the electron and hole emission from the Ev+0.33 eV level are 820 and 330 meV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347712
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  • 2
    Electronic Resource
    Electronic Resource
    Interwell enhancement of the photoluminescence efficiency in GaAs/AlGaAs quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5136-5139 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of carriers generated in quantum wells adjacent to a single 100-A(ring)-thick GaAs quantum well. The AlGaAs barrier thicknesses were such (200 A(ring)) that the different quantum wells were not electronically coupled. At certain excitation power densities we observe an increase in luminescence in the excitation spectrum of the 100 A(ring) quantum well corresponding to transitions in the quantum wells of different thicknesses. We attribute these interwell effects to the partial saturation of mutual nonradiative centers in the barrier material. At high excitation power densities we observe previously unreported negative interwell transitions which we attribute to an internally generated electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350567
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  • 3
    Electronic Resource
    Electronic Resource
    Improved binary collision approximation ion implant simulators (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 658-667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An efficient binary collision approximation (BCA) ion implant code with good prediction capabilities for semiconductor materials (Si, GaAs, SiC) with only one fitting parameter for low implantation doses is presented. It includes specific interatomic potentials and recent improvements in physical models for inelastic stopping. A periodic ab initio full bond electron density for the target is used. Damage accumulation is supported using a modified Kinchin–Pease model [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955)]. Also, some of the BCA integration algorithms and target selection procedure have been refined. An algorithm commonly used for statistical noise reduction has been modified to also improve the noise reduction in the lateral and shallow zones. The agreement with experiments is good, even under channeling conditions and for different target materials. A comparison with experimental secondary ion mass spectroscopy results for several projectiles and targets is presented. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424052
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon in silicon: Modeling of diffusion and clustering mechanisms (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1582-1587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon often appears in Si in concentrations above its solubility. In this article, we propose a comprehensive model that, taking diffusion and clustering into account, is able to reproduce a variety of experimental results. Simulations have been performed by implementing this model in a Monte-Carlo atomistic simulator. The initial path for clustering included in the model is consistent with experimental observations regarding the formation and dissolution of substitutional C–interstitial C pairs (Cs–Ci). In addition, carbon diffusion profiles at 850 and 900 °C in carbon-doping superlattice structures are well reproduced. Finally, under conditions of thermal generation of intrinsic point defects, the weak temperature dependence of the Si interstitial undersaturation and the vacancy supersaturation in carbon-rich regions also agree with experimental measurements. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1489715
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  • 5
    Electronic Resource
    Electronic Resource
    Simulation of cluster evaporation and transient enhanced diffusion in silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2395-2397 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evaporation of {311} self-interstitial clusters has recently been linked to the phenomenon of transient enhanced diffusion in silicon. A theory of cluster evaporation is described, based on first-order kinetic equations. It is shown to give a good account of the data over a range of temperatures. The theory simultaneously explains several of the unexpected features of transient enhanced diffusion, including the apparently steady level of the enhancement during its duration, and the dependence of the duration on implant energy and dose. The binding energy used to match the theory to data is in good agreement with molecular dynamics calculations of cluster stability in silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116145
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  • 6
    Electronic Resource
    Electronic Resource
    Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6182-6184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron in silicon doping superlattices is used to trace native point defect behavior during a 790 °C, 15 min anneal following a 200 keV, 1×1013/cm2 Pb+ or 40 keV 1×1013/cm2 Si+ implant. These nonamorphizing implants lead to transient enhanced diffusion and clustering of the boron doping spikes. The enhancement in B diffusion scales sublinearly with mass of the ion implant. Clustering of the boron occurs deeper and more extensively in the Pb+-implanted sample due to greater mass of the ion. Measurement of the number of interstitials bound by extended defects after an 800 °C/10 s rapid thermal anneal confirm that the Pb+ implant has "+4.5" of the implant dose bound by extended defects, compared to "+0.6" in the Si+ implant for the same anneal. Both of these results indicate that the "+1" model is not valid for heavy mass ion implants. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367489
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  • 7
    Electronic Resource
    Electronic Resource
    Optical admittance spectroscopy: A new method for deep level characterization (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2541-2545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for the optical cross-section measurement of deep levels in junctions is presented. It is based on the measurement of the capacitance and conductance of the junction under illumination, as a function of the photon energy hν and the frequency of the measuring signal. This technique has been applied to the measurement of the optical capture cross section σon of the Au acceptor level corresponding to the emission of electrons to the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337930
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  • 8
    Electronic Resource
    Electronic Resource
    Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 409-411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5×1013 cm−2 Si into (001)Si, followed by a high temperature (815 °C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the "+1'' model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116701
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  • 9
    Electronic Resource
    Electronic Resource
    B diffusion and clustering in ion implanted Si: The role of B cluster precursors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2285-2287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive model for B implantation, diffusion and clustering is presented. The model, implemented in a Monte Carlo atomistic simulator, successfully explains and predicts the behavior of B under a wide variety of implantation and annealing conditions by invoking the formation of immobile precursors of B clusters, prior to the onset of transient enhanced diffusion. The model also includes the usual mechanisms of Si self-interstitial diffusion and B kick-out. The immobile B cluster precursors, such as BI2 (a B atom with two Si self-interstitials) form during implantation or in the very early stages of the annealing, when the Si interstitial supersaturation is very high. They then act as nucleation centers for the formation of B-rich clusters during annealing. The B-rich clusters constitute the electrically inactive B component, so that the clustering process greatly affects both junction depth and doping level in high-dose implants. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118839
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  • 10
    Electronic Resource
    Electronic Resource
    A magnetic control valve for flowing solids: exploratory studies (1982)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 21 (1982), S. 717-721 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i200019a030
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