Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 3792-3798
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Consistent preservation of 〈01¯1¯〉-oriented grating corrugations with 2850-A(ring) period and 1500-A(ring) height on (100) InP substrates has been achieved during thermal cycling at 660 °C for 60 min in a H2 ambient, using roughened GaAs cover slices. It is found that transport of Ga and As causes the formation of a graded 25-A(ring)-thick InGaAsP alloy on the surface of the gratings, as detected by Auger and x-ray photoelectron spectroscopic analysis. This preservation technique eliminates the need for lower-temperature crystal growth of distributed feedback laser wafers by liquid-phase epitaxy (LPE). Successful growth of distributed feedback laser wafers using conventional high-temperature LPE is demonstrated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341385
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