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  • 1
    Electronic Resource
    Electronic Resource
    Measurement of thermal stress and stress relaxation in confined metal lines. I. Stresses during thermal cycling (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1716-1724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method based on the bending beam technique has been developed to measure the thermal stresses of fine lines confined by a dielectric layer. This method has been employed to determine the thermal stress of Al (2 at. % Cu) lines passivated by a SiO2 overlayer between room temperature and 400 °C. The effect of quartz confinement was analyzed by matching the thermal displacement at the metal/passivation interfaces and by imposing a mechanical equilibrium condition on the structure. The analysis enables us to deduce the triaxial stress components of metal and passivation from measurements of the substrate bending parallel and perpendicular to the length direction of the lines. Results of the measurements show a substantial stress enhancement as a result of the confinement, with the stress level significantly higher than that of a passivated blanket film. Parameters that influence the magnitude of the stress components are line geometry, layer deposition conditions, and the extent of plastic deformation during thermal cycling. Results of the measurements are consistent with those determined using x-ray techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354826
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  • 2
    Electronic Resource
    Electronic Resource
    Measurement of thermal stress and stress relaxation in confined metal lines. II. Stress relaxation study (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1725-1730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bending beam technique and stress analysis developed for stress measurements of fine line structures have been applied to investigate stress relaxation in confined Al (2 at. % Cu) line structures on a Si substrate. The observed relaxation of the line structure is compared with corresponding unpassivated and passivated layered film structures. The overall behavior of all structure is similar, showing an initial plastic deformation, then a fast relaxation in sequence with a log(time) slow relaxation. The kinetics of these relaxation processes are found to decrease due to the presence of the passivation and a higher degree of dielectric layer confinement. In addition, the relaxation behavior of the principal stress components of the line structure is anisotropic and does not vary monotonically with the annealing temperature. The results are attributed to the relaxation mechanism and interaction at the metal/dielectric interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355327
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  • 3
    Electronic Resource
    Electronic Resource
    Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3981-3989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, hydrogenated amorphous silicon (a-Si:H) is deposited at room temperature by rf glow discharge at a high deposition rate using a tubular reactor with cylindrical symmetry (concentric-electrode plasma-enhanced chemical vapor deposition, CE-PECVD). Using the novel CE-PECVD design, room-temperature deposition of a-Si:H with growth rates up to 14 A(ring) s−1, low hydrogen concentration ((approximately-less-than)10%), and the bonded hydrogen in the Si-H monohydride configuration, is achieved for the first time using an rf glow-discharge technique. The influence of the deposition parameters (silane flow rate, pressure, and power density) on the growth rate, optical band gap, and silicon-hydrogen bonding configuration, is quantitatively predicted using a deposition mechanism based on the additive contribution of three growth precursors, SiH2, SiH3, and Si2H6, with decreasing sticking coefficients of 0.7, 0.1, and 0.001, respectively. The low hydrogen concentration is due to the enhanced ion bombardment resulting from the concentric electrode design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350870
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  • 4
    Electronic Resource
    Electronic Resource
    Measured radial and angular distributions of sputtered atoms in a planar magnetron discharge (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3611-3618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of current, voltage, and magnetic field on the radial profile of ions sputtering a flat cathode has been studied in a hollow cathode enhanced magnetron discharge. The measurements of sputtering rate were made using a directional quartz crystal microbalance, translated parallel to the cathode. We find the radial sputtering profiles are determined by the plasma sheath thickness, which can be calculated using the Child–Langmuir law for collisionless space-charge limited current flow. A hollow cathode electron source was used to control the sheath thickness by increasing the current to the magnetron cathode at a given voltage and constant pressure (0.07 Pa). Uniformity of the radial profiles increases with decreasing sheath thickness (i.e., at lower voltages and higher current densities). The angular distribution of sputtered atoms was measured by changing the polar angle of the microbalance. The angular distributions are asymmetric on either side of the radial position where the ion current density to the cathode is maximum. We believe this is due to ions which impact the cathode at angles up to ≈10° from the normal, having been radially accelerated away from the position of maximum plasma density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356073
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  • 5
    Electronic Resource
    Electronic Resource
    Internal stress and elasticity of synthetic diamond films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 302-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal tensile stress in polycrystalline diamond films deposited on silicon substrates has been measured from 100 to 700 K by a vibrating-membrane method. The stress increases strongly with temperature, in a manner consistent with the elastic accommodation of the differential thermal strain between diamond and silicon. The results indicate that the films contain a tensile growth stress of about 500 MPa at the deposition temperature of 1123 K. Derived values of the biaxial elastic modulus fall in the range 730–850 GPa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103721
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of a negative electron affinity for boron nitride (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3912-3914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study reports UV-photoemission (UPS) measurements made on boron nitride crystals and thin films. The materials examined are commercial grade c-BN powder and thin films of BN deposited with ion beam assisted e-beam evaporation and laser ablation. The thin film samples examined exhibited varying amounts of sp3 (cubic) and sp2 (hexagonal, amorphous) bonding as determined by FTIR measurements. The UPS measurements displayed the spectral distribution of the low energy photoemitted electrons and the total energy width of the spectra. These characteristics can be related to the electron affinity. The measurements on several of the BN powder and thin film samples revealed features in the emission spectra which are indicative of a negative electron affinity (NEA) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115315
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  • 7
    Electronic Resource
    Electronic Resource
    Harnessing reverse annealing phenomenon for shallow p-n junction formation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5185-5190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which peculiarities in carrier concentration, resistivity, and F atoms redistribution occurred. It was reasoned that the "under-surface" specific region is enriched with vacancy-type defects while the "amorphous/crystalline (a/c) interface" region is enriched with interstitial type defects. After annealing at a temperature corresponding to the reverse annealing phenomenon, boron atoms were activated in the "under-surface" and deactivated in the "a/c interface" region. The possibility of PMOS transistor fabrication with ultrashallow p+-n junction (60 nm) and low leakage current by F++B+ implantation and low temperature (600–700) °C annealing by using this phenomenon was demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366323
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetron sputtering and laser patterning of high transition temperature Cu oxide films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc Y-Ba-Cu-O films have been prepared by dc magnetron sputtering of metal alloy targets. To circumvent the negative ion effect, two alloy targets, YCu and BaCu, are sputtered in an argon atmosphere with an oxygen spray near the substrate. Films deposited on sapphire with onsets at 92 K and a 6° transition width (10–90%) have been achieved using this technique. These films have been successfully patterned with the technique of laser ablation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98986
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  • 9
    Electronic Resource
    Electronic Resource
    Thin-film Bi-Sr-Ca-Cu-O high-temperature superconductors using pulsed laser evaporation from sintered disks (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 532-533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of the high-temperature superconductor in the Bi-Sr-Ca-Cu-O system were deposited by pulsed laser evaporation from a ceramic disk. Films deposited onto (100) MgO show x-ray diffraction patterns characteristic of c-axis textured Bi2(Sr,Ca,Bi)3Cu2Ox phase following annealing for 10 min at 850 °C in 20% O2-80% N2. These textured films have zero resistance at 78 K and show resistance drops near 110 K. The effects of the annealing environment on the electrical and structural properties are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100627
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  • 10
    Electronic Resource
    Electronic Resource
    Superconductivity in Bi-Sr-Ca-Cu-O (invited) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5792-5796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structure and superconducting properties of a single phase polycrystalline composition given by Bi2.2Sr1.7Ca1.2Cu2O8+δ as well as measurements on single crystals. X-ray and electron diffraction analyses of both single-crystal and single phase materials show an incommensurately modulated orthorhombic superlattice, derivable from a pseudotetragonal substructure. The various compositions have the common feature that the major portion of the superconductivity disappears above 85 K but there is a small tail in the diamagnetic susceptibility extending to 110 K, above which the sample becomes paramagnetic. Single crystals, grown by the flux method, exhibit the same incommensurately modulated pseudotetragonal structure as the ceramic, but show a higher diamagnetic shielding and in some cases also have tails. The critical currents in the (ab) plane are only about one-fifth of the value found for YBa2Cu3O7 crystals and the anisotropy is smaller. These reduced values may be an intrinsic property of the modulated superlattice but more likely are due to stacking faults and other defects in the crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342207
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