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  • 1
    Electronic Resource
    Electronic Resource
    Transient response of quasiparticle injected superconducting links (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 489-491 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated submicron injection-controlled NbN links with gain and measured their injection-triggered superconducting-to-normal transition to occur in 0.5–2.6 ns at 4 K, governed by condensate dynamics. The transient pulse shape displays a rising-edge kinetic-inductance spike and a strong dependence on the amplitude of the injected quasiparticle current similar to microbridges driven by supercritical currents. A modified dynamic effective-temperature model is used to interpret the transient time and the pulse shape.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101861
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth of YBa2Cu3O7−δ thin films on LiNbO3 substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1261-1263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of YBa2Cu3O7−δ thin films on Y-cut LiNbO3 substrates using a standard laser ablation technique is reported. Resistance of the films shows a normal metallic behavior and a very sharp (〈1 K) superconducting transition with Tc(R=0) of 92 K. High critical current density of Jc(77 K)=2×105 A/cm2 is observed, which is in accordance with epitaxial growth. Film orientation observed from x-ray diffraction spectra indicates that the c axis is normal to the substrate plane and the a axis is at 45° to the [11.0] direction of the hexagonal lattice of the substrate with two domains in mirror image to the (110) plane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102470
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  • 3
    Electronic Resource
    Electronic Resource
    Control of the in-plane epitaxy for bi-epitaxial grain boundary junctions using a new multilayer structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4584-4588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to obtain 100% bi-epitaxial 45° grain boundary junctions of YBa2Cu3Ox (YBCO), we have systematically examined the in-plane epitaxy of CeO2 films grown on MgO substrates. The inevitable presence of CeO2[110](parallel)MgO[100] causes mixtures of in-plane rotation of 0° and 45° between YBCO/CeO2/MgO and YBCO/MgO. We have further developed a new structure, namely YBCO/CeO2/Yttria-stabilized ZrO2/MgO and YBCO/MgO boundary, so that 100% in-plane rotation of 45° can be routinely obtained. The model of the in-plane epitaxial relationship between the multilayers using near coincident site lattices was proposed. The critical current density of the junctions made on the boundary is 3×103 A/cm2 at 77 K, while the order of the Jc of YBCO films on both sides of the grain boundary is 106 A/cm2. The current-voltage characteristics of the junctions show resistively shunted junction behavior. The better epitaxy of our new structure can lead to a better control of grain boundary critical current density. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359557
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  • 4
    Electronic Resource
    Electronic Resource
    Shapiro steps on current-voltage curves of dc SQUIDs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 242-245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied in detail the current-voltage (I-V) curves of dc SQUIDs in the presence of rf fields in the frequency range 2–18 GHz. Strong voltage locking at half-integral as well as the usual integral Shapiro step spacing is observed when the applied dc-magnetic flux is close to half-integral numbers of flux quanta. Numerical simulations are in excellent agreement with the experimental I-V curves. The half-integral steps are found to be associated with the flip-flop between two adjacent fluxoid states of the SQUID synchronized to the rf field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341471
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  • 5
    Electronic Resource
    Electronic Resource
    Thin-film YBaCuO superconductors formed by Cu/BaO/Y2O3 layer structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 72-74 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film superconductors of the YBaCuO family have been formed using layer structures of Cu, BaO, and Y2O3 deposited on different substrates by electron beam evaporation. Using a thickness ratio of Cu, BaO, and Y2O3 layers off that of the stoichiometric YBa2Cu3O7 phase, superconducting films were formed on MgO and SrTiO3 substrates, with a Tc for zero resistance exceeding 77 K. The films were found to be composed of the superconducting YBa2Cu3O7 phase and the green Y2BaCuO7 phase, with the excessive Cu repelled to the surface in an oxidized form. The studies also provide information on the dependence of the superconducting transition on the annealing temperatures and the substrates used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99328
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetron sputtering and laser patterning of high transition temperature Cu oxide films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc Y-Ba-Cu-O films have been prepared by dc magnetron sputtering of metal alloy targets. To circumvent the negative ion effect, two alloy targets, YCu and BaCu, are sputtered in an argon atmosphere with an oxygen spray near the substrate. Films deposited on sapphire with onsets at 92 K and a 6° transition width (10–90%) have been achieved using this technique. These films have been successfully patterned with the technique of laser ablation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98986
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  • 7
    Electronic Resource
    Electronic Resource
    In situ resistance of Y1Ba2Cu3Ox films during anneal (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 157-159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of electrical resistance of thin films of the high-temperature superconductor Y1Ba2Cu3Ox have been carried out between 100 and 800 °C, and in the range between roughly 0.1 and 1 atm of ambient oxygen. Results are reported for both quick and slow heating, and also for sudden changes in oxygen partial pressure. At constant temperature we observe that the response to the oxygen partial pressure is both quick and reversible. We show evidence that quick heating is preferable, and we also observe features in the resistance similar to those reported in bulk samples and interpreted as an order–disorder transition of oxygen in the one-dimensional Cu-O chains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99037
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  • 8
    Electronic Resource
    Electronic Resource
    Far infrared spectroscopy with subpicosecond electrical pulses on transmission lines (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 548-550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically generated and detected electrical pulses on transmission lines in the subpicosecond range have frequencies extending up to 1 THz, thereby covering the far infrared region of the spectrum from 0 to 30 cm−1. We have studied the propagation of these short pulses through a section of the transmission line covered with erbium iron garnet which shows distinct absorption lines in the far infrared at low temperatures (2–30 K). The absorption and dispersion of the garnet modify the shape of the pulse, and the absorption spectrum is obtained by Fourier transforming the propagated pulse shape.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98395
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  • 9
    Electronic Resource
    Electronic Resource
    Micropatterning of high Tc films with an excimer laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1271-1273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micron-wide lines of high Tc Y-Ba-Cu-O have been successfully patterned by ablating the films with a pulsed excimer laser. The high Tc films are mounted onto a computer-controlled stepping stage and irradiated with a demagnified image of a variable-size rectangular aperture. This technique has been used for fabricating features ranging from several centimeters in length to submicron in width without any degradation in Tc. For example, a superconducting microstructure of Y-Ba-Cu-O, nominally 1 μm wide and 2.5 μm long, with a Tc (R=0) of 88 K and a Jc of 5×104 A/cm2 at 4.2 K was fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99678
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  • 10
    Electronic Resource
    Electronic Resource
    Photoinduced hole-doping effect in (Y0.5Ca0.5)Ba2Cu3Oδ films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3284-3286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The persistent photoinduced changes in the critical temperature TC and the normal state conductivity of (Y0.5Ca0.5)Ba2Cu3Oδ thin films are studied. Previously such effects have been observed only in underdoped YBa2Cu3Oδ or YSrxBa2−xCu3Oδ, which always lead to the enhancement of both TC and conductivity. The current system can be doped from the underdoped regime to the overdoped regime by increasing its oxygen content. The photoinduced TC reduction in the overdoped films is observed. The simultaneous enhancement of conductivity is consistent with the interpretation that photoillumination always increases hole concentration in the "123" systems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120323
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