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Observation of a negative electron affinity for boron nitride (1995)

Powers, M. J. ; Benjamin, M. C. ; Porter, L. M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 3912-3914

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: This study reports UV-photoemission (UPS) measurements made on boron nitride crystals and thin films. The materials examined are commercial grade c-BN powder and thin films of BN deposited with ion beam assisted e-beam evaporation and laser ablation. The thin film samples examined exhibited varying amounts of sp3 (cubic) and sp2 (hexagonal, amorphous) bonding as determined by FTIR measurements. The UPS measurements displayed the spectral distribution of the low energy photoemitted electrons and the total energy width of the spectra. These characteristics can be related to the electron affinity. The measurements on several of the BN powder and thin film samples revealed features in the emission spectra which are indicative of a negative electron affinity (NEA) surface. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115315

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