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  • 1
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    Recrystallization and grain growth of cold-drawn gold bonding wire (2003)
    Springer
    Details
    Publication Date: 2003-05-01
    Print ISSN: 1073-5623
    Electronic ISSN: 1543-1940
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Springer
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    PAPER CURRENT
  • 2
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    The IVS data input to ITRF2014 (2015)
    GFZ Data Services
    Details
    Publication Date: 2020-02-12
    Type: info:eu-repo/semantics/workingPaper
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    PAPER (OA)
  • 3
    Electronic Resource
    Electronic Resource
    Bi-substituted iron garnet films with fine grains prepared by pyrolysis : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6301-6303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline films of Y3−xBixFe5−yAlyO12 (x=0.5–2.0, y=0–1.2) were prepared on glass substrates by pyrolysis combined with spin-coating techniques. SEM and TEM studies revealed that the grain size increases with x but decreases with y. This means that enhancing the magneto-optical effect by increasing x results in large grain size, which causes a strong media noise due to light scattering at grain boundaries. To solve this problem we have made double-layer films. An underlayer of polycrystalline film low in x, hence small in grain size, was first made by a conventional pyrolysis process. On this an upper layer high in x was made. The upper layer was crystallized at a temperature ∼50 °C lower and was ten times smaller in grain size than the single-layer film with an equal x. Furthermore, the upper layer crystallized at the lower temperature (590 °C) was exceedingly homogeneous.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349974
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructure and MO enhancement in Ni-substituted Ba ferrite films prepared by sputtering (abstract) : 37th annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6145-6145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Ba ferrite films are promising media for magneto-optical (MO) recording because they have strong perpendicular magnetic anisotropy. However, MO activity of the Ba ferrites is low, which makes the feasibility as a practical medium poor. The MO activity is reported to be prominently enhanced by specific ions such as Bi3+, Co2+, and light rare earth ions in garnet ferrites, while, in Ba ferrites, the MO enhancement ions except Co2+ have not yet been known. We have recently found that Ni2+ substitution also enhances Faraday rotation in the visible region around hν=2.5 eV. In this paper we describe MO properties as well as microstructures of Ba1−xMxFe12−xNixO19 (M=La, Pr, x=0, 0.3, 0.6) films prepared by rf sputtering. The films were deposited on Gd3Ga5O12 (GGG) single crystal substrates at substrate temperature (Ts) of 400–600 °C by the conventional rf diode sputtering. When Ts≥550 °C for the incident rf power over 19 W/cm2, the films in situ crystallized in Ba–ferrite single phase. They had c-crystal axis well oriented normal to the film plane. The SEM and TEM observations revealed that the grain size in the films increases from several nm to ∼300 nm with increasing the incident power. The films with larger grains showed higher saturation magnetization and lower coercivity. Faraday rotation of the films was clearly enhanced in the visible around 2.5 eV with increasing Ni2+ substitution, though they showed rather complicated spectral structure inherent to the Ba ferrites. The enhancement factor of specific Faraday rotation at 2.5 eV was as large as 2×104 deg/x, independent of the kind of the rare earth ion substituted for Ba2+ for charge compensation. This implies that the substitution of the rare earth ion itself enhances no Faraday rotation in Ba ferrites. Thus, the MO enhancement around 2.5 eV may be attributed to the octahedrally coordinated Ni2+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352729
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  • 5
    Electronic Resource
    Electronic Resource
    Strong critical adsorption at the liquid-vapor surface of a nonpolar mixture (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 3058-3062 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: For a critical binary liquid mixture where the surface tension difference between the two components is very large, the component with the lowest surface tension completely saturates the liquid-vapor surface. The variation in the local volume fraction v(z), with depth z into the liquid mixture, is described by a universal surface scaling function P±≡P±(z/ξ±), which takes differing forms in the one- (+) and two-phase (−) regions, where ξ represents the bulk correlation length. Carpenter et al. [Phys. Rev. E 59, 5655 (1999); 61, 532 (2000)] determined P± using the ellipsometric critical adsorption data of four different critical binary liquid mixtures. A deficiency of this prior study was that each of the liquid mixtures possessed at least one polar component, which could have generated distortions in the function P±(z/ξ±). In this publication, we demonstrate that P±, determined in the previous study, provides an excellent description of the nonpolar critical binary liquid mixture 1,1,2,2-tetrabromoethane+n-dodecane. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436079
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  • 6
    Electronic Resource
    Electronic Resource
    Grain size dependence of electromigration-induced failures in narrow interconnects (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2577-2579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the median time to failure (MTTF) and deviation in the time to electromigration-induced failure (DTTF) of Al alloy thin-film lines are reported. As the ratio of the linewidth to the grain size decreases, MTTF decreases to a minimum and then increases exponentially. DTTF continuously increases. We show that serial and parallel failure unit models can be used to explain the grain size and linewidth dependence of the MTTF and DTTF for interconnects. We further note that extrapolation to low cumulative failures based on serial failure models must be based on knowledge of the failure statistics of individual units.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101054
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  • 7
    Electronic Resource
    Electronic Resource
    Comparison of epitaxial growth of PbZr0.53Ti0.47O3 on SrRuO3 and La0.5Sr0.5CoO3 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 549-551 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report structural and ferroelectric properties of epitaxial PbZr0.53Ti0.47O3 thin films on SrRuO3 and La0.5Sr0.5CoO3 grown on (100) LaAlO3 single crystal substrates, where all the films were deposited by the pulsed-laser deposition method. While the PbZr0.53Ti0.47O3 film on La0.5Sr0.5CoO3/LaAlO3 shows (00l)-oriented heteroepitaxial growth with a rhombohedral structure, the PbZr0.53Ti0.47O3 film on SrRuO3/LaAlO3 shows a tetragonal mixture of (00l) and (h00) heteroepitaxial growth and the (00l)-oriented rhombohedral heteroepitaxial growth. The mixture of the rhombohedral and the tetragonal structures of the PbZr0.53Ti0.47O3 film on SrRuO3/LaAlO3 influences the ferroelectric properties by domain pinning. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124418
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  • 8
    Electronic Resource
    Electronic Resource
    Optical transparency of metallic La0.5Sr0.5TiO3+δ thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1426-1428 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We prepared for Mott–Hubbard-type perovskite La0.5Sr0.5TiO3+δ thin films under an oxygen reduced environment, 5% H2/Ar. Control of the partial pressure during deposition could change the conductivity of the films, and induces a metal–insulator transition. In addition, we observed an excellent transparency at visible light with a metallic behavior, where this property could be utilized as a transparent conductor. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402961
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  • 9
    Electronic Resource
    Electronic Resource
    Electric field dependence of ferroelectric phase transition in epitaxial SrTiO3 films on SrRuO3 and La0.5Sr0.5CoO3 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 435-437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electric field dependence of ferroelectric phase transition in epitaxial SrTiO3 (STO) thin films grown by the pulsed-laser ablation deposition method. Metallic oxides SrRuO3 (SRO) and La0.5Sr0.5CoO3 (LSCO) were used as the bottom electrodes, and the bottom electrodes influence the dielectric properties of STO films. The change in the dielectric properties originates from the different work functions and the lattice mismatches among STO film, the bottom electrode, and the substrate. However, the field-induced ferroelectric phase transition temperatures of the STO/SRO/(100) STO and the STO/LSCO/(100) LaAlO3 systems are proportional to the applied electric field, indicating a field-induced first-order ferroelectric phase transition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127001
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of highly conductive RuO2 thin films on (100) Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115715
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