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  • 1
    Electronic Resource
    Electronic Resource
    Grain Growth in Thin Films (1990)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 20 (1990), S. 245-268 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.20.080190.001333
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  • 2
    Electronic Resource
    Electronic Resource
    STRUCTURE EVOLUTION DURING PROCESSING OF POLYCRYSTALLINE FILMS (2000)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 30 (2000), S. 159-190 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Polycrystalline films have wide variety of applications in which their grain structures affect their performance and reliability. Thin film growth techniques and growth conditions affect grain shapes, the distribution of grain sizes, and the distribution of the crystallographic orientations of grains. Variations in these structural properties are affected by the conditions under which grain nucleation, growth, coarsening, coalescence, and thickening occur. General trends in structural evolution in polycystalline films, as a function of processing conditions and materials class, are discussed in terms of these fundamental kinetic processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.30.1.159
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  • 3
    Electronic Resource
    Electronic Resource
    Grain size dependence of electromigration-induced failures in narrow interconnects (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2577-2579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the median time to failure (MTTF) and deviation in the time to electromigration-induced failure (DTTF) of Al alloy thin-film lines are reported. As the ratio of the linewidth to the grain size decreases, MTTF decreases to a minimum and then increases exponentially. DTTF continuously increases. We show that serial and parallel failure unit models can be used to explain the grain size and linewidth dependence of the MTTF and DTTF for interconnects. We further note that extrapolation to low cumulative failures based on serial failure models must be based on knowledge of the failure statistics of individual units.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101054
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of As4 overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 990-992 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated great improvement in the smoothness and defect density of GaAs films on Si by lowering the arsenic overpressure during growth of the initial layer (the first 500 A(ring)) of GaAs. We have studied the morphology and defect density of GaAs on Si films in which the initial layers were grown under either low As4 overpressure (7As4:1Ga, beam equivalent pressure) or high As4 overpressure (15As4:1Ga) conditions, with a constant gallium flux. In the early stages of growth there is a significant change in island morphology depending on the As4 overpressure. There is dramatic improvement of surface smoothness and crystal quality with reduced arsenic overpressure for 500-A(ring)-thick layers both immediately after growth at 350 °C and after heating to 580 °C. Diodes fabricated in 3.5-μm-thick films grown on initial layers that were grown under low arsenic overpressure have a very sharp reverse breakdown at voltages as high as 45 V, whereas diodes fabricated in films grown on initial layers that were grown under high arsenic overpressure have a soft reverse breakdown at about 5 V. This demonstrates a significant reduction in the density of electrically active defects in the thick GaAs films with decreasing arsenic overpressure conditions during growth of the initial 500 A(ring) of GaAs on Si. The improvement in film quality for low As4 overpressures is discussed in terms of the observed changes in island morphology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101698
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  • 5
    Electronic Resource
    Electronic Resource
    Perpendicular magnetization and surface magnetoelastic anisotropy in epitaxial Cu/Ni/Cu (001) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5845-5847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Ni films (2.0 nm〈h〈14 nm) have been grown on Cu/Si (001) and capped with 2.0 nm of Cu in a molecular beam epitaxy chamber. Their magnetic anisotropy has been measured ex situ in a vibrating sample magnetometer. Perpendicular magnetization is preferred over a broad Ni-thickness range: 25≤h≤140 A(ring). The quantitative anisotropy data are not well described by a model including bulk and surface magnetocrystalline anisotropy, Kb+Ksh, magnetostatic energy, and bulk magnetoelastic energy, Bbe(h). If surface magnetoelasticity Bse/h is considered, the data are well described and values for Ks and Bs consistent with Néel's model are determined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362144
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  • 6
    Electronic Resource
    Electronic Resource
    Modeling electromigration-induced stress evolution in confined metal lines (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 900-904 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for stress evolution in confined metal interconnects due to electromigration was proposed recently by M. A. Korhonen, P. Borgesen, K. N. Tu, and C.-Y. Li [J. Appl. Phys. 73, 3790 (1993)], in which interconnect failure is associated with the buildup of stress to a critical level. We show that the analytic solution for a semi-infinite line with a blocking boundary given by Korhonen et al. is a good approximation only when the stress buildup is small. This is not usually the case for narrow, encapsulated interconnect lines in which the electromigration-induced stress can be quite high prior to failure. A complete model description and a more accurate analytic solution to the differential equations describing the electromigration-induced stress buildup at a blocking boundary is presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360281
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  • 7
    Electronic Resource
    Electronic Resource
    Reaction kinetics of nickel/silicon multilayer films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 795-797 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of differential scanning calorimetry to study the temperatures and kinetics of nickel silicide formation from nickel/amorphous silicon multilayer films. When the layer thickness ratio of a multilayer film is 1:1, Ni2 Si is the only phase to form. The activation energy for this reaction is 1.5 eV and the interdiffusivity pre-exponential is found to be 6 cm−2s−1. These values are in excellent agreement with values obtained using different techniques. The temperature at which Ni2 Si formation is observed a function of layer thickness, with the thinner layers reacting at lower temperatures. This layer thickness dependence can be explained by the lower reaction times for thinner layers. Upon mechanical impact, films composed of very thin layers (〈125 A(ring)) reacted explosively at room temperature to form Ni2 Si. Explosive silicidation is presumed to occur when the rate of heat generation at the many reacting interfaces exceeds the rate of heat dissipation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99644
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  • 8
    Electronic Resource
    Electronic Resource
    Cellular and dendritic morphologies on stationary and moving liquid-solid interfaces in zone-melting recrystallization (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 685-687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well known that when Si films are radiatively heated there exists a range of incident intensities for which liquid and solid regions coexist at near uniform temperature. Based on in situ microscopic observation of solidification interface morphologies, we argue that this phenomenon is responsible, at least in part, for the morphology of the liquid-solid interface in zone-melting recrystallization. We demonstrate this effect through stationary interface experiments. It is observed that even a stationary interface exposed to a gradient in radiation intensity develops interface morphologies similar to those of moving interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98334
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy in epitaxial Ni/Cu(001) thin films: Effects of misfit strain on perpendicular magnetic anisotropy (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6430-6430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several epitaxial magnetic systems, notably Fe/Ag(001) and Fe/Cu(001), exhibit perpendicular magnetic anisotropy (PMA) over a relatively narrow thickness range, approximately 2–6 ML. Recently, it has been shown1,2 that a similar region of perpendicular anisotropy exists for Ni/Cu(001), but over a much broader range of film thicknesses extending up to approximately 40 ML. The effective anisotropy energy density can be written as Keff = −2πM2s + 2B1ε(t)+ (2KN/t), which includes magnetostatic (MS), magnetoelastic (ME), and Néel (averaged over two surfaces) terms. The effective anisotropy vanishes at the perpendicular to in-plane transition thickness of about 60 A(ring). If we assume bulk values for MS and B1, the ME coupling coefficient, and use our measured strain values ε(t), we find that the Néel term is an order of magnitude smaller than the ME and MS terms. These large competing terms therefore control the PMA in this system. We have extended our studies of PMA in Ni/Cu(001) to include Cu1−xNix (0%〈x〈50%) alloy substrates for which the misfit strain with the Ni film is reduced. We find that the perpendicular-to-in-plane transition, at t≈40 ML for Ni/Cu(001), shifts to thinner nickel layers as the misfit strain is decreased by deposition on Cu1−xNix substrates. This further confirms the important role of ME energy in PMA for this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356976
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  • 10
    Electronic Resource
    Electronic Resource
    Initial sequence and kinetics of silicide formation in cobalt/amorphous-silicon multilayer thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4287-4294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sequence of cobalt silicide phase formation in cobalt/amorphous-silicon multilayer thin films has been investigated using differential scanning calorimetry, cross-sectional transmission electron microscopy, thin film x-ray diffraction, and energy dispersive x-ray analysis in a scanning transmission electron microscope. Multilayer thin films with various overall atomic concentration ratios (2Co:1Si, 1Co:1Si, 1Co:2Si) and various bilayer thicknesses were used in this study. It was found that an amorphous intermixed layer about 10 nm thick preexisted at the as-deposited cobalt/amorphous-silicon interface. Crystalline CoSi was always the first phase to nucleate in the interdiffused layer. The CoSi nucleates and coalesces into a continuous layer at temperatures as low as about 260 °C, but does not thicken until the next phase forms. Which phase forms second is determined by whether Co and Si remain after formation of the CoSi layer. The activation energy for the initial nucleation and growth of the CoSi layer was found to be 1.6±0.1 eV. When excess cobalt is present, Co2Si is the next phase to form at about 350 °C. Co2Si grows with the coexisting CoSi layer remaining approximately a constant thickness of about 5 nm. The activation energy for growth of the Co2Si was 2.0±0.1 eV. After the cobalt is fully consumed, Co2Si reacts with excess silicon (if there is any) to form more CoSi at about 400 °C. This process has an activation energy of 1.9±0.1 eV. If excess silicon still exists after all of the Co2Si has transformed to CoSi, CoSi2 formation follows at about 500 °C with an activation energy of 2.5±0.1 eV. The activation energies of the above phase transformations were determined by analyzing calorimetric data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349106
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