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  • 1
    Electronic Resource
    Electronic Resource
    The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment−The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4820-4825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal relaxation of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition was studied by annealing the films for times up to 21/2 h at a temperature of 950 °C. Strain relaxation was determined by misfit dislocation density obtained by planar-view transmission electron microscopy and by double-crystal x-ray diffractometry. When the relaxation process requires relatively few dislocations ((approximately-less-than)2 μm), the films relax to a remnant strain which is in agreement with previous experimental measurements; however, when higher densities of misfit dislocations were generated, substantially larger remnant strains were observed. This is interpreted as resulting from energetic interactions among the dislocations and analyzed in terms of the theory developed previously. It is found that the cutoff distance for dislocation interactions is substantially greater than the film thickness and a value of 1.4±0.5 μm is determined for 75–150-nm-thick films. Limited data from the literature also indicate a cutoff distance that is substantially in excess of the film thickness. In addition, as the annealing time is increased, a marked propensity for dislocation banding is observed, attesting to the mixed nature (attractive and repulsive) of the interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350624
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1826-1831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The irreversible isothermal annealing of the as-deposited defects of hydrogenated amorphous silicon, a-Si:H, deposited at room temperature by concentric-electrode radio-frequency glow discharge is studied using dark and photoconductivity, space-charge limited current, and time-of-flight. The photoconductivity increases as a power law of the annealing time with exponent 0.8. The density of states at the Fermi level, measured by space-charge limited current, is inversely proportional to the annealing time. These results are compatible with bimolecular annealing kinetics. The dark conductivity obeys a Meyer–Nelder rule during the isothermal anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353167
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  • 3
    Electronic Resource
    Electronic Resource
    The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4814-4819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films is considered by including interaction terms in an energy minimization. Both parallel and crossing interactions are considered and energies are calculated for orthogonal arrays of equally spaced 60° misfit dislocations, and it is shown that the parallel interactions can be either attractive or repulsive. The equilibrium misfit dislocation density is shown to be a function of the "cutoff'' distance for dislocation interactions in these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350623
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3981-3989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, hydrogenated amorphous silicon (a-Si:H) is deposited at room temperature by rf glow discharge at a high deposition rate using a tubular reactor with cylindrical symmetry (concentric-electrode plasma-enhanced chemical vapor deposition, CE-PECVD). Using the novel CE-PECVD design, room-temperature deposition of a-Si:H with growth rates up to 14 A(ring) s−1, low hydrogen concentration ((approximately-less-than)10%), and the bonded hydrogen in the Si-H monohydride configuration, is achieved for the first time using an rf glow-discharge technique. The influence of the deposition parameters (silane flow rate, pressure, and power density) on the growth rate, optical band gap, and silicon-hydrogen bonding configuration, is quantitatively predicted using a deposition mechanism based on the additive contribution of three growth precursors, SiH2, SiH3, and Si2H6, with decreasing sticking coefficients of 0.7, 0.1, and 0.001, respectively. The low hydrogen concentration is due to the enhanced ion bombardment resulting from the concentric electrode design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350870
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3990-3996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High band gap, device-quality, hydrogenated amorphous silicon (a-Si:H) was deposited from silane at room temperature using concentric-electrode plasma-enhanced chemical vapor deposition (CE-PECVD). Increasing the flow of silane from 15 to 99 sccm resulted in a continuous increase of the optical band gap, Eopt, from 1.7 to 2.1 eV, and changed the dominant bonding configuration from Si-H to Si-H2. The total hydrogen concentration as determined from the integrated absorption of the SiHx stretching bond increased from 7% to 15%. As Eopt varied between 1.7 and 2.1 eV, the photoconductivity, σph, decreased from 10−5 to 10−7 Ω−1 cm−1 and the dark conductivity, σd, dropped from 10−10 to 10−14 Ω−1 cm−1 (σph and σd measured at room temperature after a 1 h anneal at 200 °C). These results are superior to those obtained using a-SiC:H alloys deposited under comparable conditions (i.e., without hydrogen dilution). After annealing, three different conduction paths were identified and correlate with the silicon-hydrogen bonding configuration. The photosensitivity of high band gap a-Si:H films, σph/σd, follows Slobodin's rule for a-SiGe:H alloys. High band gap a-Si:H deposited by CE-PECVD has significant potential to challenge the role of a-SiC:H as the choice material for films with 1.7 (approximately-less-than) Eopt (approximately-less-than) 2.1 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350871
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  • 6
    Electronic Resource
    Electronic Resource
    Direct determinations of R/S enantiomer ratios of citronellic acid and related substances by nuclear magnetic resonance spectroscopy and high pressure liquid chromatography (1976)
    s.l. : American Chemical Society
    The @journal of organic chemistry 41 (1976), S. 62-65 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00863a014
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication of three-terminal resonant tunneling devices in silicon-based material (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1699-1701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laterally gated three-terminal resonant tunneling devices have been fabricated from Si/Si1−xGex double-barrier structures grown by atmospheric pressure chemical vapor deposition. The gate is insulated from the submicrometer vertical channel by a low-temperature oxide and the entire fabrication scheme is compatible with current silicon technology. At T=77 K the resonant peak current can be modulated by 25% by applying a moderate gate voltage; at T=4.2 K, current modulation reaches 50%. We present calculations demonstrating that devices fabricated from optimized Si/Si1−xGex structures will pinch off fully at moderate gate voltages and operate at liquid nitrogen temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111838
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 787-789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution x-ray diffraction (HRXRD) is proposed as a nondestructive tool for the characterization of the silicon on insulator (SOI) film in bonded wafers. Although the bonded stack may consist of many amorphous layers, the measured diffraction spectra only show the crystalline SOI layer, thus providing a direct measurement of the film. We have demonstrated that HRXRD is capable of accurately measuring the film thickness, the tilt of the film planes with respect to the substrate planes, and the rotation misalignment of the bonded film with respect to the carrier substrate. SOI films with thicknesses down to 30 nm were readily measured with accuracy better than 1%. It is shown that an angular separation between the layer and the substrate diffraction peaks is maintained due to an unintentional miscut which usually exists in the starting wafers used for bonding. This angular separation is unique to bonded wafers as opposed to separation by implanted oxygen (SIMOX) wafers where the layer and substrate peaks are nonseparable. Calculated diffraction spectra based on the kinematic approach showed excellent agreement with the measured diffraction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124513
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  • 9
    Electronic Resource
    Electronic Resource
    Photopyroelectric detection of phase transitions in solids (1985)
    Springer
    Applied physics 38 (1985), S. 117-122 
    Details
    ISSN: 1432-0630
    Keywords: 64 ; 78
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The recently developed photopyroelectric spectroscopy (P2ES) has been used to investigate phase transitions in solids. In our variable temperature experiments, specific heat curves for Rochelle Salt and V2O4 powders were obtained and found in good agreement with results obtained previously via more experimentally involved methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620462
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  • 10
    Electronic Resource
    Electronic Resource
    Evaluating drug absorption after oral administration. Some problems and some solutions (1984)
    Springer
    European journal of clinical pharmacology 26 (1984), S. 255-259 
    Details
    ISSN: 1432-1041
    Keywords: drug absorption ; statistical moments method ; vanishing exponential ; indistinguishable macroconstants ; Wagner-Nelson method ; Lood-Riegelman method ; first order absorption kinetic
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Quantitative assessment of drug absorption remains a difficult task, because the multiple-compartment disposition of a drug may not be obvious after oral administration (the problem of the vanishing exponential) and the macroconstants are indistinguishable. For these reasons, proper analysis of the drug absorption based on the apparent behavior of oral data without intravenous reference curve rarely provides absorption information useful for in vivo — in vitro correlations. When intravenous reference curve is available, compartment model used for analysis of the oral data should be corresponding to the iv data such as the Loo-Riegelman method. The model independent statistical moments method is one of the preferable alternatives because of its ease of computation and its potentially smaller error, if absorption can be assumed to be first-order.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00630295
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