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  • 11
    Electronic Resource
    Electronic Resource
    Erratum: "The number of third-order elastic constants of an icosahedral solid'' [J. Appl. Phys. 60, 2638 (1986)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2001-2001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358540
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  • 12
    Electronic Resource
    Electronic Resource
    Magnetic properties of Dy-Lu alloys : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6592-6594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Although many binary heavy rare-earth alloy systems have been studied extensively, there has been little work reported on the Dy-Lu system. The properties of single-crystal DyxLu1−x films grown by molecular beam epitaxy are reported. SQUID magnetometer and neutron diffraction measurements on samples with x=0.4, 0.5, and 0.6 show that the samples order helimagnetically with Néel temperatures of TN=90, 105, and 120 K, respectively. The helical turn angle was mapped as a function of temperature for each of the three alloys. Magnetic x-ray scattering, the first in an alloy, was observed at the (002)± positions at 15 and 60 K in the x=0.4 sample using resonant exchange scattering of synchrotron radiation at the Dy LIII edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356905
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  • 13
    Electronic Resource
    Electronic Resource
    Influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1482-1484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic study of the ballistic electron contribution to the current-voltage (I-V) characteristics of vertically integrated resonant tunneling diodes (RTDs) separated by doped spacer layers (Wsp). A magnetic field (B) transverse to the tunneling direction was used to tune the electron's longitudinal energy. The results confirm the isolated circuit element picture of the Wsp=1000 A(ring) sample and the strongly coupled description of the 0 A(ring) sample. This work shows that even for some nominally isolated RTDs (in this work for Wsp= 400 and 500 A(ring)), the I-V characteristics can undergo striking B-induced changes. This effect is due to resonant charge buildup in the well of the collector RTD from the relatively weak ballistic component of the current traversing the doped spacer region. A simple model that includes a calculation of the conduction-band profile and quantum well energy levels under bias gives good agreement with the data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105203
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  • 14
    Electronic Resource
    Electronic Resource
    Diffusivity of gold in amorphous silicon measured by the artificial multilayer technique (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Artificial multilayers of amorphous Si and amorphous Si containing 0.7 at. % Au, with repeat lengths between 44 and 48A, were fabricated by ion beam sputtering. The change, with annealing time in the intensity of the first-order x-ray diffraction peak resulting from the composition modulation, is used to determine the diffusivity of Au in amorphous Si. Diffusion lengths on the order of an interatomic distance have been measured. The diffusivities over the temperature range 200–260 °C have an Arrhenius-type temperature dependence with an activation enthalpy of about 1.3 eV, and are in agreement with the extrapolation of published higher temperature data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102983
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  • 15
    Electronic Resource
    Electronic Resource
    Elastic scattering centers in resonant tunneling diodes (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 201-203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of impurities placed in the wells of double-barrier resonant tunneling diodes on the current-voltage characteristics was experimentally determined. Four different double-barrier structures were grown by molecular beam epitaxy with n-type, p-type, undoped, and highly compensated doping in the center of the well. Resonant tunneling devices of various sizes were fabricated, and measured at 77 K. Systematic shifts in the peak position and peak to valley ratios were observed for the different dopant profiles. The shifts in peak position are correctly predicted by a ballistic model which includes the effects of band bending due to ionized impurities in the well. The doped devices showed a systematic decrease in the peak to valley ratio which is not predicted by the ballistic model. By scaling our results, it is apparent that in most cases unintentional background impurities are not sufficient to significantly degrade the current-voltage characteristics of resonant tunneling diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100147
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  • 16
    Electronic Resource
    Electronic Resource
    Variation of the spacer layer between two resonant tunneling diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1871-1873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of changing the length of the spacer layer between two vertically integrated resonant tunneling diodes (RTDs) is experimentally determined. Three different wafers, each containing two RTDs, were grown by molecular beam epitaxy, with spacer layers of 1200, 700, and 200 A(ring), respectively. A fourth wafer with a single such RTD was grown as a control sample. Two of the control samples wired in series show two current peaks, the temperature dependence of the current-voltage (I-V) curves being correctly predicted by a nonlinear load model. The I-V characteristics of the stacked devices with 1200 and 700 A(ring) quantum wells between the RTDs also show two current peaks, confirming that the bulk of electrons lose longitudinal wave function coherence between the two double-barrier structures. The first derivative of the I-V curve for the samples with 700 and 1200 A(ring) spacers displays evidence of quantum interference between the cathode well and the central spacer as a second-order effect. The first major peak in the structure with a 200 A(ring) spacer between the quantum wells differs from the first peak in the other structures, and the difference is attributed to quantum interference effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102157
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  • 17
    Electronic Resource
    Electronic Resource
    The number of third-order elastic constants of an icosahedral solid (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2638-2638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An icosahedral solid has 20 nonzero third-order elastic constants, four of which are independent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337086
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  • 18
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2833-2835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (001) at room temperature on hydrogen-terminated Si (001). In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5–20 nm of Cu film growth. Post-growth x-ray diffraction indicates the Cu film has a mosaic spread of (001) textures of about ±2° and that a small fraction (0.001–0.01) is of (111) textures. High-resolution transmission electron microscopy shows an abrupt Cu/Si interface with no interfacial silicide, and reveals an evolution in texture with Cu thickness so as to reduce the mosaic spread about (001). Moiré contrast suggests a nearly periodic elastic strain field extending into the Cu and Si at the interface. Other aspects of film growth which are critical to epitaxy are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110302
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  • 19
    Electronic Resource
    Electronic Resource
    Manipulation of the Ti/Si reaction paths by introducing an amorphous Ge interlayer (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 561-563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evolution of the Ti/a-Ge/Si trilayer reactions has been investigated using transmission electron microscopy and Auger electron spectroscopy. Instead of amorphous phase formation, as usually observed in the Ti/Si bilayer reaction, the crystalline Ti6Ge5 is the first phase observed during the reaction. Preceding the equilibrium C54-Ti(Si,Ge)2, a substitutional solid solution type C49-Ti(Si,Ge)2 forms upon annealing at 550–600 °C, regardless of the replacement of amorphous phase by the crystalline phase. The C49-to-C54 polymorphic transformation occurs at ∼650 °C. The reaction path is also correlated with the change in film resistance obtained from a four-point sheet resistance measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113019
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  • 20
    Electronic Resource
    Electronic Resource
    Different fatigue behaviors of SrBi2Ta2O9 and Bi3TiTaO9 films: Role of perovskite layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2644-2646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the role of the perovskite layers on fatigue behaviors, SrBi2Ta2O9(SBT) and Bi3TiTaO9 (BTT) films were prepared by pulsed laser deposition using 15% Bi-excess bulk targets. The SBT and the BTT films grown at the similar deposition conditions showed similar growth behaviors, electrical properties, and retention characteristics. However, these films showed very different fatigue behaviors. The difference should come from the oxygen stability in the perovskite layer. Our work demonstrates that oxygen stability of the perovskite layers, as well as the self-regulating adjustment of the Bi2O2 layers, should be considered in the search for new candidate materials for nonvolatile ferroelectric memory devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125105
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