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  • 1
    Electronic Resource
    Electronic Resource
    Imperfections in Crystals. (1961)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 83 (1961), S. 1521-1522 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01467a067
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  • 2
    Electronic Resource
    Electronic Resource
    Remanent Magnetization of Ancient Bricks (1958)
    [s.l.] : Nature Publishing Group
    Nature 181 (1958), S. 404-404 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The conclusions based on the magnetization of ancient bricks have presupposed that this magnetization is proportional to the intensity of the Earth's magnetic field at the time the bricks received their original firing, provided that no high-temperature firings have intervened. In the procedure of ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/181404a0
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  • 3
    Electronic Resource
    Electronic Resource
    In situ magnetic and structural analysis of epitaxial Ni80Fe20 thin films for spin-valve heterostructures : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6516-6518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated structural and magnetic properties of epitaxial (100) Ni80Fe20 films grown on relaxed Cu/Si(100) seed layers. The crystallographic texture and orientation of these films was analyzed in situ by reflection high energy electron diffraction (RHEED), and ex situ by x-ray diffraction and cross-sectional transmission electron microscopy (XTEM). In particular, RHEED intensities were recorded during epitaxial growth, and intensity profiles across Bragg rods were used to calculate the surface lattice constant, and hence the film strain. XTEM analysis indicated that the epitaxial films had atomically abrupt interfaces. The magnetic properties of these epitaxial films were measured in situ using magneto-optic Kerr effect magnetometry. Large Hc (10–20 Oe) was observed for epitaxial Ni80Fe20 (100) films less than 10.0 nm thick whereas for larger thicknesses, Hc decreased to a few Oe with the appearance of a uniaxial anisotropy. Correlations were made between magnetic properties of these epitaxial films and the strain in the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356933
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  • 4
    Electronic Resource
    Electronic Resource
    Evolution of structural and magnetic properties in Ta/Ni81Fe19 multilayer thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 458-464 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion kinetics in short period (12.8 nm) Ta/Ni81Fe19 polycrystalline multilayer films has been investigated and related to the evolution of soft magnetic properties upon thermal annealing in the temperature range 300–600 °C. Small angle x-ray diffraction and transmission electron microscopy were used to estimate the multilayer period. Interdiffusion in the multilayers was directly computed from the decay of the satellites near (000) in a small angle x-ray diffraction spectrum. A kinetic analysis of interdiffusion suggests that grain growth is concurrent with grain boundary diffusion of Ta in Ni81Fe19. The evolution of soft magnetic properties of Ni81Fe19, i.e., lowering of 4πMs and increase in coercivity Hc, also lend support to the above analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355252
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  • 5
    Electronic Resource
    Electronic Resource
    Charging of single Si nanocrystals by atomic force microscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3133-3135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conducting-tip atomic force microscopy (AFM) has been used to electronically probe silicon nanocrystals on an insulating substrate. The nanocrystal samples were produced by aerosol techniques and size classified; nanocrystal size can be controlled in the size range of 2–50 nm with a size variation of less than 10%. Using a conducting tip, the charge was injected directly into the nanocrystals, and the subsequent dissipation of the charge was monitored. Estimates of the injected charge can be made by comparison of the data with an intermittent contact mode model of the AFM response to the electrostatic force produced by the stored charge. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371783
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  • 6
    Electronic Resource
    Electronic Resource
    In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2653-2655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-time measurements of GexSi1−x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy. Parallel detection enables quantitative acquisition of low-loss spectra in a time of 〈500 μs and surface composition determination in GexSi1−x/Si(001) via Ge L2,3 core loss analysis to a precision of approximately 2% in time of order 1 s. Segregation and trapping kinetics of monolayer thickness Sn films during Si epitaxy on Sn-covered Si(100) has also been studied using the Sn M4,5 core loss. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120136
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2833-2835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (001) at room temperature on hydrogen-terminated Si (001). In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5–20 nm of Cu film growth. Post-growth x-ray diffraction indicates the Cu film has a mosaic spread of (001) textures of about ±2° and that a small fraction (0.001–0.01) is of (111) textures. High-resolution transmission electron microscopy shows an abrupt Cu/Si interface with no interfacial silicide, and reveals an evolution in texture with Cu thickness so as to reduce the mosaic spread about (001). Moiré contrast suggests a nearly periodic elastic strain field extending into the Cu and Si at the interface. Other aspects of film growth which are critical to epitaxy are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110302
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  • 8
    Electronic Resource
    Electronic Resource
    Strain modification in coherent Ge and SixGe1−x epitaxial films by ion-assisted molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2305-2307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed large changes in Ge and SixGe1−x layer strain during concurrent molecular beam epitaxial growth and low-energy bombardment. Layers are uniformly strained, coherent with the substrate, and contain no dislocations, suggesting that misfit strain is accommodated by free volume changes associated with injection of ion bombardment induced point defects. The dependence of layer strain on ion energy, ion-atom flux ratio, and temperature is consistent with the presence of a uniform dispersion of point defects at high concentration. Implications for distinguishing ion-surface interactions from ion-bulk interactions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103877
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  • 9
    Electronic Resource
    Electronic Resource
    Transformation to Rotating Coordinates (1970)
    [s.l.] : Nature Publishing Group
    Nature 228 (1970), S. 272-273 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The first approach leads to a "paradox" initially cited by Ehrenfest1. In this viewpoint, illustrated by the model of the rotating disk, distances in the radial direction are assumed to be unaffected by the rotary motion, for these are everywhere orthogonal to the direction of motion. Measuring ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/228272a0
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  • 10
    Electronic Resource
    Electronic Resource
    Post-irradiation changes in photolytically generated free radicals in methyl methacrylate (1969)
    New York : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Letters 7 (1969), S. 477-481 
    Details
    ISSN: 0449-2986
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pol.1969.110070701
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