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  • 1
    Electronic Resource
    Electronic Resource
    Lanthanum-substituted bismuth titanate for use in non-volatile memories (1999)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 401 (1999), S. 682-684 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Non-volatile memory devices are so named because they retain information when power is interrupted; thus they are important computer components. In this context, there has been considerable recent interest in developing non-volatile memories that use ferroelectric thin ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/44352
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  • 2
    Electronic Resource
    Electronic Resource
    Leakage current behaviors in rapid thermal annealed Bi4Ti3O12 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1525-1527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi4Ti3O12 thin films have been grown on indium-tin-oxide coated glass by pulsed laser deposition. Films are rapidly thermal annealed at 650 °C in three kinds of atmospheres such as O2, N2, and air. The annealing atmosphere is found to be an important growth parameter which determines the crystallization, microstructures, and the leakage current behaviors. The film annealed in oxygen has a columnar grain structure with an amorphous phase, and its leakage current behavior is in agreement with the prediction of the space-charge-limited conduction model. The film annealed in nitrogen has polycrystalline porous structure, and its high field conduction is well explained by the thermoionic emission model, called the Poole–Frenkel emission. On the other hand, the film annealed in air has both the columnar and porous structures, and its electrical behavior shows characteristics of both models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112032
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth and magnetoresistance of La1−xCaxMnO3−δ thin films on MgO(001) substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6151-6156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Perovskite La1−xCaxMnO3−δ thin films were deposited on MgO(001) substrates using pulsed laser deposition. Effects of deposition conditions, such as laser fluence, substrate temperature, and oxygen pressure, on growth behaviors of the films were investigated over a wide range. Epitaxial La0.7Ca0.3MnO3−δ /MgO thin films were able to be grown in situ under conditions such as 1.5–2.1 J/cm2 laser fluence, 650–750 °C substrate temperature, and 100–300 mTorr oxygen pressure. The oxygen pressure during the deposition is found to be closely related to crystalline orientations of the films. Rutherford backscattering spectroscopy measurements show that the epitaxial La1−xCaxMnO3−δ thin films have compositions similar to those of targets, demonstrating that pulsed laser deposition is a useful technique to get thin films with complicated chemical compositions. The magnetoresistance, −ΔR(6T)/R(0), of the La0.7Ca0.3MnO3−δ /MgO thin film was about −80%, which is smaller than the reported values (i.e., ∼−99.92%) of the La–Ca–Mn–O thin films on LaAlO3 substrates [S. Jin, T. H. Tiefel, M. McCormack, R. A. Fastnacht, R. Ramesh, and L. H. Chen, Science 264, 413 (1994)]. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360687
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  • 4
    Electronic Resource
    Electronic Resource
    Application of a bridge circuit for an inductive critical current density measurement of superconducting thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2385-2386 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recently, a new contactless Jc measurement technique by monitoring nonlinear responses from a coil mounted in the proximity of a superconducting film was reported by Classen et al. [Rev. Sci. Instrum. 62, 996 (1991)]. An improved method to measure the nonlinear inductive response is developed using an inductance bridge circuit, which discriminates the third-harmonic signal due to the nonlinearity from those of other origins. Moreover, in this technique, the phase of the third-harmonic signal can be used to determine the critical current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143941
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  • 5
    Electronic Resource
    Electronic Resource
    Interface chemistry and electrical properties of SrVO3/LaAlO3 heterostructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7056-7059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrVO3 films were grown by laser molecular beam epitaxy on LaAlO3 substrates. For a 10-nm-thick film, its resistivity could be reduced by a factor of 4 by inserting a single La–O atomic layer on an oxygen-annealed LaAlO3 substrate. X-ray diffraction and x-ray photoelectron spectroscopy measurements revealed that oxygen defect concentrations could be varied significantly by controlling the substrate terminations, i.e., interface chemistry. It was suggested that the interface chemistry could influence formation of extended defects and result in changes in electrical properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326896
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  • 6
    Electronic Resource
    Electronic Resource
    Mechanism of low temperature hydrogen-annealing-induced degradation in Pb(Zr0.4Ti0.6)O3 capacitors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 697-699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in the polarization–field hysteresis loop were systematically investigated for Pb(Zr0.4Ti0.6)O3 capacitors after forming gas annealing at 200 °C. Voltage shift in hysteresis was strongly dependent on the polarization states and ascribed to an asymmetric distribution of defect charges and pinned defect dipoles. Field recovery of the imprinted capacitors and increase in coercive field after the recovery were discussed in conjunction with reversible defect dipoles. From the relaxation of the voltage shift with an activation energy of 0.21 eV, it is inferred that charge trapping may be the main cause of the voltage shift and the subsequent degradation of the capacitors by pinning the polarization and defect dipoles. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492006
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  • 7
    Electronic Resource
    Electronic Resource
    Different fatigue behaviors of SrBi2Ta2O9 and Bi3TiTaO9 films: Role of perovskite layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2644-2646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the role of the perovskite layers on fatigue behaviors, SrBi2Ta2O9(SBT) and Bi3TiTaO9 (BTT) films were prepared by pulsed laser deposition using 15% Bi-excess bulk targets. The SBT and the BTT films grown at the similar deposition conditions showed similar growth behaviors, electrical properties, and retention characteristics. However, these films showed very different fatigue behaviors. The difference should come from the oxygen stability in the perovskite layer. Our work demonstrates that oxygen stability of the perovskite layers, as well as the self-regulating adjustment of the Bi2O2 layers, should be considered in the search for new candidate materials for nonvolatile ferroelectric memory devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125105
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  • 8
    Electronic Resource
    Electronic Resource
    Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1907-1909 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy measurements were executed to compare the nature of defects in SrBi2Ta2O9 (SBT) and Bi4Ti3O12 (BTO) films. In the SBT film, it was found that the oxygen ions at the metal–oxygen octahedra were much more stable than those at the Bi2O2 layers. On the other hand, for the BTO film, oxygen vacancies could be induced both at the titanium–oxygen octahedra and at the Bi2O2 layers. We suggested that the difference in stability of the metal–oxygen octahedra should be related to different fatigue behaviors of the SBT and the BTO films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123709
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1155-1157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition. By adjusting the laser fluence, we could successfully control remnant polarization of the films. In a narrow fluence range of 1.0–1.5 J/cm2, films with large remnant polarizations (as high as 18.7 μC/cm2) could be obtained. The choice of an optimal laser fluence was found to be very important to control electrical properties of the films. From electron-probe microanalysis, it was demonstrated that the Bi content is closely related with the remnant polarization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124627
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  • 10
    Electronic Resource
    Electronic Resource
    Roles of the first atomic layers in growth of SrTiO3 films on LaAlO3 substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2176-2178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth behaviors of SrTiO3/LaAlO3 films could be varied substantially by controlling terminating atomic layers of the substrates. In a film on the LaO-terminated substrate, strain-induced roughening was observed. In a film on the AlO2-terminated substrate, the first atomic layer of the interface seemed to have lots of defects. However, the stress became quickly relaxed, so a SrTiO3 film could be grown in a layer-by-layer mode after a few monolayers. All these observations could be explained in terms of chemical matching between the atomic layers at the interface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123792
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