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  • 11
    Publication Date: 2015-12-23
    Description: Author(s): Sang Wook Han, Won Seok Yun, J. D. Lee, Y. H. Hwang, J. Baik, H. J. Shin, Wang G. Lee, Young S. Park, and Kwang S. Kim We report that the hydrogenation of a single crystal 2 H − MoS 2 induces a novel-intermediate phase between 2H and 1T phases on its surface, i.e., the large-area, uniform, robust, and surface array of atomic stripes through the intralayer atomic-plane gliding. The total energy calculations confirm that … [Phys. Rev. B 92, 241303(R)] Published Tue Dec 22, 2015
    Keywords: Semiconductors II: surfaces, interfaces, microstructures, and related topics
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
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  • 12
    Publication Date: 2016-06-01
    Description: Motivation: Identification of altered pathways that are clinically relevant across human cancers is a key challenge in cancer genomics. Precise identification and understanding of these altered pathways may provide novel insights into patient stratification, therapeutic strategies and the development of new drugs. However, a challenge remains in accurately identifying pathways altered by somatic mutations across human cancers, due to the diverse mutation spectrum. We developed an innovative approach to integrate somatic mutation data with gene networks and pathways, in order to identify pathways altered by somatic mutations across cancers. Results: We applied our approach to The Cancer Genome Atlas (TCGA) dataset of somatic mutations in 4790 cancer patients with 19 different types of tumors. Our analysis identified cancer-type-specific altered pathways enriched with known cancer-relevant genes and targets of currently available drugs. To investigate the clinical significance of these altered pathways, we performed consensus clustering for patient stratification using member genes in the altered pathways coupled with gene expression datasets from 4870 patients from TCGA, and multiple independent cohorts confirmed that the altered pathways could be used to stratify patients into subgroups with significantly different clinical outcomes. Of particular significance, certain patient subpopulations with poor prognosis were identified because they had specific altered pathways for which there are available targeted therapies. These findings could be used to tailor and intensify therapy in these patients, for whom current therapy is suboptimal. Availability and implementation: The code is available at: http://www.taehyunlab.org . Contact: jhcheong@yuhs.ac or taehyun.hwang@utsouthwestern.edu or taehyun.cs@gmail.com Supplementary information: Supplementary data are available at Bioinformatics online.
    Print ISSN: 1367-4803
    Electronic ISSN: 1460-2059
    Topics: Biology , Computer Science , Medicine
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  • 13
    Publication Date: 2016-09-16
    Description: Fabrication of phase-change memory devices at modest or ambient temperatures leads to nanoscale compositional variations in phase-transition layers, where amorphous-polycrystalline phase change takes place via electrical switching, and can alter the device's performances. Here, by transmission electron microscopy and atom probe tomography, we address that thermal annealing at 400 °C for 20 min induces an elemental interdiffusion in the devices consisting of TiN (top electrode), carbon-doped GeSbTe (phase-transition layer), and TiSiN (bottom heater). With respect to the employed annealing process, the Ge atoms of GeSbTe layer have diffused into TiSiN layer at a given sample volume, while the Ti atoms of TiSiN layer into GeSbTe layer. Furthermore, non-random nature of dopant distribution in the GeSbTe materials leads to a Ti-localization including dopants at the GeSbTe/TiSiN interfaces. Our findings have two important implications: First, the annealing-driven interdiffusion of Ge and Ti is a predominant mechanism responsible for nanoscale compositional variations in GeSbTe layer; second, such an interdiffusion and the resultant dopant localization play a crucial role on the driving force for amorphous-polycrystalline transition of GeSbTe-based memory devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 14
    Publication Date: 2011-06-08
    Description: Emerging evidence indicates that NADPH oxidase (NOX) and its reactive oxygen species (ROS) products modulate a variety of cellular events, including proliferation, differentiation, and apoptosis. In this study, we investigated the functions of NOX2 and ROS in immune modulation using NOX2 knockout (KO) mice. Interestingly, NOX2 KO mice spontaneously developed arthritis with onset at 6–7 wk of age and high incidence (60%) at 15–18 wk of age. Arthritis severity in NOX2 KO mice was proportionally increased with age and higher in females than in males. Bone destruction was confirmed by microcomputed tomography scanning and histological analyses of joints. Inflammatory factors, including TNF-α, IL-1β, and RANKL, and serum level of anti–type II collagen IgG were significantly increased in NOX2 KO mice. In addition, NOX2 deficiency perturbed the immune system upon aging. NOX2 KO mice demonstrated preferred development of CD11b+Gr-1+ myeloid cells with profound production of proinflammatory cytokines and augmented expression of IL-17 through the activation of STAT3 and RORγt in vivo. NOX2 deficiency increased differentiation of effector Th cells in vitro and decreased CD25+FoxP3+ Treg cells both in vitro and in vivo. Furthermore, adoptive transfer of NOX2-deficient CD4+ T cells into RAG KO mice increased arthritic inflammation compared with WT cells. These results demonstrated that NOX2 deficiency affected the development of CD11b+ myeloid cells and Th17/Treg cells, and thus promoted inflammatory cytokine production and inflammatory arthritis development, strongly supporting a crucial role for ROS generation in the modulation of Th17/Treg cell development and its related inflammatory immune response upon aging.
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 15
    Publication Date: 2011-06-21
    Description: Author(s): J. D. Watson, S. Mondal, G. A. Csáthy, M. J. Manfra, E. H. Hwang, S. Das Sarma, L. N. Pfeiffer, and K. W. West We report on a systematic study of the density dependence of mobility in a low-density carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T =50 mK, a mobility of 2.6 × 10 6 cm 2 /Vs at a density p =6.2×10 10 cm -2 was measured. This is the highest mobility reported for a 2DHS to date. Using a b... [Phys. Rev. B 83, 241305] Published Mon Jun 20, 2011
    Keywords: Semiconductors II: surfaces, interfaces, microstructures, and related topics
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
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  • 16
    Publication Date: 2011-05-21
    Description: Author(s): S. Das Sarma, Shaffique Adam, E. H. Hwang, and Enrico Rossi A broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature-dependent carrier transport in doped or gated graphene structures is provided. A salient feature of this review is a critical comparison between carrier transport in graphene ... [Rev. Mod. Phys. 83, 407] Published Mon May 16, 2011
    Keywords: Condensed matter
    Print ISSN: 0034-6861
    Electronic ISSN: 1539-0756
    Topics: Physics
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  • 17
    Publication Date: 2015-06-10
    Description: In order to obtain reliable multilevel cell (MLC) characteristics, resistance controllability between the different resistance levels is required especially in resistive random access memory (RRAM), which is prone to resistance variability mainly due to its intrinsic random nature of defect generation and filament formation. In this study, we have thoroughly investigated the multilevel resistance variability in a TaO x -based nanoscale (
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 18
    Publication Date: 2015-01-16
    Description: Author(s): S. Das Sarma, E. H. Hwang, and Hongki Min A theory is developed for the density and temperature-dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g., dopant ions and unintentional background impurities). The theor... [Phys. Rev. B 91, 035201] Published Thu Jan 15, 2015
    Keywords: Semiconductors I: bulk
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
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  • 19
    Publication Date: 2015-07-15
    Description: The nascent stages of speciation start with the emergence of sexual isolation. Understanding the influence of reproductive barriers in this evolutionary process is an ongoing effort. We present a study of Drosophila melanogaster admixed populations from the southeast United States and the Caribbean islands known to be a secondary contact zone of European- and African-derived populations undergoing incipient sexual isolation. The existence of premating reproductive barriers has been previously established, but these types of barriers are not the only source shaping sexual isolation. To assess the influence of postmating barriers, we investigated putative postmating barriers of female remating and egg-laying behavior, as well as hatchability of eggs laid and female longevity after mating. In the central region of our putative hybrid zone of American and Caribbean populations, we observed lower hatchability of eggs laid accompanied by increased resistance to harm after mating to less-related males. These results illustrate that postmating reproductive barriers act alongside premating barriers and genetic admixture such as hybrid incompatibilities and influence early phases of sexual isolation. We present here a phenotypic study examining the effects of genetically admixed populations on postmating postzygotic reproductive barriers. We have undertaken the task of characterizing several examples of postmating/postzygotic reproductive barriers influence in a genetically admixed system experiencing incipient sexual isolation. We illustrate that postmating isolation is concurrently acting with premating isolation influencing the beginning stages of gene flow reduction and relate our findings to genetic admixture.
    Electronic ISSN: 2045-7758
    Topics: Biology
    Published by Wiley
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  • 20
    Publication Date: 2015-07-15
    Description: Author(s): Binhui Hu, M. M. Yazdanpanah, B. E. Kane, E. H. Hwang, and S. Das Sarma We report experiment and theory on an ambipolar gate-controlled Si(111)-vacuum field effect transistor where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate v… [Phys. Rev. Lett. 115, 036801] Published Mon Jul 13, 2015
    Keywords: Condensed Matter: Electronic Properties, etc.
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
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