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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2649-2656 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for sampling negative ions in hollow-cathode and hollow-anode discharges of strongly electronegative gases is presented. The negative ions were mass analyzed to be Cl−, Cl−2, and Cl−3 for the discharge of Cl2/N2 mixture and Cl− for HCl/N2. The dependence of negative ion intensity on gas pressure and discharge voltage was investigated. Photodetachment of negative ions was used to induce photoelectron transient signals that probe ion concentrations. The transient signal indicates that negative ions originate in discharge, but not in the mass-analyzer region. Time dependence of the negative ion signal induced by laser irradiation was measured by a quadrupole mass analyzer and used to study the kinetics of charged particles responsible for the transport of laser-induced perturbation. The observed negative ion transient signal is a useful means for studying negative ion kinetics in plasma.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 88 (1966), S. 5685-5686 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1014-1022 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-zero current-voltage characteristics and time-dependent current behavior of metal-ferroelectric-metal (Pt-PZT-Pt) capacitor structures have been studied. Under constant-voltage stressing, the current density through the 1500-A(ring)-thick lead-zirconate-titanate (PZT) film exhibits a power-law dependence on time, with the exponent (∼0.33) independent of temperature and voltage. Electrode material dependence of current density indicates that the conventional model of trap-limited single-carrier injection over nonblocking contacts is inadequate to explain the time-zero current. A change in top electrode material from Pt to In leads to the observation of work-function-driven Schottky contacts between the metal and ferroelectric. The current-voltage characteristics fit a two-carrier injection metal-semiconductor-metal model incorporating blocking contacts, with distinct low- and high-current regimes (PZT is assumed to be p-type and trap-free in this model). Temperature-dependent I-V measurements indicate a Pt-PZT barrier height of 0.6 eV and an acceptor doping level of ∼1018 cm−3 in PZT. The implications of this model on the optimization of ferroelectric capacitors for dynamic random access memory applications are discussed.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 442-445 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of In0.52(AlxGa1−x)0.48As epilayers with various x values were systematically studied using variable angle spectroscopic ellipsometry in the wavelength range of 310–1700 nm. The refractive indexes were determined and could be given as n(x)=0.12x2–0.51x+3.6 at the wavelength of 1.55 μm. The measured thickness of the epilayers agrees within 5.2% of the nominal thickness. The energies and broadening parameters of the E1 and E1+Δ1 transitions as a function of Al composition were also examined based on the second-derivative spectra of the dielectric function. The comparison between the results and the reported data is presented. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 843-847 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co100−xNix (x=70, 75, 80, 90 at. % Ni) alloy films were made by the vapor deposition method. An easy axis could be defined by a deposition field parallel to either the length (L film) or width (T film) of the sample. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) hysteresis loops were simultaneously measured with a slowly sweeping field H. The angle θ between the hard axis and H could be varied. Domain patterns were also recorded at each stage of the magnetization or demagnetization process. Besides the usual AMR and PHE behaviors, we have observed the forms of a voltage "mountain," like ΔVmr and ΔVph, superimposed on the normal curves at the switching field Hsw. ΔVmr is an even function of θ and ΔVph is an odd function. The well known magneto-transport theory based on the single-domain model is modified to adopt the real situation of the multidomain structure. We have been successful in explaining all the ΔVph data observed experimentally. In addition, from the angular dependence of ΔVph, we not only check the direction of the mean easy axis consistently, but also tell the degree of easy-axis dispersion in the film. It is found that the Co30Ni70 T film has the least dispersion and a sizable AMR ratio Δρ/ρ⊥=3.6% at room temperature.© 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2036-2038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial [Co/Cu]10 grown on Si (001) has been irradiated by 1 MeV C+ with a dose of 1×1016/cm2. The intrinsic characteristics of epitaxy, such as crystal structure and fourfold magnetic anisotropy, are conserved after ion irradiation. However, the extrinsic magnetic properties are changed such that the coercivity decreases and the squareness of the hysteresis loop is noticeably improved. The intensity of the Cu (200) peak in the x-ray diffraction pattern increases about three times and its half-width decreases after irradiation. It is concluded that the changes of magnetic properties induced by ion irradiation result from the grain growth and the improved crystalline quality. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5464-5468 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and transmission electron microscopy have been used to study strained InxGa1−xAs/GaAs (x=0.24–0.28) quantum wells (QWs) grown by molecular-beam epitaxy. The three QWs grown without growth interruptions produce high intensity PL peaks of narrow full width at half-maximum (2.9 meV). On the other hand, the PL peaks in the QWs grown with 30-s interruptions are relatively broad, less symmetric, and show lower PL intensities, compared with the noninterrupted QWs. Our results show that high-quality strained InxGa1−xAs/GaAs QWs can be grown without growth interruptions.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1126-1128 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the dielectric breakdown characteristics of thermal oxides and N2O-based oxynitrides have been studied. A direct correlation was found between dielectric breakdown and the hole current generated within the gate dielectrics. The dependence of dielectric breakdown on oxide thickness was also studied. It was found that both charge-to-breakdown and hole-fluence-to-breakdown for the N2O oxynitrides were higher than those for the thermal oxides throughout the thickness range studied (33–87 A(ring)). The results suggest that N2O oxynitrides can sustain more damage before breakdown and thus have superior dielectric integrity compared to the thermal oxides. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 502-504 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electrical properties of a high dielectric constant (high-k) material, ZrO2, deposited directly on SiGe, without the use of a Si buffer layer or a passivation barrier. ZrO2 thin films of equivalent oxide thickness (EOT) down to 16.5 Å were deposited on strained SiGe layers by reactive sputtering. Results indicate that ZrO2 films on SiGe have good interfacial properties and low leakage currents. Sintering in forming gas at 350 °C for 1 h could further improve the film quality. Although threshold voltage stability and dielectric dispersion become a concern for thick ZrO2 films, thin ZrO2 films of EOT less than 20 Å exhibit excellent electrical properties making them a good candidate for SiGe applications. © 2000 American Institute of Physics.
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