Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 502-504
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the electrical properties of a high dielectric constant (high-k) material, ZrO2, deposited directly on SiGe, without the use of a Si buffer layer or a passivation barrier. ZrO2 thin films of equivalent oxide thickness (EOT) down to 16.5 Å were deposited on strained SiGe layers by reactive sputtering. Results indicate that ZrO2 films on SiGe have good interfacial properties and low leakage currents. Sintering in forming gas at 350 °C for 1 h could further improve the film quality. Although threshold voltage stability and dielectric dispersion become a concern for thick ZrO2 films, thin ZrO2 films of EOT less than 20 Å exhibit excellent electrical properties making them a good candidate for SiGe applications. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125801
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