ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    A four-site model for elongated liquid crystal molecules (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 6943-6949 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Molecular dynamics simulation is performed for linear liquid crystal molecules using a four-site model. The model consists of four Lennard-Jones centers which are bonded together via central potentials in a shish-kebab shape. When the molecules are left under their own vapor pressure, they exhibit isotropic and smectic B phases with no intervening nematic phase. A wall consisting of frozen Lennard-Jones centers is shown to anchor the molecules and to widen the range of the smectic regime. This demonstrates that the model can be used for molecular dynamics studies on liquid crystals in various polymer matrices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311592
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Modification of magnetic properties of epitaxial Co/Cu multilayers by 1 MeV C+ irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2036-2038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial [Co/Cu]10 grown on Si (001) has been irradiated by 1 MeV C+ with a dose of 1×1016/cm2. The intrinsic characteristics of epitaxy, such as crystal structure and fourfold magnetic anisotropy, are conserved after ion irradiation. However, the extrinsic magnetic properties are changed such that the coercivity decreases and the squareness of the hysteresis loop is noticeably improved. The intensity of the Cu (200) peak in the x-ray diffraction pattern increases about three times and its half-width decreases after irradiation. It is concluded that the changes of magnetic properties induced by ion irradiation result from the grain growth and the improved crystalline quality. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384483
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Anomalous diffusion in random pores (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 2265-2268 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Molecular dynamics simulations are performed for binary liquids confined in the pores of Vycor glass. The individual molecular motions are studied by computing Fs, the self-part of the concentration fluctuation autocorrelation function. The results for Fs(q,t) show that the diffusion is anomalous as its relaxation rate does not follow the usual q2 dependence on the probing wave vector q. This is explained as a confining effect of the glass walls. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475654
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Diffusion in random pores (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 8742-8747 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We recently reported the results of molecular dynamics simulations for a binary liquid mixture in porous glass. The results for the concentration-fluctuation autocorrelation function showed that the mutual diffusion and the self-diffusion are different. Unfortunately, the linear size of the three-dimensional system used for this simulation was rather small. We carry out the same simulations here using a relatively large two-dimensional system. The results are the same as those for the small three-dimensional system. The self-diffusion departs from the q2 Fick's pattern while the mutual diffusion follows it more closely. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478781
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Relaxation in random pores (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 3304-3307 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: To study the dynamics of a binary liquid mixture in glass pores we have performed a molecular dynamics simulation and measured the concentration fluctuation autocorrelation function Fm(q,t) and several other dynamic functions. The relaxation pattern of Fm may be described with an exponentially decaying diffusion term and a logarithmically decaying activation term. Although the system is at a very high temperature in the one-phase region, the results for the velocity autocorrelation functions and the mean-square displacement functions are deceptively similar to those of the bulk when the bulk is in its two-phase region. We discuss what this may mean when the pore size is very large. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476926
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Study of the optical properties of In0.52(AlxGa1−x)0.48As by variable angle spectroscopic ellipsometry (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 442-445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of In0.52(AlxGa1−x)0.48As epilayers with various x values were systematically studied using variable angle spectroscopic ellipsometry in the wavelength range of 310–1700 nm. The refractive indexes were determined and could be given as n(x)=0.12x2–0.51x+3.6 at the wavelength of 1.55 μm. The measured thickness of the epilayers agrees within 5.2% of the nominal thickness. The energies and broadening parameters of the E1 and E1+Δ1 transitions as a function of Al composition were also examined based on the second-derivative spectra of the dielectric function. The comparison between the results and the reported data is presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360624
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    A model for electrical conduction in metal-ferroelectric-metal thin-film capacitors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1014-1022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-zero current-voltage characteristics and time-dependent current behavior of metal-ferroelectric-metal (Pt-PZT-Pt) capacitor structures have been studied. Under constant-voltage stressing, the current density through the 1500-A(ring)-thick lead-zirconate-titanate (PZT) film exhibits a power-law dependence on time, with the exponent (∼0.33) independent of temperature and voltage. Electrode material dependence of current density indicates that the conventional model of trap-limited single-carrier injection over nonblocking contacts is inadequate to explain the time-zero current. A change in top electrode material from Pt to In leads to the observation of work-function-driven Schottky contacts between the metal and ferroelectric. The current-voltage characteristics fit a two-carrier injection metal-semiconductor-metal model incorporating blocking contacts, with distinct low- and high-current regimes (PZT is assumed to be p-type and trap-free in this model). Temperature-dependent I-V measurements indicate a Pt-PZT barrier height of 0.6 eV and an acceptor doping level of ∼1018 cm−3 in PZT. The implications of this model on the optimization of ferroelectric capacitors for dynamic random access memory applications are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356508
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Transient signals induced by laser irradiation of negative ions in hollow electrode discharges of Cl2 and HCl in N2 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2649-2656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for sampling negative ions in hollow-cathode and hollow-anode discharges of strongly electronegative gases is presented. The negative ions were mass analyzed to be Cl−, Cl−2, and Cl−3 for the discharge of Cl2/N2 mixture and Cl− for HCl/N2. The dependence of negative ion intensity on gas pressure and discharge voltage was investigated. Photodetachment of negative ions was used to induce photoelectron transient signals that probe ion concentrations. The transient signal indicates that negative ions originate in discharge, but not in the mass-analyzer region. Time dependence of the negative ion signal induced by laser irradiation was measured by a quadrupole mass analyzer and used to study the kinetics of charged particles responsible for the transport of laser-induced perturbation. The observed negative ion transient signal is a useful means for studying negative ion kinetics in plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346490
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    An investigation of InxGa1−xAs/GaAs quantum wells grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5464-5468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and transmission electron microscopy have been used to study strained InxGa1−xAs/GaAs (x=0.24–0.28) quantum wells (QWs) grown by molecular-beam epitaxy. The three QWs grown without growth interruptions produce high intensity PL peaks of narrow full width at half-maximum (2.9 meV). On the other hand, the PL peaks in the QWs grown with 30-s interruptions are relatively broad, less symmetric, and show lower PL intensities, compared with the noninterrupted QWs. Our results show that high-quality strained InxGa1−xAs/GaAs QWs can be grown without growth interruptions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340369
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3085-3087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transistors (p-MOSFETs) using a ZrO2 gate dielectric with equivalent oxide thickness (EOT) less than 20 Å was fabricated. These p-MOSFETs show similar behavior to that of other high-k gate dielectric p-MOSFETs reported in the literature, and mobility enhancement is observed in the surface-channel SiGe p-MOSFETs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372204
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...