ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    High-energy electron-induced damage production at room temperature in aluminum-doped silicon (1979)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979; p 185-196
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD (1980)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Resarch Center Space Photovoltaic Res. and Technol.; p 81-85
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer (1982)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1982: High Efficiency, Radiation Damage, and Blanket Technol.; p 99-104
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 4
    facet.materialart.
    Unknown
    Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques (1980)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Photovoltaic Specialists Conference; Jan 07, 1980 - Jan 10, 1980; San Diego, CA
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...