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  • American Institute of Physics (AIP)  (24)
  • American Society of Hematology  (11)
  • Mineralogical Society of America
  • 11
    Electronic Resource
    Electronic Resource
    Effect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2469-2472 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi-Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341655
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  • 12
    Electronic Resource
    Electronic Resource
    Exposure instrumentation for the application of x-ray lithography using synchrotron radiation : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2140-2143 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper reviews the recent progress in the development of exposure equipment for x-ray lithography consisting of compact synchrotron radiation source, beamline, and x-ray stepper. This exposure facility is situated door by door to a CMOS-pilot line. The compact storage ring COSY, under assembly in Berlin, is described and calculations are presented, that show that relatively low accumulated current exposure times of some seconds can be expected using a highly sensitive x-ray resist. A simple, inexpensive, and highly reliable beamline has been realized to connect an x-ray stepper and a light source. Several x-ray steppers have been installed for field testing in the nearby lithography laboratory at BESSY, that are equipped with x-ray reflecting mirrors, or a scanning mask and wafer unit for full-field exposure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140803
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  • 13
    Electronic Resource
    Electronic Resource
    A convergent lattice approximation for nonlinear electromagnetic fields in four dimensions (1993)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 3327-3342 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A discrete version of the quaternionic Cauchy–Riemann equation ∂A=F, where F is Gauss–Poisson white noise, is discussed. On the lattice δZ4 random variables Fδ(δn) and Aδ(δn) are constructed which approximate the corresponding random fields F and A, respectively, in the limit δ→0. In the Gaussian case the random variables Aδ(δn) can be interpreted as the lattice approximation of the free electromagnetic Euclidean potential field whereas in the non-Gaussian case one obtains an approximation of nonlinear interacting electromagnetic quantum fields. Convergence to the continuum limit is proven.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.530079
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  • 14
    Electronic Resource
    Electronic Resource
    Erratum: "GaAs-oxide removal using an electron cyclotron resonance hydrogen plasma'' [Appl. Phys. Lett. 58, 1143 (1991)] (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 616-616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108499
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  • 15
    Electronic Resource
    Electronic Resource
    Fabrication of photonic crystals by deep x-ray lithography (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1441-1443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new microfabrication technique for the construction of three-dimensional photonic crystals. In particular, we used multiple tilted x-ray lithography exposures in order to construct structures with photonic band gaps in the infrared region. First polymethylmethacrylate (PMMA) resist layers with a thickness of 500 μm were irradiated, then the holes in the resist structure were filled with preceramic polymer and subsequent pyrolysis converts the preceramic polymer into a SiCN ceramic. Theoretical results with fitted values of the dielectric constant are in good agreement with the transmission measurements. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120431
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  • 16
    Electronic Resource
    Electronic Resource
    Suppression of lateral fluctuations in CdSe-based quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1118-1120 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a reduction of inhomogeneous broadening in CdSe-related quantum wells in ZnSe by employing a growth technique that uses a CdS-compound source instead of the standard Cd elemental source for molecular-beam epitaxy. Assisted by the low sticking coefficient of sulfur and possibly an exchange reaction between S and Se, only a small S contamination is observed. A comparison with standard layers reveals an increase in quality and homogeneity by a strong reduction of the photoluminescence (PL) linewidth. Samples obtained by our method show extremely little lateral confinement as indicated by a lack of sharp single dot emission lines in micro PL and the absence of the extensive redshift observed in temperature dependent PL of fluctuating well potentials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394172
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  • 17
    Electronic Resource
    Electronic Resource
    Polarized luminescence in CdS/ZnSe quantum-well structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 85-87 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence from type II CdS/ZnSe quantum-well structures is found to be polarized with respect to the 〈110〉 directions with polarization degrees up to 20%. The absolute polarization direction is related to the interface bond directions in samples with differently prepared interfaces. The observations are explained by the detailed analysis of the epitaxial growth process and polarization sensitive luminescence experiments. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126885
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  • 18
    Electronic Resource
    Electronic Resource
    Electron impact ionization of the SO2 molecule (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 211-218 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report measurements of the absolute cross sections for the electron-impact ionization of SO2 from threshold to 200 eV. Absolute cross sections for the formation of the SO+2 parent ions and of the SO+, S+, O+, and O+2 fragment ions were obtained independently in two different laboratories using two different experimental techniques with uncertainties ranging from ±18% to ±25%. The level of agreement between the absolute cross sections (at 70 eV) obtained by the two techniques ranges from about 10% for SO+2 and SO+ to 20% for (S++O+2) and O+, which in all cases is well within the combined error margins of the two measurements. The high resolution capability of the mass spectrometer employed in one experiment enabled the separation of the S+ and O+2 fragment ions, which are separated by only 0.017 76 atomic mass units (amu), for the first time. The single positive ion formation is the dominant process for all observed product ions. The total single SO2 ionization cross section obtained by the two techniques agreed to within 8%. A comparison of the experimentally determined total SO2 single ionization cross sections with calculated cross sections based on a modified additivity rule revealed agreement to within 20%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469634
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  • 19
    Electronic Resource
    Electronic Resource
    Electrochemical tuning of the lifetime of the CO stretching vibration for CO/Pt(111) (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 2438-2445 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have used the large electric fields at the interface of a Pt(111) electrode and an acetonitrile electrolyte solution to tune the interaction between adsorbed CO and the Pt(111) surface. The electrode potential is varied over a 2.5 Volt range. As the electrode potential is made more positive, the CO vibrational frequency increases and the vibrational lifetime decreases. Over the potential range investigated, the tuning is about 35–40 cm−1 and the lifetime varies from ≈2.1 to ≈1.5 ps. Ab initio calculations performed for CO/Cu(100) predicted the opposite trend for the lifetimes for that system [M. Head-Gordon and J. C. Jully, Chem. Phys. 175, 37 (1993)]. Within an empirical model of nonadiabatic charge transfer [B. N. J. Persson and M. Persson, Solid State Commun. 36, 175 (1980)], our observations can be explained by a decreasing 2π-derived density of states of the Pt/CO complex at the Fermi level. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470938
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  • 20
    Electronic Resource
    Electronic Resource
    New assignments in the UV spectroscopy of the small benzene–argonn clusters: The effects of a structure-selective vibrational predissociation (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 1676-1686 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this paper, new experimental results using UV spectroscopy of the small benzene–Arn clusters are presented. We have found evidence for the vibrational predissociation of the S1 state of some of these species on a nanosecond time scale and we propose a new assignment for the UV spectral features of this system. This assignment is consistent with other experimental data and it accounts additionally for the previously reported spectral anomalies, in particular the ionization potential measurements of these species. The two-color R2PI spectra performed can thus be considered as nanosecond pump–probe experiments that allow us to estimate the relaxation rate of the S1state of these clusters. The vibrational relaxation is found to be strongly size and structure dependent: The two isomers [(1/1) and (2/0)] of the n=2 species exhibit different lifetimes differing by at least one order of magnitude. The size dependence of the relaxation process within the one-sided isomer series appears also paradoxical since the relaxation rates of the (3/0) and (4/0) species are found to be smaller than that of the (2/0). These properties are discussed in relationship with the symmetry of these species. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473321
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