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  • 1
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    Improved memory characteristics of charge trap memory by employing double layered ZrO2 nanocrystals and inserted Al2O3 (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-26
    Description: The charge trap memory capacitors incorporating a stacked charge trapping layer consisting of double layered ZrO 2 nanocrystals (NCs) and inserted Al 2 O 3 have been fabricated and investigated. It is observed that the memory capacitor with stacked trapping layer exhibits a hysteresis window as large as 14.3 V for ±10 V sweeping gate voltage range, faster program/erase speed, improved endurance performance, and good data retention characteristics with smaller extrapolated ten years charge loss at room temperature and 125 °C compared to single layered NCs. The special energy band alignment and the introduced additional traps of double layered ZrO 2 NCs and inserted Al 2 O 3 change the trapping and loss behavior of charges, and jointly contribute to the remarkable memory characteristics. Therefore, the memory capacitor with a stacked charge trapping layer is a promising candidate in future nonvolatile charge trap memory device design and application.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Low voltage tunneling magnetoresistance in CuCrO2-based semiconductor heterojunctions at room temperature (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-09
    Description: CuCrO 2 -based heterojunction diodes with rectifying characteristics have been fabricated by combining p -type Mg-doped CuCrO 2 and n -type Al-doped ZnO. It was found that the current for the heterojunction in low bias voltage region is dominated by the trap-assisted tunneling mechanism. Positive magnetoresistance (MR) effect for the heterojunction can be observed at room temperature due to the tunneling-induced antiparallel spin polarization near the heterostructure interface. The MR effect becomes enhanced with the magnetic field, and shows the maximum at a bias voltage around 0.5 V. The phenomena indicate that the CuCrO 2 -based heterojunction is a promising candidate for low-power semiconductor spintronic devices.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Pd/Ag coated fiber Bragg grating sensor for hydrogen monitoring in power transformers (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-04-24
    Description: Compared with conventional DGA (dissolved gas analysis) method for on-line monitoring of power transformers, FBG (fiber Bragg grating) hydrogen sensor represents marked advantages over immunity to electromagnetic field, time-saving, and convenience to defect location. Thus, a novel FBG hydrogen sensor based on Pd/Ag (Palladium/Silver) along with polyimide composite film to measure dissolved hydrogen concentration in large power transformers is proposed in this article. With the help of Pd/Ag composite coating, the enhanced performance on mechanical strength and sensitivity is demonstrated, moreover, the response time and sensitivity influenced by oil temperature are solved by correction lines. Sensitivity measurement and temperature calibration of the specific hydrogen sensor have been done respectively in the lab. And experiment results show a high sensitivity of 0.055 pm/( μ l/l) with instant response time about 0.4 h under the typical operating temperature of power transformers, which proves a potential utilization inside power transformers to monitor the health status by detecting the dissolved hydrogen concentration.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 4
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    Ultrafast electron diffraction from non-equilibrium phonons in femtosecond laser heated Au films (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-01-29
    Description: We use ultrafast electron diffraction to detect the temporal evolution of non-equilibrium phonons in femtosecond laser-excited ultrathin single-crystalline gold films. From the time-dependence of the Debye-Waller factor, we extract a 4.7 ps time-constant for the increase in mean-square atomic displacements. The observed increase in the diffuse scattering intensity demonstrates that the energy transfer from laser-heated electrons to phonon modes near the X and K points in the Au fcc Brillouin zone proceeds with timescales of 2.3 and 2.9 ps, respectively, faster than the Debye-Waller average mean-square displacement.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-03-15
    Description: In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6- μ m-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10 −7  A to 3.9 × 10 −4  A as n increased from 7.5 × 10 14  cm −3 to 6.3 × 10 15  cm −3 at a reverse bias of 100 V. By capping the drift layer with an ultrathin 5-nm graded AlGaN layer, reverse leakage was reduced by more than three orders of magnitude with the same n in the drift layer. We attribute this to the increased Schottky barrier height with the AlGaN at the surface. Meanwhile, the polarization field within the graded AlGaN effectively shortened the depletion depth, which led to the formation of tunneling current at a relatively small forward bias. The turn-on voltage in the vertical Schottky diodes was reduced from 0.77 V to 0.67 V—an advantage in reducing conduction loss in power switching applications.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-02-10
    Description: Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 10 15  cm −3 and 3 × 10 19  cm −3 . Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6- μ m drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of carbon nanotubes by gas source molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1973-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiwall carbon nanotubes have been grown by gas source molecular beam epitaxy in the presence of Ni catalyst. Some nanotubes show thinner bases compared with their heads. First- and second-order Raman scattering spectra are used to study the structure of samples with different initial thicknesses of Ni layers. The second-order 2D Raman mode of carbon nanotubes shows a downshift compared with the graphite-like structure. The growth of carbon nanotubes is found to depend on the size of the metal droplets. When the initial Ni layer is either too thick or too thin, few carbon nanotubes are observed. The Raman spectra show graphite and glassy carbon structures for too thick and too thin initial Ni layer films, respectively. Only when a proper range of Ni catalyst film is used, carbon nanotubes could be found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337083
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  • 8
    Electronic Resource
    Electronic Resource
    Spin-state transition in La1−xSmxCoO3 perovskites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1331-1335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of La1−xSmxCoO3 with x=0, 0.02, 0.04, 0.06, 0.08, 0.12, 0.16, and 0.2 have been systematically studied. LaCoO3 exhibits a rhombohedral structure of R3¯C symmetry. The lattice parameters decrease progressively with the incorporation of Sm, and a second orthorhombic phase of Pbnm symmetry appears for x≥0.12. The volume fraction of the orthorhombic phase is a sensitive function of the Sm content in the compounds, and increases from 16% for x=0.12 to 75% for x=0.2. Accordingly, the low-spin-to-high-spin transition of the trivalent Co ions, characterized by a steep rise of the magnetization, shifts to higher temperatures. A molecular field analysis indicates an increased energy gap, from 317 K for x=0 to 500 K for x=0.2, between the low-spin and the high-spin state, implying a stabilization of the low-spin trivalent Co ions by the presence of Sm. The enhanced compressive chemical pressure due to the introduction of Sm is suggested to be responsible for the present observations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336521
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  • 9
    Electronic Resource
    Electronic Resource
    Properties of fixed-position Bragg diffractors for parallel detection of x-ray spectra (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2195-2200 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Advantages of wavelength-dispersive spectrometers over energy-dispersive spectrometers for parallel detection of x rays are discussed and factors involved in the design of wavelength-dispersive spectrometers are reviewed. The dispersion and collection solid angle of fixed-position Bragg diffractors used for parallel detection of x rays are calculated and the properties of four such spectrometers based on singly and doubly curved diffractors are compared with the properties of scanning monochromators. It is concluded that the previously studied parallel-detection spectrometers based on Bragg diffractors are less advantageous than scanning monochromators but they may be preferred when it is necessary to detect many characteristic x-ray lines simultaneously or to avoid the use of moving parts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143959
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  • 10
    Electronic Resource
    Electronic Resource
    D-Homoannulation of 5.alpha.-pregnane-3.beta., 20.beta.-diol 3-acetate with phosphorus pentabromide (1968)
    s.l. : American Chemical Society
    The @journal of organic chemistry 33 (1968), S. 3632-3635 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01273a061
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