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  • 1
    Electronic Resource
    Electronic Resource
    Studies of the promising material CoSi2 on GaAs substrates (1994)
    Springer
    Applied physics 59 (1994), S. 335-337 
    Details
    ISSN: 1432-0630
    Keywords: 68.60.Dv ; 68.55.Jk ; 73.40.Ns ; 73.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thermal stability of CoSi2 thin films on GaAs substrates has been studied using a variety of techniques. The CoSi2 thin films were formed by depositing Co(500 Å) and Si(1800 Å) layers on GaAs substrates by electron-beam evaporation followed by annealing processes, where the Si inter-layer was used as a diffusion/reaction barrier at the interface. The resistivity of CoSi2 thin films formed is about 30 μΩ cm. The Schottky barrier height of CoSi2/n-GaAs is 0.76 eV and the ideality factor is 1.14 after annealing at 750° C for 30 min. The CoSi2/GaAs interface is determined to be thermally stable and the thin film morphologically uniform on GaAs after 900° C/30 s anneal. The CoSi2 thin films fulfill the requirements in GaAs self-aligned gate technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348240
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  • 2
    Electronic Resource
    Electronic Resource
    Cloning of a DNA Binding Protein That Recognizes the PLP Promoter (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 605 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb42419.x
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  • 3
    Electronic Resource
    Electronic Resource
    Product cross sections for the reaction of ^1^2C with ^2^0^9Bi
    Amsterdam : Elsevier
    Nuclear Physics, Section A 349 (1980), S. 285-300 
    Details
    ISSN: 0375-9474
    Keywords: Nuclear reactions
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9474(80)90455-8
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetooptical Kerr effect in Fe-SiO2 granular films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 439-441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polar Kerr rotation spectra of Fe-SiO2 granular films were measured at room temperature in the wavelength region between 400 nm and 850 nm. A maximum Kerr rotation angle (θk) of 18 min was obtained when a magnetic field of 10 kOe was applied perpendicular to the film plane. We have measured θk as a function of Fe volume fraction (fv) of the films. It was found that θk increases with increasing fv and peaks at fv≈0.4. We also found that θk decreases as the Fe particle size increases. Our results indicate that the density of Fe particles and the interfaces between Fe particles and SiO2 matrix may play an important role in the Kerr rotation of granular films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360623
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  • 5
    Electronic Resource
    Electronic Resource
    Raman scattering by longitudinal acoustic phonons in metallic W/Ti Fibonacci superlattice (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4063-4066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering from longitudinal acoustic phonons in W/Ti Fibonacci superlattice is studied. Doublet peaks which result from the folded longitudinal acoustic phonons appear in the Raman spectra as expected. Based on the Kronig–Penney model or the Rytov model, both the normal-mode frequencies and scattering intensities are numerically calculated by using a transfer-matrix method. Noticeable agreement is obtained between the results of quantitative calculations and experimental data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363368
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy and interlayer exchange coupling in the sputtered Co/Ag multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5549-5553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-plane uniaxial anisotropy and perpendicular anisotropy of sputtered Co/Ag(111) multilayers have been investigated by magnetic measurements and the in-plane ferromagnetic resonance (FMR) technique. The data-fitting analysis for the FMR experimental results about the angular dependence of the resonance field shows that the in-plane anisotropy cannot be fully described by only using the first-order term, and the second-order term must be included. Furthermore, the interface-induced anisotropy has been obtained by FMR. Both ferromagnetic and antiferromagnetic couplings have been revealed by hysteresis loop measurement. Specifically, a spin-flip phase transition has been observed in the sputtered Co/Ag(111) multilayers, which is attributed to the effects of the AF-coupling and in-plane uniaxial anisotropy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359675
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of carbon nanotubes by gas source molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1973-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiwall carbon nanotubes have been grown by gas source molecular beam epitaxy in the presence of Ni catalyst. Some nanotubes show thinner bases compared with their heads. First- and second-order Raman scattering spectra are used to study the structure of samples with different initial thicknesses of Ni layers. The second-order 2D Raman mode of carbon nanotubes shows a downshift compared with the graphite-like structure. The growth of carbon nanotubes is found to depend on the size of the metal droplets. When the initial Ni layer is either too thick or too thin, few carbon nanotubes are observed. The Raman spectra show graphite and glassy carbon structures for too thick and too thin initial Ni layer films, respectively. Only when a proper range of Ni catalyst film is used, carbon nanotubes could be found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337083
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum waveguide theory of serial stub structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1597-1608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic behaviors in quantum wires with serial stubs are studied. A general theory of quantum waveguide based on transfer matrix method is developed and is used to treat periodic stub structures, serial stub structures with a defect stub, and Fibonacci stub structures. A number of interesting physical properties in connection with electronic transmission, energy spectra, and charge density distributions in these structures, are found theoretically. In particular, we find that whether there are periodicity and symmetry in the transmission and energy spectra depends on the commensurability of the length parameters. If one length ratio is incommensurate, then the transmission and energy spectra do not exhibit periodicity and symmetry even for periodic stub structures. In particular, the quasiperiodic behaviors are shown in Fibonacci stub structures proposed by us whenever the length parameters are commensurate. The experimental relevance is also addressed briefly. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369292
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  • 9
    Electronic Resource
    Electronic Resource
    Ge/Si interdiffusion in the GeSi dots and wetting layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4290-4292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Ge/Si interdiffusion in GeSi dots grown on Si (001) substrate by gas-source molecular beam epitaxy is investigated. Transmission electron microscopy images show that, after annealing, the aspect ratio of the height to base diameter increases. Raman spectra show that the Si–Ge mode redshifts and the intensity of the local Si–Si mode increases with the increase of annealing temperature, which suggests the Ge/Si interdiffusion during annealing. The photoluminescence peaks from the dots and the wetting layers show blueshift due to the atomic intermixing during annealing. The interdiffusion thermal activation energies of GeSi dots and the wetting layers are 2.16 and 2.28 eV, respectively. The interdiffusion coefficient of the dots is about 40 times higher than that of wetting layers and the reasons were discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403667
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  • 10
    Electronic Resource
    Electronic Resource
    Compliant effect of low-temperature Si buffer for SiGe growth (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 454-456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Relaxed SiGe attracted much interest due to the applications for strained Si/SiGe high electron mobility transistor, metal-oxide-semiconductor field-effect transistor, heterojunction bipolar transistor, and other devices. High-quality relaxed SiGe templates, especially those with a low threading dislocation density and smooth surface, are critical for device performance. In this work, SiGe films on low-temperature Si buffer layers were grown by solid-source molecular-beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, and photoluminescence spectroscopy. It was demonstrated that, with the proper growth temperature and Si buffer thickness, the low-temperature Si buffer became tensily strained and reduced the lattice mismatch between the SiGe and the Si buffer layer. This performance is similar to that of the compliant substrate: a thin substrate that shares the mismatch strain in heteroepitaxy. Due to the smaller mismatch, misfit dislocation and threading dislocation densities were lower. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337633
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