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  • 1
    Electronic Resource
    Electronic Resource
    Chromosomal location of powdery mildew resistance gene Pm16 in wheat using SSR marker analysis (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 124 (2005), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The use of resistant cultivars is a most economical way to control powdery mildew (Blumeria graminis f.sp. tritici) in wheat (Triticum aestivum L.). Identification of molecular markers closely linked to resistance genes can greatly increase the efficiency of pyramiding resistance genes in wheat cultivars. The objective of this study was to identify molecular markers closely linked lo the powdery mildew resistance gene Pm16. An F2 population with 156 progeny was produced from the cross‘Chancellor’(susceptible) ב70281’ (resistant), A total of 45 SSR markers on chromosomes 4A and 5B of wheat and 15 SSRs on chromosome 3 of rice was used lo lest the parents, as well as the resistant and susceptible bulks: the resulting polymorphic markers were used to genotype the F2 progeny. Results indicated that the SSR marker Xgwm159, located on the short arm of chromosome 5B, is closely linked to Pm16 (genetic distance: 5.3 CM). The cytogenetical data presented in an original report, in combination with this molecular analysis, suggests that Pm16 may he located on a translocated 4A.5BS chromosome.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.2005.01094.x
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  • 2
    Electronic Resource
    Electronic Resource
    High-quality strain-relaxed SiGe films grown with low temperature Si buffer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8279-8283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si0.7Ge0.3 film with a low threading dislocation density as well as smooth surface was obtained by this method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375801
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of carbon nanotubes by gas source molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1973-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiwall carbon nanotubes have been grown by gas source molecular beam epitaxy in the presence of Ni catalyst. Some nanotubes show thinner bases compared with their heads. First- and second-order Raman scattering spectra are used to study the structure of samples with different initial thicknesses of Ni layers. The second-order 2D Raman mode of carbon nanotubes shows a downshift compared with the graphite-like structure. The growth of carbon nanotubes is found to depend on the size of the metal droplets. When the initial Ni layer is either too thick or too thin, few carbon nanotubes are observed. The Raman spectra show graphite and glassy carbon structures for too thick and too thin initial Ni layer films, respectively. Only when a proper range of Ni catalyst film is used, carbon nanotubes could be found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337083
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  • 4
    Electronic Resource
    Electronic Resource
    Ge/Si interdiffusion in the GeSi dots and wetting layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4290-4292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Ge/Si interdiffusion in GeSi dots grown on Si (001) substrate by gas-source molecular beam epitaxy is investigated. Transmission electron microscopy images show that, after annealing, the aspect ratio of the height to base diameter increases. Raman spectra show that the Si–Ge mode redshifts and the intensity of the local Si–Si mode increases with the increase of annealing temperature, which suggests the Ge/Si interdiffusion during annealing. The photoluminescence peaks from the dots and the wetting layers show blueshift due to the atomic intermixing during annealing. The interdiffusion thermal activation energies of GeSi dots and the wetting layers are 2.16 and 2.28 eV, respectively. The interdiffusion coefficient of the dots is about 40 times higher than that of wetting layers and the reasons were discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403667
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  • 5
    Electronic Resource
    Electronic Resource
    Compliant effect of low-temperature Si buffer for SiGe growth (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 454-456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Relaxed SiGe attracted much interest due to the applications for strained Si/SiGe high electron mobility transistor, metal-oxide-semiconductor field-effect transistor, heterojunction bipolar transistor, and other devices. High-quality relaxed SiGe templates, especially those with a low threading dislocation density and smooth surface, are critical for device performance. In this work, SiGe films on low-temperature Si buffer layers were grown by solid-source molecular-beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, and photoluminescence spectroscopy. It was demonstrated that, with the proper growth temperature and Si buffer thickness, the low-temperature Si buffer became tensily strained and reduced the lattice mismatch between the SiGe and the Si buffer layer. This performance is similar to that of the compliant substrate: a thin substrate that shares the mismatch strain in heteroepitaxy. Due to the smaller mismatch, misfit dislocation and threading dislocation densities were lower. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337633
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  • 6
    Electronic Resource
    Electronic Resource
    Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1763-1765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature- and excitation-power-dependent photoluminescence measurements were carried out for the multilayer structure of Ge islands grown on a Si(001) substrate by gas-source molecular-beam epitaxy. When the excitation power increases from 10 to 400 mW, the photoluminescence peak from the Ge islands showed a large linear blueshift of 34 meV while that of the wetting layers did not change much. These two different power dependences are explained in terms of type-II and type-I band alignments for the islands and the wetting layers, respectively. When the sample temperature increased from 8 to 20 K, an anomalous increase of photoluminescence intensity for islands was accompanied by a rapid decrease of that from the wetting layers, implying that a large portion of photon-induced carriers in the wetting layer was transfered to the neighboring islands and the Si layer, respectively, thus resulting in an increase of photoluminescence intensity of the islands. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356454
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  • 7
    Electronic Resource
    Electronic Resource
    High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3431-3433 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality Ge films were grown on Si substrates by solid-source molecular beam epitaxy using SiGe graded layer and Sb surfactant-mediation technique. Transmission electron microscopy measurements show that samples grown using this method have a lower threading dislocation density than those grown by other typical methods, such as grading at high temperature (700 °C) only, grading at intermediate temperature (510 °C) only, and the use of low temperature Si buffer. A relaxed Ge film on a 4-μm-thick graded buffer was grown and shown to have a threading dislocation density of 5.4×105 cm−2 and surface roughness of 35 Å. Ge p–i–n diodes were fabricated and tested. Under a reverse bias of 1 V, the p–i–n Ge mesa photodiodes exhibit a very low dark current density of 0.15 mA/cm2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421092
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of inter-sub-level transitions in modulation-doped Ge quantum dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1745-1747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The inter-sub-level transitions in modulation-doped Ge quantum dots are observed. The dot structure is grown by molecular-beam epitaxy, and consists of 30 periods of Ge quantum dots sandwiched by two 6 nm boron-doped Si layers. An absorption peak in the midinfrared range is observed at room temperature by Fourier transform infrared spectroscopy, which is attributed to the transitions between the first two heavy-hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector applications. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124806
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  • 9
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices' " [Appl. Phys. Lett. 78, 1160 (2001)] (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1162-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350590
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of interdiffusion on the band alignment of GeSi dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1980-1982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405152
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