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  • 1
    Electronic Resource
    Electronic Resource
    THE PHOTOLYSIS OF AZOMETHANE AT HIGHER PRESSURES: A SECOND ETHANE-PRODUCING REACTION (1962)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 66 (1962), S. 2681-2683 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100818a075
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  • 2
    Electronic Resource
    Electronic Resource
    Optical waveguides formed by deuterium passivation of acceptors in Si doped p-type GaAs epilayers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4151-4155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of plasma hydrogenation of Si doped, p-type GaAs crystalline samples to form infrared waveguides through acceptor passivation. Epilayers grown by liquid phase epitaxy were exposed to a deuterium plasma for ninety minutes at three different temperatures. Secondary-ion mass spectrometry (SIMS) analysis indicated that the deuterium concentrations in the crystals after plasma exposure were nearly equal to the acceptor level and extended to depths between 2.0 and 4.0 μm. Reflectivity measurements showed that the epilayers had passivated regions whose thicknesses corresponded to those determined by SIMS analysis. Laser coupling experiments at 1.15 μm showed optical waveguiding in each sample and lowest propagation losses were on the order of 35 dB/cm. At a wavelength of 1.523 μm, only the sample processed at the highest temperature exhibited laser guiding and losses were considerably higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350849
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  • 3
    Electronic Resource
    Electronic Resource
    Disordering of AlGaAs/GaAs quantum well structures using low dose oxygen implantation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5715-5717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the photoluminescence study of low-energy, low-dose oxygen implantation induced compositional disordering of AlGaAs/GaAs quantum well structures. Significant disordering of both single and multiple AlGaAs/GaAs quantum wells has been achieved using low-energy (155 keV) oxygen ion implantation with doses as small as 5 × 1013 cm−2 after a moderate annealing step. These doses are significantly lower than those reported previously (500 keV and 1016 cm−2).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350508
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  • 4
    Electronic Resource
    Electronic Resource
    The optical properties of AlGaAs/GaAs hyperbolic quantum-well structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1054-1056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of a nonsquare quantum well with a hyperbolic potential profile have been analyzed. The quantized energy levels for the confined carriers are determined analytically using the effective mass approximation. The absorption coefficients for an undoped AlGaAs/GaAs hyperbolic quantum-well structure have been calculated based on the one electron density matrix formulation, taking into account broadening effect due to intraband relaxation by carrier–carrier scattering. The results show that the absorption edge as well as its peak value are more sensitive to well shape than well width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349694
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of heat treatments on the structure and composition of Al(0.8% Si)/TiW/polycrystalline Si system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4341-4343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatments on the structure and composition of a system consisting of a conductive outer layer made of Al(0.8% Si) thin film, TiW(30:70 at. %) thin film as a diffusion barrier, and a polycrystalline Si substrate was studied. It was established that heat treatments at temperatures ranging between 400 and 500 °C led to the diffusion of Si and Al through the TiW layer, following which Al diffused into the polycrystalline Si, while Si diffused into the Al film. The silicides of TiSi, TiSi2, and intermetallic compounds of Al3Ti and WAl12 were formed at the Al/TiW interface as a result of the 30-min heat treatment at temperatures ranging between 450 and 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348409
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  • 6
    Electronic Resource
    Electronic Resource
    Study of the electron field emission and microstructure correlation in nanocrystalline carbon thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5671-5675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline carbon thin films were deposited by hot-filament chemical vapor deposition using a 2% concentration of methane in hydrogen. The films were deposited on molybdenum substrates under various substrate biasing conditions. A positive bias produced a continuous flow of electrons from the filament onto the substrate, while a negative bias caused the substrate to be bombarded with positive ions. Films were also grown under no bias, for comparison. Differences in the electron field emission properties (turn-on fields and emitted currents) of these films were characterized. Correspondingly, microstructural differences were also studied, as characterized with atomic force microscopy and Raman spectroscopy. Films grown under electron bombardment showed lower turn-on fields, smoother surfaces, and smaller grains than those grown under ion bombardment or no bias. A correlation between the enhanced emission properties and the nanocrystalline carbon material produced by the low-energy particle bombardment was found through the parameters obtained using spectroscopic ellipsometry modeling. The results confirm the significant role of defects on the electron field emission mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367873
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  • 7
    Electronic Resource
    Electronic Resource
    Interaction of Ni90Ti10 alloy thin film with 6H-SiC single crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 167-173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions, phase formation, microstructure, and composition, as functions of heat treatments (400–800 °C) were investigated in Ni90Ti10 alloy thin film coevaporated on an n-type 6H-SiC (0001) single-crystal substrate. The study was carried out with the aid of Auger electron spectroscopy, x-ray diffraction, and analytical transmission electron microscopy. The interaction was found to begin at 450 °C. Ni and C are the dominant diffusing species. The reaction zone is divided into three layers. In the first layer, adjacent to the SiC substrate, the presence of Ni-rich silicide, Ni2Si, and C precipitates, was observed. The second layer is composed mainly of TiC, while the third consists of Ni2Si. This composite structure, consisting of the silicide as a low resistivity ohmic contact, and of the carbide as a diffusion barrier, promises high-temperature stability crucial to ohmic contact development for SiC technology. Factors controlling phase formation in the Ni–Ti/SiC system are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362801
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  • 8
    Electronic Resource
    Electronic Resource
    Interaction between Ni90Ti10 alloy thin film and Si single crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1179-1181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions in annealed Ni90Ti10 alloy thin films deposited on Si(100) were studied. The investigation was carried out by Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Well defined phase separation was observed in the reaction zone. The first layer, adjacent to the Si substrate, contains Ni silicide, the second layer is most probably composed of the ternary Ni-Ti-Si compound. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362669
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2254-2257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of the modal propagation loss of planar SiGe/Si heterojunction waveguides with Ge concentrations ranging from 1.3% to 10% has been determined for both TE and TM polarizations at wavelengths of 1.15 and 1.523 μm. The results show that at 1.15 μm wavelength the propagation loss increases with increasing Ge concentration due to the band-edge absorption, which dominates the waveguide loss characteristics, while at the wavelength of 1.523 μm it decreases with increasing Ge concentration. The polarization sensitivity is only found at the longer wavelength and is thought to be due to the interaction of the evanescent field at the SiGe/Si interface with the Si substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359573
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of phase shifts due to etching in photoreflectance spectra of a GaAs/AlGaAs single-quantum well structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2672-2678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoreflectance measurements of a GaAs/Al0.2Ga0.8As single-quantum well structure showed well defined Franz–Keldysh oscillations in the neighborhood of the GaAs and Al0.2Ga0.8As band-edge energies. That experiment investigated the origin of the Franz–Keldysh oscillations by sequential etching and photoreflectance analysis of the grown layers and showed that the phase of the Franz–Keldysh oscillations shifted as the upper Al0.2Ga0.8As barrier was etched, with eventual phase reversal when roughly half of the upper barrier was removed. Here, these phase shifts are determined accurately using a novel Kramers–Kronig approach and they are interpreted in terms of optical interference effects using both a simple two-ray model and a multiple-reflection treatment incorporating a calculation of the Seraphin coefficients. The results also enable the thickness of the layers removed to be determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358734
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