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  • 1
    Electronic Resource
    Electronic Resource
    The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal-organic chemical-vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6726-6733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.48In0.52As layers grown on n+-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical-vapor deposition (MOCVD), as a function of substrate temperature, have been characterized by current-voltage-temperature, capacitance-voltage, deep-level transient spectroscopy, and admittance spectroscopy measurements. It was found that for diodes formed on MOCVD-AlInAs the current in forward bias is dominated by thermionic emission and the reverse current by recombination through the residual midgap states; whereas, for MBE-AlInAs diodes, the respective currents are dominated by defect-assisted tunneling at low forward and reverse biases. Schottky barrier heights were found to decrease with decreasing growth temperature. Three defect levels E1, E2, and E3 were observed in both material systems, and their densities were found to increase rapidly from ∼1012 to ∼1016 cm−3 as the growth temperature decreased from 740 to 500 °C. The decrease of barrier height and the appearance of the defect-assisted tunneling current at low bias were found to correlate with the increase of defect density. The high density of defects may be responsible for the low barrier heights and higher leakage currents previously observed in AlInAs/InGaAs/InP high electron mobility transistors though MOCVD growth provided high quality AlInAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355069
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  • 2
    Electronic Resource
    Electronic Resource
    Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, mismatch, and growth temperature (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4319-4323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is focused on the study of the fine speckle contrast present in planar view observations of matched and mismatched InGaAs layers grown by molecular beam epitaxy on InP substrates. Our results provide experimental evidence of the evolution of this fine structure with the mismatch, layer thickness, and growth temperature. The correlation of the influence of all these parameters on the appearance of the contrast modulation points to the development of the fine structure during the growth. Moreover, as growth proceeds, this structure shows a dynamic behavior which depends on the intrinsic layer substrate stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352815
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  • 3
    Electronic Resource
    Electronic Resource
    Far-infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 631-637 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers with thicknesses from 1 to 8 μm were grown by molecular-beam epitaxy onto Si(100) substrates. These epitaxial layers were lightly doped with Si (ND(approximately-equal-to)2×1016 cm−3). The determination of accurate numbers for the carrier concentrations and mobilities in the GaAs is complicated by the low doping and the dimensions of the films. However, a new approach in IR spectroscopy that combines a conventional reflectance measurement from 50 to 500 cm−1 with a transmittance measurement in the very far-infrared range from 12 to 62 cm−1 is demonstrated to provide precise information on both carrier concentrations and mobilities. A comparison of the results obtained at room temperature from IR and Hall measurements reveals that the nondestructive IR technique is an easy to perform and excellent characterization tool for the Ga As layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351845
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  • 4
    Electronic Resource
    Electronic Resource
    Alloy inhomogeneities in InAlAs strained layers grown by molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2470-2471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular-beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351083
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of pseudomorphic insulating HoF3 layers on Si(111) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1858-1860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of pseudomorphic, trigonal structured HoF3 insulating layers, stable at room temperature, on the Si(111) surface. Normally the tysonite structure is only stable at temperatures above 1070 °C [R. E. Thoma and G. D. Brunton, Sov. Phys. Crystallogr. 18, 473 (1966)]. A phase transition to the lower-temperature orthorhombic structure is observed for a thickness of around 12 A(ring), consistent with the relaxation of elastic strain in the insulating layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349506
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  • 6
    Electronic Resource
    Electronic Resource
    The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4908-4915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of investigations are presented which address various aspects of the growth, by molecular beam epitaxy, of n-type (Si doped) on-axis GaAs/GaAs(111)B. In situ characterization by reflection high-energy electron diffraction has identified four surface phases on the static (zero growth rate) surface, and three reconstructions which occur, depending upon the substrate temperature, during growth. The n-type doping properties of GaAs/GaAs(111)B epilayers have been compared with n-GaAs/GaAs(100) structures. Hall effect and low-temperature photoluminescence measurements have demonstrated that it is possible to dope GaAs/GaAs(111)B with Si in the 6×1014 to 1018 cm−3 range. A variable growth temperature study is also presented which examines the surface structural, electrical, optical, and surface morphological properties of n-GaAs/GaAs(111)B grown in the 400 to 650 °C temperature range. The onset of electrical conduction, and optically active material, was found to be directly related to changes in the dynamic surface structure. The variable growth temperature study also revealed a temperature regime within which it was possible to significantly improve the surface morphology of on-axis GaAs/GaAs(111)B structures whilst retaining good electrical and optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350638
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of silicon delta-doped gallium arsenide using the Shubnikov–de Haas effect and theoretical modeling (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3583-3588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed study of electron sub-band occupancies and saturation effects in silicon delta-doped gallium arsenide samples, using Hall and Shubnikov–de Haas (SdH) measurements in conjunction with numerical modeling. This study extends previous work in two respects. First, the samples, produced by molecular beam epitaxy with a nominal delta doping density of 1×1013 cm−2, were examined over a wide range of growth temperature (395–710 °C) to allow the influence of broadening of the doping profile to be examined. Second, the numerical modeling method, based on a self-consistent solution of Poisson's and Schrödinger's equations, included directly the influence of DX-like donor levels, located at 200 meV above the conduction band edge. Excellent agreement with the individual sub-band occupancies determined by SdH was found for all samples up to a growth temperature of 605 °C, with the total silicon doping density kept constant and dopant broadening as the only adjustable parameter in the fit. Despite the evidence for inclusion of DX-like donor levels based on our modeling, all samples showed only a weak persistent photoconductivity effect. This is in contrast to uniformly doped bulk GaAs, indicating the different nature of the DX level in two and three dimensional doping. Above 605 °C it was not possible to model sub-band occupancies using a constant total doping density, showing that another deactivation mechanism such as autocompensation becomes important.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357418
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  • 8
    Electronic Resource
    Electronic Resource
    An investigation of the electrical and chemical properties of intimate metal-InyAl1−yAs(100) interfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2481-2488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and chemical properties of the interfaces formed at room temprature, between the surface of epitaxial n-type InyAl1−yAs(100) and a selection of metals have been studied. Highly ideal Au, Ag, Cu, and In diodes exhibiting the highest reported barriers (0.78–0.91 eV), measured by the current-voltage (I-V) technique, have been obtained by forming intimate contacts on atomically clean, lattice matched, molecular beam epitaxy grown InyAl1−yAs/InP(100). The formation of Au- and In-InyAl1−yAs interfaces has been investigated using x-ray photoemission spectroscopy, showing that in both cases the Fermi level is pinned at the surface prior to metal deposition. The deposition of both In and Au overlayers initiated the selective removal of As from the interface to segregate on the metal surface; however the presence of these metals on the semiconductor surface produced no further Fermi shift. These observations, in conjunction with the barrier heights measured by the I-V technique, are discussed in the context of currently supported models of Schottky barrier formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356246
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 628-630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements have been used to characterize Si-doped GaAs layers, ranging in thickness from 1.1–8.1 μm, grown on Si(111) and misorientated Si(100) substrates by molecular beam epitaxy. 4.2 K PL spectra for GaAs/Si (100) show a strain-induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.8± 0.15 kbar acting on the GaAs layer. Similar measurements for GaAs/Si(111) indicate that the GaAs layer is subject to a biaxial tensile stress of 3.9±0.15 kbar at 4.2 K. Furthermore, the intensity and line shape of luminescence features for GaAs/Si(111) for the first time indicate a crystalline quality comparable with the best GaAs/Si(100) material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104550
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  • 10
    Electronic Resource
    Electronic Resource
    Effective barrier height, conduction-band offset, and the influence of p-type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 842-844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the effective band discontinuity at an n-isotype heterojunction interface can be significantly modified by introducing p-type δ doping close to the interface during molecular beam epitaxy growth. This is shown for the case of the relaxed InAs-GaAs interface where the band discontinuities with and without δ doping have been measured by the I-V technique coupled with appropriate numerical modeling of the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104507
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