ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical and chemical properties of the interfaces formed at room temprature, between the surface of epitaxial n-type InyAl1−yAs(100) and a selection of metals have been studied. Highly ideal Au, Ag, Cu, and In diodes exhibiting the highest reported barriers (0.78–0.91 eV), measured by the current-voltage (I-V) technique, have been obtained by forming intimate contacts on atomically clean, lattice matched, molecular beam epitaxy grown InyAl1−yAs/InP(100). The formation of Au- and In-InyAl1−yAs interfaces has been investigated using x-ray photoemission spectroscopy, showing that in both cases the Fermi level is pinned at the surface prior to metal deposition. The deposition of both In and Au overlayers initiated the selective removal of As from the interface to segregate on the metal surface; however the presence of these metals on the semiconductor surface produced no further Fermi shift. These observations, in conjunction with the barrier heights measured by the I-V technique, are discussed in the context of currently supported models of Schottky barrier formation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356246
