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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3302-3314 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Room temperature and rotationally cooled relative photoionization cross sections for H2O and D2O were determined in the wavelength region 650–990 A(ring) with a wavelength resolution of 0.06–0.11 A(ring) (∼7–12 cm−1 ); the spectra were normalized to the absolute photoionization cross sections determined by Katayama et al. [D. H. Katayama, R. E. Huffman, and C. L. O'Bryan, J. Chem. Phys. 59, 4309 (1973)] with lower resolution. A rotational analysis of the Π subbands in the (0,6,0) and (0,8,0) bands of the (A˜ 2A1)3db11B1←X˜1A1 Rydberg transition determined the symmetry of the upper state; in addition, the series was extended to higher principal quantum numbers. The analysis of these and other bands was made difficult both by the large natural linewidths of the rotational transitions and by the absence of transitions to rotational levels with N'(approximately-greater-than)3.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2312-2314 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Separate confinement strained layer single quantum well diode lasers on GaAs substrates have been fabricated by low-pressure organometallic vapor phase epitaxy. Laser diode structures with a 90 A(ring) quantum well under compressive strain, composed of InxGa1−xAs with x=0.00–0.17, as well as tensile strain, composed of GaAs1−yPy with y=0.00–0.29, have been studied. The emission wavelength ranges from λ=746 nm for y=0.29 up to λ=962 nm for x=0.17. The strain dependence of the threshold current for broad area devices is studied both experimentally and theoretically as a function of temperature. Regions of optimal laser performance, one for compressive and one for tensile strain, are identified.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 7903-7925 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reactions of metastable Kr* and Xe* atoms with several Br-containing molecules are studied with a beam-gas experimental apparatus. For Kr*, state selection of the metastable atom beam is employed to investigate the influence of the initial fine-structure state Kr*(3P0) and Kr*(3P2) on the reaction. Trial-and-error simulation of the observed emission spectra results in modified potential energy curves for the X, A(3/2), B, and C states of the KrBr and XeBr excimer products and corresponding transition moments. The propensity for conservation of the Kr+(2P1/2) ion core in the reactions of Kr*(3P0) is observed to be between 36% and 51%, depending on the target, while for the Kr+(2P3/2) core the propensity is close to 100%. This is in general agreement with the results of Sadeghi, Cheaib, and Setser [J. Chem. Phys. 90, 219 (1989)] for Ar*. The reactive cross section is appreciably smaller for Kr*(3P0) than for Kr*(3P2). For several reagents, the analysis leads to a preference for formation of KrBr and XeBr in the C state, different from results of flowing afterglow experiments. This points to incomplete correction for collisional relaxation and for overlap of B→X and C→A(3/2) emission in previous work. For most reagents, the vibrational distributions are analogous for both XeBr and KrBr in both the C and B states. For XeBr(B), the results are generally in agreement with the work of Tamagake, Kolts, and Setser [J. Chem. Phys. 74, 4286 (1981)].
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6222-6226 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-band model that considers the coupling effects among the conduction band, light-hole band, and spin-orbit split-off–hole band is used to investigate carrier transport in InAs/AlSb/GaSb interband tunneling structures. The E-k relations and the boundary conditions suitable for the three-band model are derived from the Hamiltonian. Good agreement in the peak current density and peak voltage between experiments and model has been achieved. It is also found that the three-band model shows better agreement in the peak current densities than those of two-band model. It indicates the importance of the coupling effects of the spin-orbit split-off–hole band to the InAs/AlSb/GaSb interband tunneling structures. The valley current components, the key ingredient of the peak-to-valley current ratios, such as the thermionic currents and hole tunneling current, are studied to fit the experimental peak-to-valley current ratios. It is found that the thermionic currents can be neglected due to the large band offset (barrier height). The hole tunneling current, the major part of valley current, decreases with the AlSb barrier thickness. However, deviations from the experiments still exist. Furthermore, the effect of the band bending at the interfaces influences the I-V characteristics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4104-4106 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the europium monochalcogenides, EuS, EuSe, and EuTe, have been produced using pulsed laser deposition on to heated quartz substrates. The films show a high degree of orientation of the (001) planes parallel to the substrate. In optical absorption, the shift of the band edge on cooling below their Curie/Néel temperatures is clearly seen.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1528-1530 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous 13CH4/12C2H2 isotopic competition experiments on the mechanism of diamond growth by chemical vapor deposition are reanalyzed in light of recent evidence for a nonlinear dependence of the first-order Raman shift frequency on 13C mole fraction. The new Raman data imply a 13C mole fraction for mixed-isotope diamond films several percent higher than that reported previously. The corrected carbon-13 mole fractions of polycrystalline diamond films and homoepitaxial films grown on (100), (111), and (110) natural diamond substrates were each equal, within experimental error, to that of the methane above the substrate but significantly different from that of gas-phase acetylene. As the 13C mole fractions of methyl radical and methane should be nearly identical, the methyl radical is concluded to be the predominant growth precursor regardless of the crystallographic orientation of the diamond substrate.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5930-5940 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present atomic force microscopy images of diamond films grown by chemical vapor deposition epitaxially on diamond (100), (110), and (111) substrates. The films were grown from 0.2%–1.6% mixtures of CH4 and C2H2 in H2 in a hot-filament reactor at a total pressure of 25 Torr. The substrate and filament temperatures were held at 810–1000 and 2000–2150 °C, respectively. A (100)-oriented diamond film grown with 0.3% CH4 at a substrate temperature of 810 °C was rough on the μm scale, exhibiting pyramidal features, terraces, and penetration twins, while films grown at higher substrate temperatures and hydrocarbon flow rates were smooth on the nm scale and showed evidence of a (2×1) reconstruction. A (110)-oriented film was very rough on the μm scale but nearly atomically smooth on the 0.5–5 nm scale and exhibited local slopes higher than 40° with no evidence of faceting. A film grown on a diamond (111) substrate underwent spontaneous fracture due to tensile stress and exhibited a roughness of ≈10–50 nm on the ≈100 nm lateral scale in regions far away from any cracks. The implications of the morphological features for diamond growth mechanisms are discussed.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5606-5609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlations between structural quality and superconducting behavior in 1000-A(ring)-thick Ba2YCu3O7−δ (BYCO) films grown on LaAlO3(100) from the coevaporation of BaF2, Y, and Cu, followed by an optimized ex situ annealing process are reported. Epitaxial films with smooth, laminar morphology and excellent crystallinity can be grown to have critical current density Jc values nearly identical to single crystals. This finding contrasts with the typical observation that Jc values in thin films of BYCO are very high compared to those of single crystals. This is attributed to a greater density of flux pinning sites due to structural defects within the films. The most crystalline films presented here have penetration length λ∼2000 A(ring) with temperature dependencies described well by the Bardeen–Cooper–Schrieffer (BCS) theory. Material disorder of two types can be controlled by the high-temperature stage Ta of the annealing process. The first type is point defects and dislocations the same size or smaller than the coherence length ξab, which Rutherford backscattering/channeling suggests decrease in number with increasing Ta. The second is crevices, pinholes, and microcracks, which are at least one to two orders of magnitude larger than ξab. At Ta 〈 850 °C, crevices, which create areas of nonuniform thickness, occur due to incomplete epitaxial growth and correlate with the presence of weak links. Hence film resistivity is high, Tc is low, and λ is large. As Ta is increased, the film morphology becomes smoother and all electrical properties improve, except for Jc in nonzero applied magnetic fields, since the improved epitaxy correlates with reduced flux pinning. By Ta= 900 °C, the BYCO films are similar to single crystals in both cation alignment and Jc behavior. Above this annealing temperature, pinholes and microcracks develop and increase in both size and density with increasing Ta. Although these relatively large defects do not act as weak links, they do affect magnetic screening (and hence λ), to result in an anomalous temperature dependence that masks the intrinsic BCS behavior.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 780-782 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs delta-doped tunneling diode having a δn+-i-δp+-i-δn+ structure is investigated. A negative differential resistance behavior with peak-to-valley ratio as high as 3.1 and a peak current density of 3 kA/cm2 is exhibited when the device is operated at room temperature. It becomes resistor-like at the temperature of 77 K. Theoretical analysis, based on envelope wave function approximation, indicates that the resonant interband tunneling process is responsible for room-temperature characteristics, while the band-gap widening effect is responsible for low-temperature behavior. Furthermore, the dependence of device performance on such structure parameters as doping level, and the physical dimension of the delta-doped region, etc., is discussed, and found to agree well with experimental results.
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