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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 113 (1991), S. 6291-6293 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1915-1917 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successive ion beam milling at grazing angles of a 2400-A(ring)-thick, c-axis-oriented YBa2Cu3O7 film is shown to give smooth films which superconduct at thicknesses on the order of tens of angstroms. The thinning and polishing process is characterized at successive milling stages using resistance transitions, x-ray analysis, scanning electron microscopy, and Rutherford backscattering and channeling analysis of composition and surface quality. As thinning proceeds, scanning electron microscopy and diffraction features associated with a-axis texture are removed and crystalline quality, as measured by x rays and channeling, markedly improves.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 16516-16518 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 23 (1993), S. 159-191 
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2165-2167 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fundamental parameter of sample quality in epitaxial films of high Tc oxides is the effective penetration depth λ(parallel) of the superconducting sheet. A contactless audio-frequency method is described, in which an epitaxial YBa2Cu3O7 film is sandwiched between sets of stacked coils, and the procedure is given for computing the complex sheet impedance and hence λ(parallel) from the change in mutual inductance produced by screening currents in the film. Temperature dependence of the complex impedance is presented.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlations between structural quality and superconducting behavior in 1000-A(ring)-thick Ba2YCu3O7−δ (BYCO) films grown on LaAlO3(100) from the coevaporation of BaF2, Y, and Cu, followed by an optimized ex situ annealing process are reported. Epitaxial films with smooth, laminar morphology and excellent crystallinity can be grown to have critical current density Jc values nearly identical to single crystals. This finding contrasts with the typical observation that Jc values in thin films of BYCO are very high compared to those of single crystals. This is attributed to a greater density of flux pinning sites due to structural defects within the films. The most crystalline films presented here have penetration length λ∼2000 A(ring) with temperature dependencies described well by the Bardeen–Cooper–Schrieffer (BCS) theory. Material disorder of two types can be controlled by the high-temperature stage Ta of the annealing process. The first type is point defects and dislocations the same size or smaller than the coherence length ξab, which Rutherford backscattering/channeling suggests decrease in number with increasing Ta. The second is crevices, pinholes, and microcracks, which are at least one to two orders of magnitude larger than ξab. At Ta 〈 850 °C, crevices, which create areas of nonuniform thickness, occur due to incomplete epitaxial growth and correlate with the presence of weak links. Hence film resistivity is high, Tc is low, and λ is large. As Ta is increased, the film morphology becomes smoother and all electrical properties improve, except for Jc in nonzero applied magnetic fields, since the improved epitaxy correlates with reduced flux pinning. By Ta= 900 °C, the BYCO films are similar to single crystals in both cation alignment and Jc behavior. Above this annealing temperature, pinholes and microcracks develop and increase in both size and density with increasing Ta. Although these relatively large defects do not act as weak links, they do affect magnetic screening (and hence λ), to result in an anomalous temperature dependence that masks the intrinsic BCS behavior.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3475-3477 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High doses (1015–5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350 °C and annealed at 700–1000 °C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250 K. At low doses, the implanted led to a buried band of defects at the end of the ion range. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 302-304 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Four-terminal ac impedance measurements have been used to characterize Al–Al2O3–Al tunnel-junction capacitors over the frequency range of 10 Hz–100 kHz. The insulating barriers are thin enough to assure that the response can be modeled by a frequency-dependent interface capacitance in parallel with a frequency-independent tunnel junction resistor R0. The data reveal no sign of loss peaks down to 10 Hz and the impedance curves for a single junction, annealed to give different tunnel-junction resistance, collapse onto a single curve when R0 is used as a scaling parameter. The loss mechanism is ascribed to interface traps and is found to give an unusual asymptotic phase angle response when the real and imaginary parts of the complex capacitance are plotted against each other. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3452-3454 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High concentrations (3–5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 °C). Subsequent annealing at 700 °C produced apparent ferromagnetic behavior up to ∼250 K for the 3 at. % sample. Selected area diffraction patterns did not reveal the presence of any other phases in the Fe-implanted region. The direct implantation process appears promising for examining the properties of magnetic semiconductors with application to magnetotransport and magneto-optical devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2842-2844 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resolution of electrostatic force microscopy (EFM) is enhanced when multiwalled carbon nanotubes are used as extensions on conventional silicon cantilevers. Multiwalled nanotubes provide robust, high aspect ratio, conducting tips that minimize topographic dependence of gradients in the capacitance between the tip/cantilever and the substrate. Comparison of simultaneously acquired topographical and EFM images taken at the intersection of overlapping electrodes of electrically biased Al–Al2O3–Al tunnel junctions confirm the improved performance. This enhancement enables us to determine the surface contact potential differences between individual nanotubes within a bundle with resolutions of 5 mV and 10 nm. © 1999 American Institute of Physics.
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