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  • 1
    Electronic Resource
    Electronic Resource
    Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3403-3409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Open-volume defects introduced in Si(100) crystals during fluorine implantation were investigated by variable-energy positron beam depth profiling. The behavior of the implantation-induced lattice defects upon high temperature annealing and their role in the surface-oriented diffusion of F impurities were examined. The defects become mobile and undergo recovery at temperatures below 550 °C, i.e., well before the onset of fluorine diffusion as seen by secondary ion mass spectroscopy (SIMS) profiling. This behavior suggests that after irradiation and annealing the fluorine occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two-step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by a rapid diffusion of the interstitial F and the vacancy through the crystal to the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357470
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  • 2
    Electronic Resource
    Electronic Resource
    Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4584-4588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of annealing in vacuum and in controlled low-pressure oxygen ambient on breakdown characteristics of thin (∼500 A(ring)) SiO2 films on Si (100) has been studied under ultrahigh vacuum conditions for temperatures 750–900 °C and controlled O2 partial pressures in the range 10−6–5×10−2 Torr. Dark current-voltage measurements on Al-gate capacitors show that vacuum annealing causes low-field self-healing breakdown by the formation of local defects in the oxide. This degradation of breakdown characteristics is suppressed by the presence of sufficient O2 in the annealing ambient, such that the O2 partial pressure must exceed the SiO equilibrium partial pressure by a factor of ∼100×. This behavior suggests that low-field breakdown is a consequence of oxide decomposition (Si+SiO2→2SiO↑) at defects in the oxide, which is suppressed by reoxidation of the volatile SiO reaction product.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338365
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  • 3
    Electronic Resource
    Electronic Resource
    Hole trapping in SiO2 films annealed in low-pressure oxygen atmosphere (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 925-930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of hole traps in thermal SiO2 films on Si(100) has been characterized as a function of O2 partial pressure in the annealing ambient in order to address the chemistry associated with the hole traps. The annealing treatments were carried out in ultrahigh vacuum (base pressure∼5×10−9 Torr) without and with the presence of an intentional (controlled) partial pressure of O2 in the range 10−6–5×10−2 Torr. Hole trapping was characterized using the avalanche injection technique. Annealing in vacuum results in an increased hole trapping rate similar to that observed for high-temperature (T〉900 °C) furnace annealing in N2. The hole trapping is reduced upon annealing in O2 containing ambients if the O2 partial pressure exceeds the SiO vapor pressure by at least one order of magnitude. Thus, the presence of sufficient O2 in the postoxidation annealing process suppresses hole trapping. These results appear analogous to the reduction in low-field breakdown when O2 is present, as recently reported. In both cases, it is likely that the O2 serves to reoxidize a defect related SiO product which is generated by Si-SiO2 reaction at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339702
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  • 4
    Electronic Resource
    Electronic Resource
    Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5606-5609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350540
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  • 5
    Electronic Resource
    Electronic Resource
    Positron annihilation at the Si/SiO2 interface (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 530-532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350694
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  • 6
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of rough-morphology silicon films over a broad temperature range (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1387-1389 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of rough polycrystalline silicon films has been achieved on SiO2 surfaces over a broad temperature range (≥100 °C) using SiH4 chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over a broad temperature range is attributed to the combination of nucleation-controlled initial growth (on SiO2) and domination of growth by surface reaction (cf. gas phase).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109685
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  • 7
    Electronic Resource
    Electronic Resource
    Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3035-3037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth kinetics for SiH4 chemical vapor deposition of Si on SiO2 at low temperature (500–600 °C) have been revealed using rapid thermal UHV-CVD, together with in situ H2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reaction is heterogeneous, i.e., dominated by surface reaction. Below ∼0.7 monolayer Si coverage, the growth kinetics is rapid (∼t4), indicating spontaneous generation of new nuclei, while at higher coverage Si island growth dominates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108001
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  • 8
    Electronic Resource
    Electronic Resource
    Anomalous diffusion of fluorine in silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1310-1312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of ion implanted F in Si has been studied by the use of secondary ion mass spectroscopy and thermal desorption spectroscopy. In the dose range studied (below amorphization threshold), F exhibits an anomalous out-diffusion behavior which is characterized by the depletion of F in Si substrate at temperatures ≥550 °C with complete suppression of diffusion deeper into the bulk of Si. F species which migrate to the surface react with native oxide and Si to form volatile Si oxyfluoride and Si fluoride, which then evaporate from the surface. There is clear evidence that the formation of Si oxyfluoride correlates strongly with the thermally activated anomalous migration of F. While the driving force for the anomalous F migration has not yet been identified, it appears that the electric field is not a dominant mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107575
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  • 9
    Electronic Resource
    Electronic Resource
    Centroid shift of γ rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 86-88 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using metal-oxide-semiconductor (MOS) structures, the shift of centroid (peak) of γ-ray energy distributions emitted from positron annihilation has been measured as a function of incident positron energy. The Doppler centroid shift was found to be consistent with the positron motion in the MOS depletion region. The results are described by a one-dimensional positron diffusion model, and provide information on "effective'' positron diffusion length under applied field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104399
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  • 10
    Electronic Resource
    Electronic Resource
    Nondestructive detection of titanium disilicide phase transformation by picosecond ultrasonics (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2700-2702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that picosecond ultrasonics is a sensitive nondestructive probe of the formation of TiSi2 from the reaction of titanium films on silicon annealed at temperatures of 300–800 °C. From the measured change in optical reflectivity, the responses due to electronic excitation, acoustic echoes, and thermal coupling to the underlying Si are resolved. The results show significant differences in the electronic response and the ultrasonic echo pattern before and after the structural phases C49 and C54 TiSi2 are formed. The longitudinal sound velocity is measured to be (8.3±0.2)×105 cm/s for C49 TiSi2, and about 5% lower for the C54 phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108114
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