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  • 1995-1999  (110)
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  • 1
    Electronic Resource
    Electronic Resource
    Folded waveguide gyrotron traveling-wave-tube amplifier (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 915-922 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compact, low cost gyrotron traveling-wave-tube (gyro-TWT) amplifier capable of producing high-power, broadband, millimeter wave radiation is reported. The interaction circuit is a periodic, magnetic field plane (H plane) bend, transverse folded waveguide employed with a high-power axis-encircling electron beam. Transverse beam modulation and wave amplification in the folded waveguide gyro-TWT are observed in both linear theory and large signal simulations. Calculations from an equivalent circuit model and a three-dimensional electromagnetic code predict a mode coalescing of the first stop-band in a periodic structure. The mode coalescing is verified from experimental measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871372
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  • 2
    Electronic Resource
    Electronic Resource
    A calibration method of a radio frequency magnetic probe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3774-3775 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We demonstrate a simple calibration method of a rf magnetic probe by utilizing a two port network analysis method. The sensitivity (V/G) of the probe is determined by measuring the scattering parameters of S11 and S21. The magnetic field generated by the Helmholtz coil is calculated from S11 and the probe sensitivity is obtained from S21. The measured probe sensitivity is 0.1–0.6 V/G in the frequency range of 1–15 MHz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149951
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  • 3
    Electronic Resource
    Electronic Resource
    A versatile Czochralski crystal growth system with automatic diameter control (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3939-3942 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile Czochralski crystal pulling system with automatic diameter control for the growth of nonlinear optical oxide crystals is discussed. Pure and doped bulk single crystals of bismuth silicon oxide (Bi12SiO20) have been successfully grown using this system. The system consists of a regular Czochralski type pulling system with provision for continuous weighing of the growing crystal to provide feedback for power control. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145398
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  • 4
    Electronic Resource
    Electronic Resource
    Prediction of solid-state amorphizing reaction using effective driving force (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 983-987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is proposed that the nucleation and growth of the amorphous phase through the solid-state amorphizing reaction in thin-film diffusion couples can be predicted by using the concept of effective driving force. The effective driving force consists of two factors: (i) the thermodynamic driving force given by maximum free-energy difference between the physical mixture of binary elements and the amorphous phase (ΔGmax), and (ii) the kinetic factor given by a ratio of the effective radius of the interstitial site in the host matrix to the atomic radius of the diffusing species (Rm/d). From the comparison of reported experimental results, it is shown that the criterion of effective driving force holds well for predicting the nucleation of the amorphous phase in metal/silicon systems as well as that of metal/metal systems. In addition, the concept of effective driving force holds well for predicting the growth tendency of the amorphous phase in metal/silicon systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360292
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  • 5
    Electronic Resource
    Electronic Resource
    Elliptical grain growth in the solid-phase crystallization of amorphous SrBi2Ta2O9 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2933-2935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During the crystallization process of amorphous SrBi2Ta2O9 (SBT) thin films at 800 °C in a dry O2 ambient, we have found elliptical nuclei in the initial nucleation state. These elliptical grains are preferentially oriented to [110] direction in the [11¯0] direction of projection. Elliptical grain growth keeps [110] as increasing the annealing time at 800 °C. Transmission electron microscopy and selected-area electron diffraction pattern indicate that the origin of 〈110〉-oriented crystallization is due to the highest ionic packing (001) SBT plane which includes TaO6 octahedra and the nearest bonding direction of TaO6 octahedra in SBT plane is the 〈110〉 direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123970
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  • 6
    Electronic Resource
    Electronic Resource
    Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using metalorganic chemical vapor deposition assisted by a nitrogen radical irradiation generated by rf plasma, we have enhanced the quality and the step coverage of titanium nitride barrier metals for the contact holes with a high aspect ratio and a submicron radius. Electrical resistivity measurements show that the film resistivity improves by a factor of five as the proper nitrogen irradiation has been applied. The step coverage in a contact hole with 0.4 μm diam and 3:1 aspect ratio has been improved from 50% to 80% by applying nitrogen plasma, clearly demonstrating the effectiveness of this technique in the conformal deposition of barrier metals for the ultra-large scale integration. The incident nitrogen radical is believed to play several roles, such as the enhancement of surface migration rate of molecules and the reduction of the amount of hydrocarbon incorporating into the film during the deposition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116190
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  • 7
    Electronic Resource
    Electronic Resource
    Concentration dependent photoluminescence of Te-doped In0.5Ga0.5P layers grown by liquid phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4024-4027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) of Te-doped In0.5Ga0.5P epilayers grown by the liquid phase epitaxy technique has been investigated as a function of carrier concentration. The PL results are interpreted using a model taking into account nonparabolicity of the conduction band. Both the band filling as well as band tailing due to the Coulomb interaction of free carriers with ionized impurities and band shrinkage due to the exchange interaction between free carriers are considered in order to properly portray the observed features of the PL spectra. The theoretical calculations are in satisfactory agreement with the observed PL results. The PL line shape is well explained by a direct transition with a simple k-selection rule up to a carrier concentration of 2.0 ×1018 cm−3. Above the carrier concentration of 2.0 ×1018 cm−3, on the other hand, it is properly interpreted in terms of non-k-conserving transitions that arise from the indirect recombination of electrons in a highly filled conduction band. It was found that a concentration dependent gap shrinkage due to the exchange interaction in Te-doped In0.5Ga0.5P at 17 K is described by the relation Ece=2.34×10−8 n1/3 (eV). The concentration dependent effective mass has also been calculated using Kane's three band model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365754
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  • 8
    Electronic Resource
    Electronic Resource
    Rubbed polyimide films studied by scanning force microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2218-2219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surfaces of rubbed polyimide films for aligning liquid crystal have been studied by atomic force microscopy. The unrubbed films consisted of randomly distributed polyimide clusters of different sizes. On the rubbed surface, however, the clusters are aligned in long chains along the rubbing direction. The cluster chains were separated by about 100 nm for small rubbing strength. For higher strength the cluster chains coalesced into wider ones. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113172
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of 0.1 μm gate aperture Mo-tip field-emitter arrays using interferometric lithography (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3050-3052 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fabrication process has been developed which enables us to make matrix-addressable Mo-tip field-emitter arrays (FEAs) with 0.1 μm gate aperture and 0.2 μm tip-to-tip distance. An interferometric lithography combined with a trilevel resist process which uses an imaging resist layer, a silicon oxide interlayer, and antireflective coating has been implemented to fabricate the periodic structure of the gated FEAs in an addressable matrix. The matrix-addressable FEAs have shown a turn-on voltage as low as 13 V and an emission current density of 17 mA/cm2 at a gate voltage of 30 V. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124061
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  • 10
    Electronic Resource
    Electronic Resource
    On a critical case of internal solitary waves in a two-layer fluid (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 2804-2806 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This Brief Communication answers an unsettled question pointed out by Peters and Stoker [Commun. Pure Appl. Math 13, 115 (1960)] with regard to a critical case of a two-layer fluid flow with a free surface supported by a horizontal rigid bottom. In the critical case the coefficient of the nonlinear term in the Korteweg–deVries (KdV) equation vanishes and the KdV theory models only a parallel flow. By using higher-order asymptotic expansion, an extended and a modified KdV equation are derived and internal solitary waves and transition waves in the critical case are found. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869388
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