ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using metalorganic chemical vapor deposition assisted by a nitrogen radical irradiation generated by rf plasma, we have enhanced the quality and the step coverage of titanium nitride barrier metals for the contact holes with a high aspect ratio and a submicron radius. Electrical resistivity measurements show that the film resistivity improves by a factor of five as the proper nitrogen irradiation has been applied. The step coverage in a contact hole with 0.4 μm diam and 3:1 aspect ratio has been improved from 50% to 80% by applying nitrogen plasma, clearly demonstrating the effectiveness of this technique in the conformal deposition of barrier metals for the ultra-large scale integration. The incident nitrogen radical is believed to play several roles, such as the enhancement of surface migration rate of molecules and the reduction of the amount of hydrocarbon incorporating into the film during the deposition. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116190
