ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, an application of wide-gap updoed-Al0.22Ga0.78As bulk to perform thefield-plate gate (FP-gate) on Al0.22Ga0.78As/In16Ga84As/Al0.22Ga0.78As DH-HEMTs was investigated.The simulated FPG-devices with a bulk thickness of 1200 Å, exhibit an excellent dispersingproperty to the electric field peak under gate electrode near to drain side, hence, the breakdowncharacteristics were effectively improved. Measured gate-diode performance of FPG-devicepresents a higher breakdown voltage (VBR) of -25.5 V than devices with single recess (SRG-device).Enhancement of device breakdown is contributive to microwave power performances. At 2.4 GHzload-pull measurement of studied devices which were biased at class AB operation, the saturatedoutput power (POUT), power gain (GP) and power-added efficiency (PAE) were 13.06 dBm (202mW/mm), 12.8 db and 47.3% for FPG-device. These measured results of SRG-device were 10.3dBm(107 mW/mm), 13.2 db and 38.5%, According to the simulated results, FPG-devicesstructuring with a bulk layer exhibit excellent performance for high breakdown and microwavepower operation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.47-50.419.pdf
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