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  • 1
    Electronic Resource
    Electronic Resource
    Application of a triple-well superlattice emitter structure to GaAs switching device (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4414-4416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new GaAs switching device with a triple-well superlattice emitter structure, prepared by molecular beam epitaxy, has been fabricated and demonstrated. An S- and N-shaped negative-differential-resistance (NDR) phenomenon, attributed primarily to the avalanche multiplications process and resonant-tunneling effect, were observed simultaneously when a proper collector-emitter voltage (VCE) was applied. The operation temperature is known from the experimental results to play an important role on the influence of the NDR behaviors. A transistor action with a common-emitter current gain of over 36 was also achieved at 300 K when a control current was employed to the base electrode. This device exhibited a significantly regenerative switching phenomenon both at room temperature and low temperature if a −VCE voltage was used. The proposed structure consequently has good potential for switching and quantum functional device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352207
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  • 2
    Electronic Resource
    Electronic Resource
    Heterostructure optoelectronic switch with lightcontrollable S-shaped negative differential resistance (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1010-1012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A heterostructure optoelectronic switch, grown by molecular beam epitaxy, has been fabricated. Owing to the carrier confinement and avalanche multiplication in the transport mechanism, S-shaped negative-differential-resistance performances are observed in the current–voltage (I–V) characteristics. The device shows a flexible optical function related to the potential barrier height and breakdown voltage controllable by incident light. The dependence of the I–V characteristics on illumination is attributed to the carrier confinement effect in the device operation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120949
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of a GaAs-InGaAs delta-doped quantum-well switch (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8615-8617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new delta-doped quantum well negative-differential-resistance (NDR) switch, grown by molecular beam epitaxy, has been fabricated and demonstrated. A delta-doped sheet [δ(p+)], located at the center of InGaAs quantum well, provides a potential barrier for electron injection. When a sufficiently high voltage bias is applied, an interesting S-shaped NDR phenomenon can be observed due to the avalanche multiplication and potential redistribution process. From experimental results, it is known that the environmental temperature plays an important role on the NDR performance. The influence of temperature on the device performance is studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353392
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2782-2785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A switching device, with a p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well, has been fabricated and demonstrated. An N-shaped negative-differential-resistance phenomenon resulting from the resonant-tunneling effect through the miniband is observed in the current-voltage measurement. From the experimental results, it is seen that the temperature plays an important role in device operation. The influences of temperature upon the peak-current voltage, valley-current voltage, peak-current density, and valley-current density are studied and discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358748
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  • 5
    Electronic Resource
    Electronic Resource
    Optoelectronic behavior in a double-barrier-emitter triangular barrier switch (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 672-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, a triangular-barrier and a double-barrier structure were integrated to form a bi-directional switching device. In the center of the triangular-barrier structure, a delta-doped (δ-doped) quantum well was inserted to enhance the carrier accumulation. Owing to the resonant tunneling through the double barrier and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance phenomena occurred in the current–voltage (I–V) characteristics under normal and reverse operation modes, respectively. The device characteristics also showed variations from dark to illumination conditions.© 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425444
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  • 6
    Electronic Resource
    Electronic Resource
    GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2685-2687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, a new switching device having a p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111491
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  • 7
    Electronic Resource
    Electronic Resource
    Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1441-1443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/AlGaAs double heterostructure-emitter bipolar transistor (DHEBT), prepared by molecular beam epitaxy, has been fabricated with improved performance. The employment of emitter edge-thinning technique has caused a significant suppression of the surface leakage current. A common-emitter current gain of up to 140 with a negligible collector offset voltage (∼40 mV) was obtained. The undesired knee-shaped characteristics and the reachthrough effect, always observed on the conventional double heterojunction bipolar transistor (DHBT), were eliminated. An interestingly bi-directional and three-terminal controlled switching phenomena may also be exhibited by this device. This gives a substantial flexibility in the device and circuit applications. The electrical performance is believed to be further improved with an adequate design to minimize the area difference between emitter-base (EB) and the base-collector (BC) junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107563
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  • 8
    Electronic Resource
    Electronic Resource
    New AlGaAs/GaAs double heterostructure-emitter bipolar transistor prepared by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 362-364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new AlGaAs/GaAs double heterostructure-emitter bipolar transistor (DHEBT) prepared by molecular beam epitaxy (MBE) has been demonstrated. Due to the symmetric structure with respect to the base layer, the device would operate as a bi-directional transistor and switch. The common-emitter current gain for up to 18, with an offset voltage smaller than 0.1 V, is obtained. Furthermore, the undesired knee-shaped characteristics and the reachthrough effect observed in the conventional double heterojunction bipolar transistor (DHBT) are avoided. The bi-directional operations of this structure give a significant flexibility in the circuit applications. It is believed that with adequate adjustments on structural parameters, especially in the minimization of the base-collector junction area, a more symmetric and an improved electrical performance may be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106657
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  • 9
    Electronic Resource
    Electronic Resource
    Bistable GaAs–InGaP triangular-barrier optoelectronic switch (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1219-1221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A bistable GaAs–InGaP triangular-barrier optoelectronic switch (TBOS), grown by metalorganic chemical vapor deposition, was fabricated. By introducing avalanche multiplication and carrier confinement into the device operation, S-shaped negative-differential-resistance performances are observed in the current–voltage (I–V) characteristics under normal and reverse operation modes. The TBOS shows a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the carrier transport mechanism on the illumination was investigated. The I–V characteristics at different temperatures were also discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119856
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  • 10
    Electronic Resource
    Electronic Resource
    A multiple-negative-differential-resistance switch with double InGaP barriers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4185-4187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs-InGaP switch has been fabricated and demonstrated. In this device, double i-InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S-shaped negative-differential- resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S-shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple-valued logic applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116980
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