ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is firstdemonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relativelylarge, the addition of a δ-doped sheet between two spacer layers at the emitter-base junctioneffectively eliminates the potential spike and increases the confined barrier for electrons,simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV areachieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. Theproposed device could be used for linear amplifiers and low-power complementary integratedcircuit applications
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.47-50.383.pdf
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