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  • 1
    Electronic Resource
    Electronic Resource
    Characteristics of a GaAs-InGaAs delta-doped quantum-well switch (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8615-8617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new delta-doped quantum well negative-differential-resistance (NDR) switch, grown by molecular beam epitaxy, has been fabricated and demonstrated. A delta-doped sheet [δ(p+)], located at the center of InGaAs quantum well, provides a potential barrier for electron injection. When a sufficiently high voltage bias is applied, an interesting S-shaped NDR phenomenon can be observed due to the avalanche multiplication and potential redistribution process. From experimental results, it is known that the environmental temperature plays an important role on the NDR performance. The influence of temperature on the device performance is studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353392
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  • 2
    Electronic Resource
    Electronic Resource
    A new functional, resonant-tunneling bipolar transistor with a superlattice emitter (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 485-489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new resonant-tunneling bipolar transistor (RBT), in which electrons are injected from emitter to base by resonant-tunneling through the minibands in the i-AlGaAs/n+-GaAs superlattice emitter. The main feature of the device is the significant double negative-differential-resistance both at room temperature and low temperature. Two high peak-to-valley (PV) current ratios of 4:1 and 2.6:1 were obtained at 77 K. In the common emitter configuration, bistable output currents exist as controlled by the base-emitter voltage at critical values of VBE = 2.5 V and VBE = 3 V, respectively. In addition, two negative transconductance operation regions were obtained when the base-emitter voltage was applied. Yet, three different transistor action regions occur as the control base current is being applied. For base currents that are not high enough to bring the base-emitter junction to flat-band condition, common-emitter current gain up to 65 was obtained. This is the highest value ever reported in an RBT device using GaAs based materials. As control base current increases sufficiently to cause the base-emitter voltage drop beyond the flat-band condition, two different transistor action regions with smaller current gains of 38 and 35 are found. Furthermore, the first peak current is nearly equal to the second peak current and much larger than the second valley current. Thus the proposed device is attractive for multiple-valued logic circuits and frequency multipliers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350253
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of the potential spike on heterostructure-emitter bipolar transistor (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1063-1066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of potential spike on the transport properties of heterostructure-emitter bipolar transistor (HEBT) has been demonstrated. The potential spike is attributed primarily to the extended depletion region adjacent the p+ GaAs base layer. Due to the existence of potential spike, the electrical properties including conducting current, current gain, and offset voltage, etc., are degraded seriously. The knee-shaped characteristics and strong reachthrough effect are observed. Consequently, the design of the structural parameters, such as GaAs emitter (collector) width adjacent p+ base, plays an important role of high-performance HEBT devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347372
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  • 4
    Electronic Resource
    Electronic Resource
    High-performance camel-gate field effect transistor using high-medium-low doped structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2636-2638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an improved camel-gate field effect transistor using a high-medium-low doped channel. A 1000-A(ring)-thick n=1×1017 cm−3 GaAs layer is employed to form the camel gate, which prevents the planar-doped barrier from being dropped abruptly. In addition to transition channel, a thin (200 A(ring)) heavily doped (n=5×1017 cm−3) GaAs layer works as the main active channel to enhance the current drivability and transconductance. For our 1.5×100 μm2 device, the maximum current density of over 850 mA/mm was obtained. Moreover, an enhanced voltage-independent transconductance was also observed. Generally, the device exhibits a transconductance of 220 mS/mm which is compatible to that of MESFETs and is two- or threefold to that of reported camel-gate FETs. In addition, the proposed device demonstrates a large gate voltage swing for high transconductance operation. Due to the excellent device performance, our devices do hold promise for both large signal and digital circuits application, simultaneously. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114320
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  • 5
    Electronic Resource
    Electronic Resource
    Application of a triple-well superlattice emitter structure to GaAs switching device (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4414-4416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new GaAs switching device with a triple-well superlattice emitter structure, prepared by molecular beam epitaxy, has been fabricated and demonstrated. An S- and N-shaped negative-differential-resistance (NDR) phenomenon, attributed primarily to the avalanche multiplications process and resonant-tunneling effect, were observed simultaneously when a proper collector-emitter voltage (VCE) was applied. The operation temperature is known from the experimental results to play an important role on the influence of the NDR behaviors. A transistor action with a common-emitter current gain of over 36 was also achieved at 300 K when a control current was employed to the base electrode. This device exhibited a significantly regenerative switching phenomenon both at room temperature and low temperature if a −VCE voltage was used. The proposed structure consequently has good potential for switching and quantum functional device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352207
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3436-3438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an AlxGa1−xAs/GaAs heterojunction bipolar transistor (HBT) with a high Al mole fraction of x=0.45. A digital graded superlattice emitter, forming a step-wise graded composition, is used to smooth out the potential spike resulting from a large conduction-band offset. HBT's with such a digital graded emitter as a passivation layer exhibit a small offset voltage of 55 mV, a low turn-on voltage of 0.87 V and a current gain as high as 400. Effects of wet-oxidation treatment on fabricated HBT's are also investigated. Experimental results reveal that the studied HBT's exhibit reduced collector currents at a fixed base current in the early stage of the wet-oxidation treatment. However, better surface passivation and higher current gain are available after an appropriate wet-oxidation treatment is used to reduce base current. We qualitatively modeled these behaviors by introducing a concept of built-in field along the graded emitter. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1473861
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  • 7
    Electronic Resource
    Electronic Resource
    Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2155-2157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic high electron-mobility transistors have been successfully fabricated and demonstrated in both direct-current and alternating-current performance. Together with a wide-gap Ga0.51In0.49P gate insulator, a gate-to-drain breakdown voltage of 33 V is further improved to over 40 V by selectively removing mesa sidewalls. The transconductance and current density of a 1×100 μm2 device at room temperature (77 K) are 90 (120) mS/mm and 646 (780) mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. These are consistent with 1 μm gate devices when the parasitic capacitance is reduced by selectively removing mesa sidewalls. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123785
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of the anomalous current–voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 404-406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/n+-In0.2Ga0.8As/GaAs doped-channel field-effect transistor structure has been fabricated and studied. A typical transistor performance with a threshold voltage of about −3.0 V and transconductance of up to 160 mS/mm is obtained in the lower gate-source voltage (VGS 〈−1.0 V) regime. However, for some devices, the three-terminal-controlled N-shaped negative-differential-resistance (NDR) behavior is observed at the saturation regime of current–voltage characteristics under higher gate-source bias (VGS≥−1.0 V) condition. The interesting NDR phenomenon is believed to be attributed to the real-space transfer and deep-level electron trapping effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114643
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  • 9
    Electronic Resource
    Electronic Resource
    Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1441-1443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/AlGaAs double heterostructure-emitter bipolar transistor (DHEBT), prepared by molecular beam epitaxy, has been fabricated with improved performance. The employment of emitter edge-thinning technique has caused a significant suppression of the surface leakage current. A common-emitter current gain of up to 140 with a negligible collector offset voltage (∼40 mV) was obtained. The undesired knee-shaped characteristics and the reachthrough effect, always observed on the conventional double heterojunction bipolar transistor (DHBT), were eliminated. An interestingly bi-directional and three-terminal controlled switching phenomena may also be exhibited by this device. This gives a substantial flexibility in the device and circuit applications. The electrical performance is believed to be further improved with an adequate design to minimize the area difference between emitter-base (EB) and the base-collector (BC) junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107563
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  • 10
    Electronic Resource
    Electronic Resource
    Performance enhancement in a metal-insulator-semiconductor–like pseudomorphic transistor by utilizing an n−-GaAs/n+-In0.2Ga0.8As two-layer structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1524-1526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high performance metal-insulator-semiconductor–like pseudomorphic field-effect transistor utilizing an n−-GaAs/n+-In0.2Ga0.8As two-layer structure was fabricated and demonstrated. The n−-GaAs layer is used as the Schottky contact layer whereas the n+-In0.2Ga0.8As quantum well is employed as the active channel. Due to the excellent properties of the InGaAs layer and carrier confinement effect at the In0.2Ga0.8As–GaAs heterointerface, the device under study shows the advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operation, and ease of fabrication. For a 2×100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum extrinsic transconductance of 230 mS/mm, and a very wide gate voltage range larger than 3 V with the extrinsic transconductance higher than 200 mS/mm are obtained. Therefore, the device has great potential for use in high speed, high power, and large input signal circuit applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113634
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