ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A GaAs/n+-In0.2Ga0.8As/GaAs doped-channel field-effect transistor structure has been fabricated and studied. A typical transistor performance with a threshold voltage of about −3.0 V and transconductance of up to 160 mS/mm is obtained in the lower gate-source voltage (VGS 〈−1.0 V) regime. However, for some devices, the three-terminal-controlled N-shaped negative-differential-resistance (NDR) behavior is observed at the saturation regime of current–voltage characteristics under higher gate-source bias (VGS≥−1.0 V) condition. The interesting NDR phenomenon is believed to be attributed to the real-space transfer and deep-level electron trapping effect. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114643
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