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  • Other Sources  (50)
  • 2015-2019  (31)
  • 1990-1994  (19)
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  • 1
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    Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells (1994)
    In:  CASI
    Details
    Publication Date: 2004-12-03
    Description: InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.
    Keywords: Energy Production and Conversion
    Type: Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13); 149-158; NASA-CP-3278
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  • 2
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    Electrochemical characterization of p(+)n and n(+)p diffused InP structures (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The relatively well documented and widely used electrolytes for characterization and processing of Si and GaAs-related materials and structures by electrochemical methods are of little or no use with InP because the electrolytes presently used either dissolve the surface preferentially at the defect areas or form residual oxides and introduce a large density of surface states. Using an electrolyte which was newly developed for anodic dissolution of InP, and was named the 'FAP' electrolyte, accurate characterization of InP related structures including nature and density of surface states, defect density, and net majority carrier concentration, all as functions of depth was performed. A step-by-step optimization of n(+)p and p(+)n InP structures made by thermal diffusion was done using the electrochemical techniques, and resulted in high performance homojunction InP structures.
    Keywords: SOLID-STATE PHYSICS
    Type: Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12); p 33-42
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  • 3
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    Radiation effects in heteroepitaxial InP solar cells (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.
    Keywords: SPACECRAFT PROPULSION AND POWER
    Type: Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12); p 16-22
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  • 4
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    Progress in p(+)n InP solar cells fabricated by thermal diffusion (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The performance results of our most recently thermally diffused InP solar cells using the p(+)n (Cd,S) structures are presented. We have succeeded in fabricating cells with measured AMO, 25 C V(sub oc) exceeding 880 mV (bare cells) which to the best of our knowledge is higher than previously reported V(sub oc) values for any InP homojunction solar cells. The cells were fabricated by thinning the emitter, after Au-Zn front contacting, from its initial thickness of about 4.5 microns to about 0.6 microns. After thinning, the exposed surface of the emitter was passivated by a thin (approximately 50A) P-rich oxide. Based on the measured EQY and J(sub sc)-V(sub oc) characteristics of our experimental high V(sub oc) p(+)n InP solar cells, we project that reducing the emitter thickness to 0.3 microns, using an optimized AR coating, maintaining the surface hole concentration of 3 x 10(exp 18)cm(sup -3), reducing the grid shadowing from actual 10.55 percent to 6 percent and reducing the contact resistance will increase the actual measured 12.57 percent AMO 25 C efficiency to about 20.1 percent. By using our state-of-the-art p(+)n structures which have a surface hole concentration of 4 x 10(exp 18)cm(sup -3) and slightly improving the front surface passivation, an even higher practically achievable AMO, 25 C efficiency of 21.3 percent is projected.
    Keywords: SPACECRAFT PROPULSION AND POWER
    Type: Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12); p 23-32
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  • 5
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    High resolution electrolyte for thinning InP by anodic dissolution and its applications to EC-V profiling, defect revealing and surface passivation (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: An extensive experimental study was conducted using various electrolytes in an effort to find an appropriate electrolyte for anodic dissolution of InP. From the analysis of electrochemical characteristics in the dark and under different illumination levels, x ray photoelectron spectroscopy and SEM/Nomarski inspection of the surfaces, it was determined that the anodic dissolution of InP front surface layers by FAP electrolyte is a very good choice for rendering smooth surfaces, free of oxides and contaminants and with good electrical characteristics. The FAP electrolyte, based on HF, CH3COOH, and H2O2 appears to be inherently superior to previously reported electrolytes for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/sq cm. It can also be used for accurate electrochemical revealing of either precipitates or dislocation density with application to EPD mapping as a function of depth, and for defect revealing of multilayer InP structures at any depth and/or at the interfaces.
    Keywords: INORGANIC AND PHYSICAL CHEMISTRY
    Type: Space Photovoltaic Research and Technology Conference; 12 p
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  • 6
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    Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells (1994)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13); p 149-158
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  • 7
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    Electrochemical characterization of InP structures (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-01-25
    Description: Electrochemical (EC) techniques represent a simple and yet accurate method to characterize InP and related materials structures. With EC techniques, uncertainties in the measurements arising from factors such as surface effects, the composition and thickness of a front dead layer, the contacts, etc., can be significantly reduced when both a suitable electrolyte is used and the measuring conditions are carefully selected. In this work, the use of photoelectrochemical techniques with InP structures is reported. The work focuses on both the characterization and the optimization of structures grown by thermal diffusion and by epitaxial methods. Characterization of the structures is done by studying the variation in the density of surface states, number of defects, and net majority carrier concentration as a function of material removed. A step-by-step optimization process of n(sup +)p and p(sup+)n InP structures is also described. This involves the passivation and subsequent removal of damaged layers in order to extract the performance parameters of solar cells fabricated with these structures.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Twelfth Space Photovoltaic Research and Technology Conference (SPRAT 12); p 8
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  • 8
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    Progress in p(+)n InP solar cells fabricated by thermal diffusion (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-01-25
    Description: In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Twelfth Space Photovoltaic Research and Technology Conference (SPRAT 12); p 7
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  • 9
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    Development of a quadrupole-based Secondary-Ion Mass Spectrometry (SIMS) system at Lewis Research Center (1990)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The design, construction, and initial use of an ion microprobe to carry out secondary ion mass spectrometry (SIMS) of solid samples is reported. The system is composed of a differentially pumped custom-made UHV (Ultra High Vacuum) chamber, a quadrupole mass spectrometer and a telefocus A-DIDA ion gun with the capability of producing beams of Cesium, as well as inert and reactive gases. The computer control and acquisition of the data were designed and implemented using a personal computer with plug-in boards, and external circuitry built as required to suit the system needs. The software is being developed by using a FORTH-like language. Initial tests aimed at characterizing the system, as well as preliminary surface and depth-profiling studies are presently underway.
    Keywords: CHEMISTRY AND MATERIALS (GENERAL)
    Type: NASA-TM-102531 , E-5341 , NAS 1.15:102531
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  • 10
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    The reuse of logistics carriers for the first lunar outpost alternative habitat study (1992)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The Systems Definition Branch deals with preliminary concepts/designs of various projects currently in progress at NASA. One of these projects is called the First Lunar Outpost. The First Lunar Outpost (FLO) is a proposed permanent lunar base to be located on the moon. In order to better understand the Lunar Habitat, a detailed analysis of the lunar environment as well as conceptual studies of the physical living arrangements for the support crew is necessary. The habitat will be inhabited for a period of 45 days followed by a six month dormant period. Requirements for the habitat include radiation protection, a safe haven for occasional solar flare storms, an airlock module and consumables to support a crew of 4 with a schedule of 34 extra vehicular activities. Consumables in order to sustain a crew of four for 45 days ranges from 430 kg of food to only 15 kg for personal hygiene items. These consumables must be brought to the moon with every mission. They are transported on logistics carriers. The logistics carrier must be pressurized in order to successfully transport the consumables. Refrigeration along with other types of thermal control and variation in pressure are defined by the list of necessary consumables. The objective of the proposed work was to collaborate the Habitat Team with their study on Logistic Carriers as possible alternatives for additional habitable volume. Options for possible reuses was also determined. From this analysis, a recommended design is proposed.
    Keywords: ENGINEERING (GENERAL)
    Type: NASA. Johnson Space Center, National Aeronautics and Space Administration (NASA)(American Society for Engineering Education (ASEE) Summer Faculty Fellowship Program, 1992, Volume 2 15 p (SEE N93-26070; NASA. Johnson Space
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