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  • National Academy of Sciences  (59)
  • American Institute of Physics (AIP)  (43)
  • 2015-2019  (54)
  • 2000-2004  (48)
  • 1
    Electronic Resource
    Electronic Resource
    Exchange anisotropy of epitaxial Fe/MnPd bilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2054-2057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropy contributions in epitaxial Fe/MnPd bilayers were analyzed in this study. It was found that due to ferromagnetic–antiferromagnetic interfacial exchange coupling, large uniaxial and cubic anisotropy contributions are also induced, in addition to the unidirectional anisotropy. These contributions play an essential role in the magnetization reversal process of the system, in which unusual reversal processes were found upon some fields orientations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305907
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  • 2
    Electronic Resource
    Electronic Resource
    Perpendicular anisotropy in the amorphous TbCo/Si multilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6845-6847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TbCo/Si multilayers prepared by the rf magnetron sputtering system with various Si thickness have been investigated. X-ray diffraction, magnetic measurement and Kerr rotation have been performed. No antiferromagnetic coupling was found for the system. With the thickness of Si layer tSi increasing, the perpendicular anisotropy constant Ku, and the saturation magnetization Ms decreased rapidly. It was assumed that Co2Si and Tb had been formed in the interfacial zone between TbCo and Si layers due to the interlayer diffusion. The decreasing of Ms is attributed to the decreasing of the effective thickness of magnetic layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372861
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  • 3
    Electronic Resource
    Electronic Resource
    Some features of chaos and oscillations in plasma-filled diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 3976-3982 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical background concerning the existence of four dynamical states (stable, oscillatory, chaotic and unstable) in a plasma-filled diode has been investigated in some detail, the results being presented with the help of charge density and other three-dimensional graphs. It has been established that the determining factor is a dynamic ions/electrons charge-balance in the interelectrode space. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289028
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  • 4
    Electronic Resource
    Electronic Resource
    Selective growth of (100)-, (110)-, and (111)-oriented MgO films on Si(100) by pulsed laser deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5728-5734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of singly oriented (110)-, (100)-, and (111)-MgO films on Si(100) substrates were obtained by pulsed laser deposition. The effects of deposition temperature, ambient oxygen pressure, and etching of the substrate on the structural properties of the films were studied. It is found that the crystalline orientations of the MgO films are determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition and etching of the Si substrates only effect the crystalline quality. Both (110)- and (111)-oriented films show granular grain structures. The (100)-oriented films grown on etched Si substrates display similar granular structures. Those deposited on nonetched Si substrates, however, reveal distinctive columnar grains. The observed phenomena are discussed based on the theory of crystal growth. The mechanism of the orientation selection is attributed to the energy balance between the surface and the interface energies. The varied grain structures are explained by considering the mobility of adatoms in different situations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461059
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  • 5
    Electronic Resource
    Electronic Resource
    Direct interband transitions in tris-(8-hydroxyquinoline) aluminum thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1082-1086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescent properties of three different device structures (A:ITO/SiO2/Alq3/SiO2/Al, B:ITO/Alq3/SiO2/Al, and C:ITO/SiO2/Alq3/Al) based on the tris-(8-hydroxyquinoline) aluminum (Alq3) were investigated. A blue electroluminescence at 457 nm was obtained from device (A) and (B), and the green emission at 518 nm was obtained from device (C). It is generally agreed that the green emission originates from the recombination of the singlet excitons. The blue emission, here, is attributed to the direct transitions between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital of Alq3. This is due to the electric field-induced excitons dissociation and the space charge accumulation at the interface. The high internal electric field enhances the dissociation of neutral singlet excitations into LUMO states and inhibits the formation of the singlet excitons, therefore enhances the probability for direct interband transitions of the relaxed carriers. The intensity of the blue emission is dependent on the operating frequency. This indicates that space charge accumulation time and effective internal electric field are responsible for the blue emission intensity. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334635
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  • 6
    Electronic Resource
    Electronic Resource
    A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4558-4562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100–450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287232
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of CaTiO3-modified Pb(Mg1/3Nb2/3)O3 dielectrics (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2516-2519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Mg1/3Nb2/3)O3 dielectrics modified by CaTiO3 were prepared by a solid-state reaction method, and microstructure analyses were performed together with the dielectric characterization. Solid solutions with cubic perovskite structures were obtained for compositions of 0–60 mol %CaTiO3, and the orthorhombic perovskite structures were observed for compositions near to the end member of CaTiO3 in the present system. The dielectric loss and temperature coefficient could be pronouncedly reduced by incorporating CaTiO3 into Pb(Mg1/3Nb2/3)O3. Low-loss dielectrics (tan δ∼10−4 at 1 MHz) with dielectric constants of 120–262 and small temperature coefficient (τε∼−960 to −1100 ppm/ °C) were obtained, and further improvement of dielectric properties could be expected through structural modifications. Good microwave dielectric properties, ε=172.6 and Qf=1930 GHz, were achieved in a composition of 0.4Pb(Mg1/3Nb2/3)O3/0.6CaTiO3, where the temperature coefficient of resonant frequency τf was estimated as 470 ppm/ °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372212
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  • 8
    Electronic Resource
    Electronic Resource
    Growth and optical characterization of Ga2O3 nanobelts and nanosheets (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1062-1064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monoclinic Ga2O3 nanobelts and nanosheets are obtained by a simple chemical route involved with H2O at 950 °C in Ar atmosphere. Electron microscopy observations reveal that the as-synthesized Ga2O3 nanobelts and nanosheets are structurally uniform, single crystalline, and most of them are free of defects and dislocations. The nanobelts are growing along with [001] facets, and the nanosheets are stacked up by (011) facets. The Raman scattering spectrum of Ga2O3 nanostructures shows a 30 cm−1 redshift at high wave numbers in comparison with that of bulk Ga2O3 powder. The photoluminescence spectrum reveals that there exists a stable blue emission band centered at 460 nm, which is mainly attributed to the oxygen vacancies in the Ga2O3 nanostructures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1483915
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  • 9
    Electronic Resource
    Electronic Resource
    Laser ablation of solid substrates in water and ambient air (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2400-2403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser ablation of solid substrates in ambient air and under water is investigated. It is found that the laser ablation rate is highly enhanced by the water film. A wide-band microphone is used to detect the audible acoustic wave generated during laser ablation. Peak-to-peak amplitude of the acoustic wave recorded in water confinement regime (WCR) is greater than that recorded in ambient. It is assumed that the plasma generated in WCR induces a much stronger pressure. This high-pressure, high-temperature plasma results in a much higher ablation rate. Theoretical calculation is also carried out to verify this assumption. By proper calibration, acoustic wave detection can be used as a real-time monitoring of the laser ablation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342200
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  • 10
    Electronic Resource
    Electronic Resource
    Low-frequency electrical noise of high-speed, high-performance 1.3 μm strained multiquantum well gain-coupled distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6746-6751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of low-frequency electrical noise (LFN) in an in-phase gain-coupled distributed feedback lasers with etched quantum-well active-layers emitting at 1.3 μm wavelength have been conducted. In particular, the injected current dependence of LFN is investigated over a wide range of injection current (from 10−2 μA to 60 mA). Pure 1/f noise spectra were observed in all measurements. The current dependence of the 1/f noise strongly correlates to the I–V characteristics. We find that noise from different mechanisms dominates when the lasers operate in different ranges of injection currents. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321778
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