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  • 2020-2022  (24)
  • 1995-1999  (319)
  • 1965-1969  (116)
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  • 1
    Monograph available for loan
    Monograph available for loan
    Cambridge [u.a.] : Cambridge Univ. Press
    Call number: M 98.0250
    Type of Medium: Monograph available for loan
    Pages: xi, 201 S.
    ISBN: 0521498279
    Classification:
    Petrophysics
    Language: English
    Location: Upper compact magazine
    Branch Library: GFZ Library
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  • 2
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 3
    Publication Date: 2021-05-19
    Description: The motions of eight Autonomous Lagrangian Circulation Explorer (ALACE) floats released near 750 m depth in Drake Passage and followed through the South Atlantic are described and compared with emulations made by advecting model floats through 12 monthly snapshots of velocity from the fine resolution Antarctic model (FRAM). Both ALACEs and FRAM reproduce the major features of the general circulation as follows: strong intermediate depth how in Drake Passage, bifurcation of the Antarctic Circumpolar Current (ACC) passing over the Falkland Plateau, a strong Falkland Current, its confluence with the Brazil Current, and moderate zonal flow across the South Atlantic. FRAM versus ALACE comparisons are made in both the Eulerian frame and using observed and modeled trajectories. In Drake Passage, where float velocities agree with earlier observations, FRAM velocities are about twice too big. Both FRAM and ALACE velocities are consistent with an O(100 Sv) Falkland Current. Tn the central South Atlantic the few available float observations indicate the ACC and South Atlantic Current (SAC) to be more localized than in the model. Eddy kinetic energy is much stronger in the observations than in FRAM. Float dispersion in both the model and observations is due primarily to mean shear. Initial RMS particle separation of 100 km grows to nearly 1000 km after 1 year, but most of this is associated with floats that take different paths of the general circulation. The observations indicate that eddy effects are particularly important near the Falldand-Brazil Current confluence in allowing Antarctic Intermediate Water to transfer from the ACC to the SAC, from which they may enter the subtropical gyre.
    Description: Published
    Repository Name: AquaDocs
    Type: Journal Contribution , Refereed
    Format: pp.855-884
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5046-5051 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of silicon into boron nitride films (BN:Si) has been achieved during ion beam assisted deposition growth. A gradual change from cubic boron nitride (c-BN) to hexagonal boron nitride (h-BN) was observed with increasing silicon concentration. Ultraviolet photoelectron spectroscopy, field emission, and field emission electron energy distribution experiments indicated that the observed electron transport and emission were due to hopping conduction between localized states in a band at the Fermi level for the undoped c-BN films and at the band tails of the valence band maximum for the BN:Si films. A negative electron affinity was observed for undoped c-BN films; this phenomenon disappeared upon silicon doping due to the transformation to h-BN. No shift of the Fermi level was observed in any BN:Si film; thus, n-type doping can be excluded. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1622-1624 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of optically active Be acceptors and has been assigned to band–acceptor (eA) recombinations. The determined ionization energy of 150±10 meV confirmed that isolated Be has the most shallow acceptor level in GaN. Co-implantation of nitrogen did not enhance the activation of the Be acceptors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2289-2291 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10–100 nA and required grid voltages ranging from 20–110 V. The grid currents were typically 1 to 104 times the collector currents. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2001-2003 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature reflectance data on epitaxial GaN thin-film samples covering the widest range of tensile and compressive stress (−3.8–3.5 kbar) thus far explicitly show the nonlinear behavior of the B–A and C–A splittings versus the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal-space analysis, allowing us to obtain band parameters such as ΔSO=17.0±1meV with increased confidence. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2873-2875 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal/AlN/n-type 6H–SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H–SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H–SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H–SiC surface. The interface is found to have a low density of trapped charges of 1×1011 cm−2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H–SiC(0001), and indicates the formation of a high quality interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3912-3914 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study reports UV-photoemission (UPS) measurements made on boron nitride crystals and thin films. The materials examined are commercial grade c-BN powder and thin films of BN deposited with ion beam assisted e-beam evaporation and laser ablation. The thin film samples examined exhibited varying amounts of sp3 (cubic) and sp2 (hexagonal, amorphous) bonding as determined by FTIR measurements. The UPS measurements displayed the spectral distribution of the low energy photoemitted electrons and the total energy width of the spectra. These characteristics can be related to the electron affinity. The measurements on several of the BN powder and thin film samples revealed features in the emission spectra which are indicative of a negative electron affinity (NEA) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7658-7663 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) was used to investigate the interfacial microstructure and the phases that developed during the nucleation and growth of oriented diamond on Ni by a hot filament process. Oriented Ni4C nuclei were identified by plan-view TEM in a sample quenched during the nucleation stage. Likewise, the presence of the Ni4C phase between the diamond and the Ni substrate was observed by cross-section TEM in samples grown for several hours. The orientational relationship among the diamond, Ni4C, and Ni substrate was examined by selected area diffraction. Diamond and Ni4C interfacial phase had a good epitaxial relationship, while the interfacial Ni4C phase and the Ni substrate developed with a small misfit and rotation. Based on these experimental results, the nucleation mechanism of oriented diamond growth on Ni is proposed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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