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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1990-1992 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD). A characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As impurity in the MOCVD grown GaN:As films. The arsenic incorporation efficiency as a function of experimental conditions and structure is presented. Temperature- and power-dependent cathodoluminescence measurements have been performed to help establish the nature of the As-related peak. © 1998 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2719-2726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-ceramic nanocomposite films consisting of either Ni or Co particles embedded in a MgO matrix were produced by two techniques involving the partial reduction of a mixed oxide solid solution. Transmission electron microscopy, Rutherford backscattering spectrometry, x-ray diffraction, and magneto-optical Faraday and Kerr rotation measurements were used to characterize the films. The metallic particles were well dispersed in the films, resistant to subsequent re-oxidation, with their size controlled by choice of processing conditions. The coercive field of the samples is influenced by the residual strain arising from the coefficient of thermal expansion difference between the film and the substrate upon which it is deposited. Large magneto-optical Faraday and Kerr rotations are achieved for relatively thick nanocomposite samples as compared to pure metallic films. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7285-7287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous ribbons of an alloy with the composition (Tb0.33Fe0.67)0.98B0.02, which exhibit good magnetostrictive properties at low magnetic fields, are bonded with a phenol-based binder to fabricate bulk composites. Efforts to determine optimum fabrication parameters are made by examining magnetic and mechanical properties of bulk compacts obtained at various fabrication conditions. From the binder content dependence of magnetostriction and compressive strength, the optimum binder content is estimated to be about 4.3 wt %, taking into account magnetostrictive and mechanical properties and the necessity of reducing nonmagnetic binder content. The two properties of magnetostriction and compressive strength vary nearly linearly with the compaction pressure; as the compaction pressure varies from 0.25 to 1.0 GPa, magnetostriction decreases but compressive strength increases, making it difficult to determine the optimum compaction pressure. A magnetostriction of 493 ppm (at 1.1 kOe) is achieved from the present bulk composites, together with a high dλ/dH (sensitivity of magnetostriction with applied magnetic field) of 1 ppm/Oe. © 1998 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 963-965 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum growth conditions were studied to obtain uniform InGaAs quantum dots constructed in an InGaP matrix. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W and a detectivity of 4.74×107 cm H1/2/W at 77 K. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2636-2638 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent photoluminescence excitation (PLE) spectroscopy has been carried out on the yellow band (YB) in GaN. The 5 K PLE spectra demonstrate that the exciting light must have photon energy large enough to generate free carriers or carriers localized on shallow impurities in order to excite the YB effectively. With increasing temperatures, progressively deeper energy levels can be thermally ionized, enabling extrinsic absorption by these deeper levels to generate the free holes required to excite the YB emission. The broad below-band gap PLE response then exhibits thermally activated onsets attributed to these free-to-bound transitions. One such onset corresponds to the well-known 205 meV acceptor, and a second onset provides conclusive evidence for the existence of a previously unconfirmed ∼120 meV impurity or defect level in GaN. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2630-2632 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN-rich side of GaNP and GaNAs layers is grown at 750 °C by gas-source molecular beam epitaxy. Phase separation is observed for the layers with P and As composition of over 1.5% and 1%, respectively. Photoluminescence (PL) spectra for the non-phase-separated GaNP (P composition: 0.37%) and GaNAs (As composition: 0.26%) show redshift of 50 and 40 meV, respectively, from that of GaN, and exhibit Stokes shift of about 80 meV which is smaller than that of GaN (100 meV). On the other hand, the PL spectrum for the phase-separated GaNP shows a large redshift peaking at 2.101 eV. This peak is considered to be an emission from the phase-separated GaP-rich GaPN region. PL excitation spectrum shows two large broad peaks. One at 2.982 eV corresponds to the absorption at the Γ point of GaP-rich region, and the other at 2.308 eV corresponds to the absorption at the isoelectronic band edge of GaP-rich GaPN alloy originated from the X point of GaP. In the case of phase-separated GaNAs, no PL is observed, suggesting that the optical properties are much more sensitive to crystalline quality in GaAs-rich GaAsN than in GaP-rich GaPN. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3664-3670 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scheme for generating complex, spatially separated patterns of multiple types of semiconducting and/or metallic nanocrystals is presented. The process is based on lithographic patterning of organic monolayers that contain a photolabile protection group and are covalently bound to SiO2 surfaces. The process results in spatially and chemically distinct interaction sites on a single substrate. Nanocrystal assembly occurs with a high selectivity on just one type of site. We report on the production of binary, tertiary, and quatemary patterns of nanocrystals. We highlight and discuss the differences between nanocrystal/substrate assembly and molecule/substrate assembly. Finally, we investigate the assembled structures using photoluminescence and absorption spectroscopy. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5005-5011 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure and Fe-doped Pb(Zr0.53Ti0.47)O3 (PZT) thin film capacitors were fabricated by the sol–gel method and the leakage current versus voltage characteristics of these films were investigated at several temperatures and initial polarization states. After the initial poling of ferroelectric thin films, we measured two kinds of leakage current: (i) the full-switching current measured against an initial polarization direction and (ii) the nonswitching current measured toward an initial polarization direction. In the case of the full-switching current measurement, the anomaly of leakage current due to the switching of space charges was observed, which we suggest to be accumulated at a Schottky barrier region near an electrode or a gain boundary. In the case of the nonswitching current measurement, the Schottky diode rectifier current and the field-enhanced Schottky (ES) emission current came out without the switching current. The Poole–Frenkel emission process was dominant over ES emission for a Fe-doped PZT thin film having a large amount of space charge and traps. The height of the Schottky barrier in a Au/PZT film/Pt capacitor was measured to be 0.64 eV. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 9574-9582 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The chemisorption site of the simplest prototypical model alkanethiol compound, methanethiol [CH3SH], on a Pt{111} surface in the temperature range 298–1073 K has been investigated by means of time-of-flight scattering and recoiling spectrometry (TOF-SARS) and low-energy electron diffraction (LEED). TOF-SARS spectra of the scattered and recoiled ions plus fast neutrals were collected as a function of crystal azimuthal rotation angle δ and beam incident angle α using 4 keV Ar+ primary ions. At room temperature, the adsorption of methanethiol produces a partially disordered overlayer that gives rise to a diffuse (3×3)R30° LEED pattern and three-fold symmetry in the scattering profiles. Heating this surface layer results in the sequential dehydrogenation of the methanethiol and the formation of S–C species at elevated temperatures. By ∼373 K, hydrogen is absent from the TOF-SARS spectra and a sharp (3×3)R30° LEED pattern is observed. The model developed from the scattering data is consistent with the preservation of the adsorption site at elevated temperatures, but a change in the S–C bond angle with respect to the surface plane. For the fully dehydrogenated species, the S atoms reside ∼1.6±0.2 Å above the surface in face-centered-cubic (fcc) three-fold sites and the C atoms reside ∼1.5±0.4 Å in hexagonal-close-packed (hcp) three-fold sites. It is proposed that the remarkable stability of this SC adsorbate results from bonding of both the S and C atoms to the surrounding Pt atoms, i.e., a Pt-stabilized SC moiety. © 1998 American Institute of Physics.
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