ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A significant charge transfer, which differs from tunneling, over thick AlxGa1−xAs barrier in GaAs/AlxGa1−xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-A(ring)-thick Al0.3Ga0.7As barrier is universally "leaky'' with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117724
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